AOSMD AO4622

AO4622
20V Dual P + N-Channel MOSFET
General Description
Product Summary
The AO4622 uses advanced trench technology
MOSFETs to provide excellent RDS(ON) and low gate
charge. The complementary MOSFETs may be used
to form a level shifted high side switch, and for a
host of other applications.
N-Channel
P-Channel
VDS (V) = 20V
-20V
-5A (VGS=-4.5V)
ID = 7.3A (VGS=4.5V)
RDS(ON)
RDS(ON)
< 23mΩ (VGS=10V)
< 53mΩ (VGS = -4.5V)
< 87mΩ (VGS = -2.5V)
< 30mΩ (VGS=4.5V)
< 84mΩ (VGS=2.5V)
100% UIS Tested
100% Rg Tested
100% UIS Tested
100% Rg Tested
SOIC-8
Top View
D1
D2
Bottom View
Top View
S1
G1
S2
G2
D1
D1
D2
D2
G1
G2
S1
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Max n-channel
Drain-Source Voltage
VDS
20
Gate-Source Voltage
VGS
Pulsed Drain Current
TA=70°C
B
TA=25°C
Power Dissipation
TA=70°C
±12
7.3
-5
ID
6.2
-4.2
IDM
35
-25
2
2
1.44
1.44
PD
p-channel
Max p-channel
-20
±16
TA=25°C
Continuous Drain
Current AF
S2
n-channel
Pin1
Units
V
V
A
W
Avalanche Current B
IAR
13
13
A
Repetitive avalanche energy 0.3mH B
EAR
25
25
mJ
Junction and Storage Temperature Range
TJ, TSTG
-55 to 150
-55 to 150
°C
Thermal Characteristics: n-channel and p-channel
Parameter
t ≤ 10s
Maximum Junction-to-Ambient A
Steady-State
Maximum Junction-to-Ambient A
Steady-State
Maximum Junction-to-Lead C
t ≤ 10s
Maximum Junction-to-Ambient A
Steady-State
Maximum Junction-to-Ambient A
Steady-State
Maximum Junction-to-Lead C
Alpha & Omega Semiconductor, Ltd.
Symbol
RθJA
RθJL
RθJA
RθJL
Device
n-ch
n-ch
n-ch
Typ
48
74
35
Max
62.5
110
40
Units
°C/W
°C/W
°C/W
p-ch
p-ch
p-ch
48
74
35
62.5
110
40
°C/W
°C/W
°C/W
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AO4622
N-Channel Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
Conditions
Min
ID=250µA, VGS=0V
20
1
5
Gate-Body leakage current
VDS=0V, VGS=±16V
Gate Threshold Voltage
VDS=VGS ID=250µA
0.6
ID(ON)
On state drain current
VGS=4.5V, VDS=5V
35
100
nA
2
V
19
23
28
33.6
VGS=4.5V, ID=6.4A
24
30
mΩ
VGS=2.5V, ID=2A
67
84
mΩ
TJ=125°C
A
gFS
Forward Transconductance
VDS=5V, ID=7.3A
17
VSD
Diode Forward Voltage
IS=1A
0.7
IS
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
uA
1.25
VGS=10V, ID=7.3A
Coss
Units
V
TJ=55°C
IGSS
Static Drain-Source On-Resistance
Max
VDS=16V, VGS=0V
VGS(th)
RDS(ON)
Typ
S
900
VGS=0V, VDS=10V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
mΩ
1
V
3
A
1100
pF
162
pF
105
pF
Ω
0.9
1.35
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
15
18
nC
Qg(4.5V) Total Gate Charge
7.2
9
nC
VGS=10V, VDS=10V, ID=6.5A
Qgs
Gate Source Charge
1.8
nC
Qgd
tD(on)
Gate Drain Charge
2.8
nC
Turn-On DelayTime
4.5
ns
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
trr
Turn-Off Fall Time
IF=7.3A, dI/dt=100A/µs
Qrr
Body Diode Reverse Recovery Charge IF=7.3A, dI/dt=100A/µs
9.5
Body Diode Reverse Recovery Time
VGS=10V, VDS=10V, RL=1.4Ω,
RGEN=3Ω
9.2
ns
18.7
ns
3.3
ns
18
ns
nC
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The value
in any given application depends on the user's specific board design.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. RθJL and RθJC are equivalent terms referring to
thermal resistance from junction to drain lead.
D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
2
E. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA
curve provides a single pulse rating.
F. The current rating is based on the t ≤ 10s thermal resistance rating.
Rev5: Nov 2010
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AO4622
N-CHANNEL TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
60
30
6V
10V
4.5V
50
125°C
-40°C
20
3.5V
30
ID(A)
ID (A)
40
25°C
VDS=5V
25
20
15
1.4
10
494
692
VGS=3V
10
5
593
830
0
0
1
2
3
4
0
5
1
VDS (Volts)
Figure 1: On-Region Characteristics
5
193
18
VGS=10V, 7.3A
Normalized On-Resistance
90
1.40
80
RDS(ON) (mΩ )
3
4
VGS(Volts)
Figure 2: Transfer Characteristics
1.60
100
70
VGS=2.5V
60
VGS=4.5V, 6.4A
1.20
50
40
1.00
VGS=4.5V
30
20
VGS=2.5V, 5.5A
0.80
10
VGS=10V
0
0.60
0
5
10
15
20
25
30
-50
40
-25
0
25
50
59
75
100
125
150
175
142 (°C)
Temperature
Figure 4: On-Resistance vs. Junction
Temperature
ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
1.E+02
1.E+01
ID=7.3A
35
1.E+00
125°C
IS (A)
30
RDS(ON) (mΩ )
2
1.E-01
125°C
25
-40°C
1.E-02
20
25°C
1.E-03
25°C
15
1.E-04
10
1.E-05
3
4
5
6
7
8
9
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
10
0.0
0.2
0.4
0.6
0.8
1.0
VSD (Volts)
Figure 6: Body-Diode Characteristics
1.2
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AO4622
N-Channel TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
1400
1200
VDS=10V
ID=7.3A
Ciss
1000
Capacitance (pF)
VGS (Volts)
8
6
4
800
1.4
600
Coss
400
494
692
2
593
830
200
Crss
0
0
0
3
6 Qg (nC) 9
12
Figure 7: Gate-Charge Characteristics
0
15
5
10
15
VDS (Volts)
Figure 8: Capacitance Characteristics
20
193
18
100.0
50
10µs
1ms
100µ
40
10ms
RDS(ON)
limited
1.0
Power (W)
ID (Amps)
10.0
1
0.1s
10s
0.1
20
DC
TJ(Max)=150°C
TA=25°C
10
0.0
0.1
1
10
0
0.0001
100
0.01
0.1
1
10
100
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
VDS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
10
Zθ JA Normalized Transient
Thermal Resistance
TJ(Max)=150°C
TA=25°C
30
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=62.5°C/W
0.001
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
PD
0.1
Ton
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
T
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
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AO4622
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
DUT
-
Vgs
Ig
Charge
R esistive S w itchin g T e st C ircu it & W avefo rm s
RL
Vds
V ds
DUT
V gs
90%
+ V dd
VD C
-
Rg
1 0%
V gs
V gs
t d(on)
tr
t d (o ff)
t on
tf
t off
D iode R ecovery Test C ircuit & W aveform s
Q rr = -
Vds +
Idt
DUT
Vgs
V ds Isd
Vgs
Ig
Alpha & Omega Semiconductor, Ltd.
L
Isd
+ Vdd
t rr
dI/dt
I RM
V dd
VD C
-
IF
Vds
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AO4622
P-Channel Electrical Characteristics (TJ=25°C unless otherwise noted)
Parameter
Symbol
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
Conditions
Min
ID=-250µA, VGS=0V
-20
IGSS
Gate-Body leakage current
VDS=0V, VGS=±12V
VGS(th)
Gate Threshold Voltage
VDS=VGS ID=-250µA
-1.3
ID(ON)
On state drain current
VGS=-4.5V, VDS=-5V
-25
TJ=55°C
VGS=-4.5V, ID=-5A
TJ=125°C
VGS=-2.5V, ID=-4.2A
gFS
Forward Transconductance
VDS=-5V, ID=-5A
VSD
Diode Forward Voltage
IS=-1A,VGS=0V
IS
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
Units
-1
Zero Gate Voltage Drain Current
Static Drain-Source On-Resistance
Max
V
VDS=-16V, VGS=0V
IDSS
RDS(ON)
Typ
-5
±100
nA
-0.9
-0.5
V
44
53
59
71
67
87
mΩ
-1
V
-2.5
A
960
pF
A
13
-0.76
800
VGS=0V, VDS=-10V, f=1MHz
131
6.7
mΩ
S
pF
103
VGS=0V, VDS=0V, f=1MHz
µA
pF
10
Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge (10V)
15.5
nC
Qg(4.5V)
Total Gate Charge (4.5V)
7.4
nC
Qgs
Gate Source Charge
1.3
nC
Qgd
Gate Drain Charge
2.9
nC
4.4
ns
VGS=-4.5V, VDS=-10V, ID=-4.5A
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
trr
Turn-Off Fall Time
IF=-5A, dI/dt=100A/µs
Qrr
Body Diode Reverse Recovery Charge IF=-5A, dI/dt=100A/µs
9
Body Diode Reverse Recovery Time
VGS=-4.5V, VDS=-10V, RL=2Ω,
RGEN=3Ω
7.6
ns
44
ns
13.5
ns
20
ns
nC
A: The value of R θJA
is measured with the device mounted on 1in 22 FR-4 board with 2oz. Copper, in a still air environment with T AA =25°C. The value
θJA
in
any
given
application
depends
on the user's
board design.
value in any a given application
depends
on thespecific
user's specific
board design. The current rating is based on the t ≤ 10s thermal resistance
B: Repetitive rating, pulse width limited by junction temperature.
rating.
C. Repetitive
The R θJA israting,
the sum
of the
thermal
junction to lead R θJL and lead to ambient. RθJL and RθJC are equivalent terms referring to
B:
pulse
width
limitedimpedence
by junctionfrom
temperature.
thermal
from of
junction
to drain
lead.
C.
The Rresistance
the thermal
impedence
from junction to lead R θJL and lead to ambient.
θJA is the sum
6 are obtained
using <300
dutyduty
cycle
0.5%
max.
D. The static characteristics in Figures 1 to 6,12,14
are obtained
usingµs
80pulses,
µs pulses,
cycle
0.5%
max.
2
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T AA=25°C. The SOA
curve provides a single pulse rating.
F. The current rating is based on the t ≤ 10s thermal resistance rating.
Rev5: Nov 2010
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AO4622
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: P-CHANNEL
20
25
-10V
-3.5V
20
15
-4.5V
VDS=-5V
15
-ID(A)
-ID (A)
-6V
VGS=-2.5V
10
25°C
10
5
5
-40°C
125°C
0
0
0
1
2
3
4
5
0.5
1.0
80
2.0
2.5
3.0
Normalized On-Resistance
1.6
70
VGS=-2.5V
RDS(ON) (mΩ )
1.5
-VGS(Volts)
Figure 2: Transfer Characteristics
-VDS (Volts)
Fig 1: On-Region Characteristics
60
50
VGS=-4.5V
40
1.4
VGS=-2.5V
ID=-5A
1.2
VGS=-4.5V
ID=-4.2A
1
0.8
0.6
30
0
5
10
15
20
-50
25
-25
0
25
50
75
100
125
150
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
-ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
80
1.0E+02
ID=-5A
1.0E+01
1.0E+00
125°C
1.0E-01
-IS (A)
RDS(ON) (mΩ )
60
125°C
1.0E-02
1.0E-03
40
25°C
1.0E-04
25°C
-40°C
1.0E-05
1.0E-06
20
0
2
4
6
8
10
-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
0.0
0.2
0.4
0.6
0.8
1.0
-VSD (Volts)
Figure 6: Body-Diode Characteristics
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AO4622
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: P-CHANNEL
1250
10
1000
VDS=-10V
ID=-5A
Capacitance (pF)
-VGS (Volts)
8
6
4
2
750
500
Coss
250
0
Crss
0
0
4
8
12
16
0
-Qg (nC)
Figure 7: Gate-Charge Characteristics
5
10
15
20
-VDS (Volts)
Figure 8: Capacitance Characteristics
100
60
TJ(Max)=150°C
TA=25°C
50
10µs
10
1ms 100µ
10ms
RDS(ON)
limited
1
Power (W)
ID (Amps)
Ciss
0.1s
10s
0
DC
30
20
1s
TJ(Max)=150°C
TA=25°C
10
0
0.1
40
1
10
100
VDS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
0
0.0001 0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
Zθ JA Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=62.5°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
PD
0.1
Ton
T
Single Pulse
0.01
0.00001
0.0001
0.001
0.1
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
0.01
100
1000
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AO4622
Gate Charge Test Circuit & Waveform
Vgs
Qg
-10V
-
-
VDC
Qgd
+
+
DUT
Qgs
Vds
VDC
Vgs
Ig
Charge
Resistive Switching Test Circuit & W aveform s
RL
Vds
t off
t on
td(on)
Vgs
-
D UT
Vgs
t d(off)
tr
90%
Vdd
VDC
tf
+
Rg
Vgs
10%
Vds
Diode Recovery Test Circuit & W aveform s
Q rr = - Idt
Vds +
D UT
Vgs
Vds -
Isd
L
Vgs
Ig
Alpha & Omega Semiconductor, Ltd.
-Isd
+ Vdd
t rr
dI/dt
-I R M
Vdd
VD C
-
-I F
-Vds
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