AOSMD AOD422

AOD422
20V N-Channel MOSFET
General Description
Product Summary
The AOD422 uses advanced trench technology to provide
excellent RDS(ON), low gate charge and operation with gate
voltages as low as 1.8V. This device is suitable for use as
a load switch or in PWM applications. It is ESD
protected.
VDS
20V
20A
ID (at VGS=4.5V)
RDS(ON) (at VGS=4.5V)
< 25mΩ
RDS(ON) (at VGS =2.5V)
< 28mΩ
RDS(ON) (at VGS =1.8V)
< 34mΩ
ESD protected
100% UIS Tested
TO252
DPAK
Top View
D
Bottom View
D
D
G
S
G
S
S
G
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC=25°C
Continuous Drain
Current G
Pulsed Drain Current
Continuous Drain
Current
C
V
A
90
8
IDSM
TA=70°C
±8
16
IDM
TA=25°C
Units
V
20
ID
TC=100°C
Maximum
20
A
6.5
Avalanche Current C
IAS, IAR
15
A
Avalanche energy L=0.1mH C
TC=25°C
EAS, EAR
11
mJ
Power Dissipation B
TA=25°C
Power Dissipation A
Junction and Storage Temperature Range
Rev 5: July 2010
2.5
Steady-State
Steady-State
RθJA
RθJC
W
1.6
-55 to 175
TJ, TSTG
Symbol
t ≤ 10s
W
18
PDSM
TA=70°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
37
PD
TC=100°C
Typ
16.7
40
3
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°C
Max
25
50
4
Units
°C/W
°C/W
°C/W
Page 1 of 5
AOD422
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
Drain-Source Breakdown Voltage
BVDSS
Conditions
Min
ID=250µA, VGS=0V
IGSS
Gate-Body leakage current
VGS(th)
Gate Threshold Voltage
VDS=VGS ID=250µA
0.4
ID(ON)
On state drain current
VGS=4.5V, VDS=5V
45
Units
V
1
Zero Gate Voltage Drain Current
TJ=55°C
5
µA
VDS=0V, VGS= ±4.5V
±1
uA
VDS=0V, VGS= ±8V
±10
uA
0.7
1.1
V
16
25
22
31
VGS=4.5V, ID=10A
Static Drain-Source On-Resistance
Max
20
VDS=20V, VGS=0V
IDSS
RDS(ON)
Typ
TJ=125°C
A
mΩ
VGS=2.5V, ID=8A
18
28
mΩ
VGS=1.8V, ID=5A
21
34
mΩ
Forward Transconductance
VDS=5V, ID=10A
55
VSD
Diode Forward Voltage
IS=1A,VGS=0V
IS
Maximum Body-Diode Continuous Current
gFS
DYNAMIC PARAMETERS
Input Capacitance
Ciss
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
VGS=0V, VDS=10V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg
Total Gate Charge
Qgs
Gate Source Charge
VGS=4.5V, VDS=10V, ID=10A
0.62
S
1
V
20
A
pF
1035
1295
1650
110
160
210
pF
50
87
125
pF
0.9
1.8
2.7
ΚΩ
10
nC
4.2
nC
Qgd
Gate Drain Charge
2.6
nC
tD(on)
Turn-On DelayTime
280
ns
tr
Turn-On Rise Time
328
ns
tD(off)
Turn-Off DelayTime
3.76
us
tf
Turn-Off Fall Time
2.24
us
ns
nC
VGS=10V, VDS=10V, RL=1Ω,
RGEN=3Ω
trr
Body Diode Reverse Recovery Time
IF=10A, dI/dt=500A/µs, VGS=-9V
25
Qrr
Body Diode Reverse Recovery Charge IF=10A, dI/dt=500A/µs, VGS=-9V
75
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends
on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep initial
TJ =25°C.
D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 5: July 2010
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Page 2 of 5
AOD422
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
30
25
4.5V
VDS=5V
2.5V
25
1.8V
20
3.1V
20
ID(A)
ID (A)
15
15
10
VGS=1.5V
10
125°C
5
5
25°C
0
0
0
0.5
1
1.5
2
2.5
0
3
30
1
1.5
2
2.5
Normalized On-Resistance
1.6
25
RDS(ON) (mΩ
Ω)
0.5
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
VGS=1.8V
20
VGS=2.5V
15
VGS=4.5V
VGS=2.5V
ID=8A
1.4
VGS=1.8V
ID=5A
17
5
2
10
=4.5V
1.2
VGS
ID=10A
1
0.8
10
0
0
5
10
15
20
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
25
50
75
100
125
150
175
0
Temperature (°C)
Figure 4: On-Resistance vs. Junction
18Temperature
(Note E)
60
1.0E+01
ID=10A
1.0E+00
40
1.0E-01
40
IS (A)
RDS(ON) (mΩ
Ω)
50
30
125°C
1.0E-02
25°C
125°C
1.0E-03
20
1.0E-04
25°C
10
1.0E-05
0
4
6
8
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev 5: July 2010
2
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0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Page 3 of 5
AOD422
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
5
1800
VDS=10V
ID=10A
1600
Ciss
1400
Capacitance (pF)
VGS (Volts)
4
3
2
1200
1000
800
600
Coss
400
1
200
0
Crss
0
0
2
4
6
8
10
Qg (nC)
Figure 7: Gate-Charge Characteristics
12
0
5
10
15
VDS (Volts)
Figure 8: Capacitance Characteristics
20
10000
1000.0
10µs
100.0
TJ(Max)=175°C
TA=25°C
10µs
1000
RDS(ON)
10.0
Power (W)
ID (Amps)
100µs
1ms
10ms
DC
1.0
TJ(Max)=175°C
TC=25°C
0.1
100
10
1
0.0
0.01
0.1
1
10
0.00001
100
0.001
0.1
10
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note H)
VDS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
Zθ JA Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJA=50°C/W
0.1
PD
0.01
Single Pulse
Ton
T
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note H)
Rev 5: July 2010
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Page 4 of 5
AOD422
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
+ Vdd
DUT
Vgs
VDC
-
Rg
10%
Vgs
Vgs
t d(on)
tr
t d(off)
t on
tf
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
2
E AR = 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vds Isd
Vgs
Ig
Rev 5: July 2010
Vgs
L
Isd
+ Vdd
t rr
dI/dt
I RM
Vdd
VDC
-
IF
Vds
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Page 5 of 5