AON2406 20V N-Channel MOSFET General Description Product Summary The AON2406 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for load switch and battery protection applications. ID (at VGS=4.5V) VDS 20V 8A RDS(ON) (at VGS=4.5V) < 12.5mΩ RDS(ON) (at VGS=2.5V) < 15mΩ RDS(ON) (at VGS=1.8V) < 19mΩ RDS(ON) (at VGS=1.5V) < 24mΩ DFN 2x2B Top View S D Bottom View D D D S Pin 1 D G Pin 1 D G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current G VGS TA=25°C Pulsed Drain Current C Power Dissipation A Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Rev 0 : March. 2012 Steady-State A 32 W 1.8 -55 to 150 TJ, TSTG Symbol t ≤ 10s V 2.8 PD TA=70°C ±8 6 IDM TA=25°C Units V 8 ID TA=70°C Maximum 20 RθJA www.aosmd.com Typ 37 66 °C Max 45 80 Units °C/W °C/W Page 1 of 5 AON2406 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS Conditions Min ID=250µA, VGS=0V IGSS Gate-Body leakage current VDS=0V, VGS=±8V VGS(th) Gate Threshold Voltage VDS=VGS,ID=250µA 0.4 ID(ON) On state drain current VGS=4.5V, VDS=5V 32 TJ=55°C VGS=4.5V, ID=8A TJ=125°C ±100 nA 0.67 1.0 V 10 12.5 13.5 17 A 11.5 15 mΩ VGS=1.8V, ID=4A 14 19 mΩ 24 mΩ VGS=1.5V, ID=1A 17 50 VSD Diode Forward Voltage IS=1A,VGS=0V 0.6 IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=10V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge mΩ VGS=2.5V, ID=6A VDS=5V, ID=8A Coss µA 5 Forward Transconductance gFS Units V 1 Zero Gate Voltage Drain Current Static Drain-Source On-Resistance Max 20 VDS=20V, VGS=0V IDSS RDS(ON) Typ 1 V 4.5 A 1140 pF 165 pF 110 pF 2.2 Ω 12.5 VGS=4.5V, VDS=10V, ID=8A S 18 nC 1.2 nC Qgd Gate Drain Charge 2.7 nC tD(on) Turn-On DelayTime 2.7 ns tr Turn-On Rise Time 3 ns tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time Qrr VGS=4.5V, VDS=10V, RL=1.25Ω, RGEN=3Ω 37 ns 7 ns IF=8A, dI/dt=100A/µs 11 Body Diode Reverse Recovery Charge IF=8A, dI/dt=100A/µs 3 ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA t ≤ 10s value and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. G. The maximum current rating is package limited. H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 0 : March. 2012 www.aosmd.com Page 2 of 5 AON2406 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 50 4.5V 15 3.5V 2.5V VDS=5V 1.8V 40 12 30 9 ID(A) ID (A) 125°C 20 6 VGS=1.5V 25°C 10 3 0 0 0 1 2 3 4 0 5 20 1 1.5 2 1.6 Normalized On-Resistance VGS=1.5V 18 VGS=1.8V 16 RDS(ON) (mΩ Ω) 0.5 VGS(Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Fig 1: On-Region Characteristics (Note E) 14 VGS=2.5V 12 10 VGS=4.5V 8 1.4 VGS=4.5V ID=8A 17 1.2 5 VGS=1.5V ID=1A 2 1 VGS=2.5V ID=6A VGS=1.8V ID=4A 10 0.8 6 0 3 0 6 9 12 15 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 25 50 75 100 125 150 175 0 Temperature (°C) Figure 4: On-Resistance vs. Junction 18Temperature (Note E) 25 1.0E+02 ID=8A 1.0E+01 20 40 IS (A) RDS(ON) (mΩ Ω) 15 10 125°C 1.0E+00 125°C 1.0E-01 1.0E-02 25°C 1.0E-03 25°C 5 1.0E-04 1.0E-05 0 0 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev 0 : March. 2012 2 4 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 5 AON2406 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 5 1800 VDS=10V ID=8A 1600 1400 Capacitance (pF) VGS (Volts) 4 3 2 Ciss 1200 1000 800 600 Coss 400 1 200 0 0 3 6 9 12 Qg (nC) Figure 7: Gate-Charge Characteristics 15 0 10µs 10µs 100µs RDS(ON) limited 20 1ms 1.0 10ms TJ(Max)=150°C TA=25°C 0.1 TJ(Max)=150°C TA=25°C 160 Power (W) 10.0 5 10 15 VDS (Volts) Figure 8: Capacitance Characteristics 200 100.0 ID (Amps) Crss 0 DC 17 5 2 10 120 80 40 0.0 0 0.01 0.1 1 VDS (Volts) 10 100 0.0001 0.001 0.01 0.1 1 10 0 Pulse Width (s) 18 Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) Zθ JC Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 40 RθJA=80°C/W 0.1 PD 0.01 Ton Single Pulse T 0.001 1E-05 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev 0 : March. 2012 www.aosmd.com Page 4 of 5 AON2406 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds 90% + Vdd DUT Vgs VDC - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 E AR = 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds Isd Vgs Ig Rev 0 : March. 2012 Vgs L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com Page 5 of 5