AON3806 20V Dual N-Channel MOSFET General Description Product Summary VDS The AON3806 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V while retaining a 12V VGS(MAX) rating. It is ESD protected. This device is suitable for use as a uni-directional or bi-directional load switch, facilitated by its commondrain configuration. 20V 6A ID (at VGS=4.5V) RDS(ON) (at VGS=4.5V) < 22mΩ RDS(ON) (at VGS =4.0V) < 24mΩ RDS(ON) (at VGS =2.5V) < 33mΩ Typical ESD protection HBM Class 2 DFN 3x3 Top View D1 Bottom View D2 Top View S2 1 8 D2 G2 S1 G1 2 7 3 6 4 5 D2 D1 D1 G1 G2 S1 Pin 1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current G VGS TA=25°C Pulsed Drain Current C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead Rev 7: Dec. 2011 Steady-State Steady-State V A 2.5 W 1.6 TJ, TSTG Symbol t ≤ 10s ±12 24 PD TA=70°C Units V 4.7 IDM TA=25°C Power Dissipation B Maximum 20 6 ID TA=70°C S2 RθJA RθJL www.aosmd.com -55 to 150 Typ 40 75 30 °C Max 50 95 40 Units °C/W °C/W °C/W Page 1 of 5 AON3806 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS Conditions Min ID=250µA, VGS=0V Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS=±10V VGS(th) Gate Threshold Voltage VDS=VGS，ID=250µA ID(ON) On state drain current VGS=4.5V, VDS=5V TJ=55°C ±10 µA 0.85 1.1 V 13.5 17.5 22 20.5 26 33 24 A 14 18 24 VGS=2.5V, ID=4A 19 24 33 mΩ mΩ 1 V 3.5 A gFS Forward Transconductance VDS=5V, ID=6A 25 Diode Forward Voltage IS=1A,VGS=0V 0.65 IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=10V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime mΩ VGS=4.0V, ID=5A VSD Coss µA 5 0.5 TJ=125°C Units V 1 VGS=4.5V, ID=6A Static Drain-Source On-Resistance Max 20 VDS=20V, VGS=0V IDSS RDS(ON) Typ 500 pF 100 pF 52 pF 2.6 kΩ 6 VGS=4.5V, VDS=10V, ID=6A VGS=5V, VDS=10V, RL=1.67Ω, RGEN=3Ω S 9 nC 2 nC 1 nC 0.2 us 1.5 us 7.4 us tf Turn-Off Fall Time 18 us trr Body Diode Reverse Recovery Time IF=6A, dI/dt=100A/µs 9 Qrr Body Diode Reverse Recovery Charge IF=6A, dI/dt=100A/µs 10 ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RθJA is the sum of the thermal impedance from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-ambient thermal impedance which is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. G. The maximum current rating is package limited. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 7: April. 2012 www.aosmd.com Page 2 of 5 AON3806 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 20 4.5V 2.5V VDS=5V 4V 15 ID(A) ID (A) 20 2V 10 125°C 10 25°C 5 VGS=1.5V 0 0 0 1 2 3 4 0 5 40 1 1.5 2 2.5 3 1.8 Normalized On-Resistance 35 VGS=2.5V 30 RDS(ON) (mΩ Ω) 0.5 VGS(Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Fig 1: On-Region Characteristics (Note E) 25 VGS=4.0V 20 15 VGS=4.5V 10 5 VGS=2.5V ID=4A 1.6 1.4 17 VGS=4.5V 5 ID=6A 1.2 2 10 VGS=4.0V ID=5A 1 0.8 0 0 0 5 10 15 20 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 25 50 75 100 125 150 175 0 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 18 (Note E) 60 1.0E+01 ID=6A 1.0E+00 50 40 125°C 40 IS (A) RDS(ON) (mΩ Ω) 1.0E-01 125°C 1.0E-02 30 25°C 1.0E-03 20 1.0E-04 25°C 1.0E-05 10 0 4 6 8 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev 7: April. 2012 2 10 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 5 AON3806 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 5 800 VDS=10V ID=6A 4 Ciss Capacitance (pF) VGS (Volts) 600 3 2 400 Coss 200 1 0 Crss 0 0 2 4 6 Qg (nC) Figure 7: Gate-Charge Characteristics 8 0 5 10 15 VDS (Volts) Figure 8: Capacitance Characteristics 20 10000 100.0 TA=25°C 10µs RDS(ON) limited 1000 100µs 1ms 10ms 1.0 TJ(Max)=150°C TA=25°C 0.1 Power (W) ID (Amps) 10.0 100 10 10s DC 1 0.0 1E-05 0.01 0.1 1 VDS (Volts) 10 0.001 0.1 10 1000 100 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) Zθ JA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJA=95°C/W 0.1 PD 0.01 Single Pulse Ton T 0.001 1E-05 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev 7: April. 2012 www.aosmd.com Page 4 of 5 AON3806 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC DUT - Vgs Ig Charge R es istiv e S w itch ing T e st C ircu it & W a ve fo rm s RL V ds Vds DUT Vgs 90 % + Vdd VDC - Rg 1 0% Vgs V gs t d (o n ) tr t d (o ff) to n tf t o ff D iode R ecovery T est C ircuit & W aveform s Q rr = - V ds + Idt DUT V gs V ds - Isd V gs Ig Rev 7: April. 2012 L Isd + VD C - IF t rr dI/dt I RM V dd V dd V ds www.aosmd.com Page 5 of 5