AOSMD AON6908A

AON6908A
30V Dual Asymmetric N-Channel MOSFET
General Description
Product Summary
The AON6908A is designed to provide a high efficiency
synchronous buck power stage with optimal layout and
board space utilization. It includes two specialized
MOSFETs in a dual Power DFN5x6 package. The Q1 "High
Side" MOSFET is desgined to minimze switching losses.
The Q2 "Low Side" MOSFET is an SRFET™ that features
low RDS(ON) to reduce conduction losses as well as an
integrated Schottky diode with low QRR and Vf to reduce
switching losses. The AON6908A is well suited for use in
compact DC/DC converter applications.
Q1
30V
Q2
30V
ID (at VGS=10V)
46A
80A
RDS(ON) (at VGS=10V)
<8.9mΩ
<3.6mΩ
RDS(ON) (at VGS = 4.5V)
<12.5mΩ
<4.5mΩ
VDS
100% UIS Tested
100% Rg Tested
DFN5X6
Top View
Bottom View
PIN1
Bottom
View
Bottom
View
Top View
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Max Q1
VDS
Drain-Source Voltage
Gate-Source Voltage
VGS
TC=25°C
Continuous Drain
CurrentG
Pulsed Drain Current
Continuous Drain
Current
Max Q2
Units
V
±20
±12
V
46
80
28
62
100
200
ID
TC=100°C
C
IDM
TA=25°C
IDSM
TA=70°C
30
11.5
17
9
13.5
A
A
Avalanche Current C
IAS, IAR
27
40
A
Avalanche Energy L=0.1mH C
EAS, EAR
36
80
mJ
VDS Spike
VSPIKE
V
100ns
TC=25°C
Power Dissipation B
TC=100°C
Power Dissipation A
TA=70°C
PDSM
Junction and Storage Temperature Range
Rev0 : Sep 2010
36
78
12
31
1.9
2.1
1.2
1.3
PD
TA=25°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
36
31
TJ, TSTG
Symbol
t ≤ 10s
Steady-State
Steady-State
RθJA
RθJC
-55 to 150
Typ Q1
29
56
3.3
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Typ Q2
24
50
1.2
Max Q1 Max Q2
35
29
67
60
4
1.6
W
W
°C
Units
°C/W
°C/W
°C/W
Page 1 of 11
AON6908A
Q1 Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
Drain-Source Breakdown Voltage
BVDSS
IDSS
Zero Gate Voltage Drain Current
Conditions
Min
ID=250µA, VGS=0V
Max
30
1
TJ=55°C
5
IGSS
Gate-Body leakage current
VDS=0V, VGS= ±20V
Gate Threshold Voltage
VDS=VGS ID=250µA
1.3
ID(ON)
On state drain current
VGS=10V, VDS=5V
100
Units
V
VDS=30V, VGS=0V
VGS(th)
µA
100
nA
1.8
2.4
V
7.4
8.9
11.1
13.4
VGS=4.5V, ID=11.5A
10
12.5
VGS=10V, ID=11.5A
RDS(ON)
Typ
Static Drain-Source On-Resistance
TJ=125°C
A
gFS
Forward Transconductance
VDS=5V, ID=11.5A
50
VSD
Diode Forward Voltage
IS=1A,VGS=0V
0.7
IS
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Input Capacitance
Ciss
mΩ
mΩ
S
1
V
34
A
680
850
1110
pF
VGS=0V, VDS=15V, f=1MHz
260
380
540
pF
18
30
51
pF
VGS=0V, VDS=0V, f=1MHz
0.7
1.4
2.1
Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
10
12.5
15
nC
Qg(4.5V) Total Gate Charge
4.6
5.7
6.9
nC
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
VGS=10V, VDS=15V, ID=11.5A
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
1.6
2
2.4
nC
1.5
2.6
3.6
nC
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
trr
Body Diode Reverse Recovery Time
IF=11.5A, dI/dt=500A/µs
8
10.5
13
Qrr
Body Diode Reverse Recovery Charge IF=11.5A, dI/dt=500A/µs
13
17.2
21
5
VGS=10V, VDS=15V, RL=0.75Ω,
RGEN=3Ω
ns
9.5
ns
18.5
ns
4
ns
ns
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on RθJA and the maximum allowed junction temperature of 150°C. The value in any given application depends
on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initial TJ =25°C.
D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink,
assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse ratin g.
G. The maximum current rating is limited by package.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 0 : Sep 2010
www.aosmd.com
Page 2 of 11
AON6908A
Q1-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
80
10V
6V
5V
VDS=5V
4.5V
80
7V
60
4V
ID(A)
ID (A)
60
3.5V
40
40
125°C
20
VGS=3V
20
25°C
0
0
0
1
2
3
4
5
0
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
1
1.5
2
2.5
3
3.5
4
4.5
5
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
14
Normalized On-Resistance
1.8
12
VGS=4.5V
RDS(ON) (mΩ )
0.5
10
8
6
VGS=10V
VGS=10V
ID=11.5A
1.6
1.4
17
VGS=4.5V
5
ID=11.5A
2
1.2
10
1
4
0
5
10
15
20
25
0.8
30
0
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
50
75
100
125
150
175
0
Temperature (°C)
18
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
25
1.0E+02
ID=11.5A
1.0E+01
40
20
1.0E+00
125°C
1.0E-01
IS (A)
RDS(ON) (mΩ )
25
15
125°C
25°C
1.0E-02
1.0E-03
10
1.0E-04
25°C
1.0E-05
5
2
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev 0 : Sep 2010
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0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Page 3 of 11
AON6908A
Q1-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
1400
VDS=15V
ID=11.5A
1200
Ciss
Capacitance (pF)
VGS (Volts)
8
6
4
1000
800
600
Coss
400
2
200
0
0
0
2
4
6
8
10
12
Qg (nC)
Figure 7: Gate-Charge Characteristics
14
0
5
10
15
20
25
VDS (Volts)
Figure 8: Capacitance Characteristics
30
200
1000.0
160
100.0
10.0
100us
1ms
1.0
DC
120
TJ(Max)=150°C
TC=25°C
0.1
0.1
1
VDS (Volts)
80
40
0.0
0.01
TJ(Max)=150°C
TC=25°C
10µs
RDS(ON)
limited
Power (W)
ID (Amps)
Crss
10
0
0.0001
100
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toCase (Note F)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
Zθ JC Normalized Transient
Thermal Resistance
10
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=4°C/W
1
0.1
PD
Ton
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
T
0.1
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev 0 : Sep 2010
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Page 4 of 11
AON6908A
Q1-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
IAR (A) Peak Avalanche Current
100.0
35
Power Dissipation (W)
30
TA=100°C
TA=25°C
TA=125°C
TA=150°C
25
20
15
10
5
0
10.0
0
0.000001
0.00001
0.0001
0.001
Time in avalanche, tA (s)
Figure 12: Single Pulse Avalanche capability (Note
C)
50
75
100
125
TCASE (°C)
Figure 13: Power De-rating (Note F)
150
10000
50
TA=25°C
40
1000
Power (W)
Current rating ID(A)
25
30
20
17
5
2
10
100
10
10
0
1
0
25
50
75
100
125
0.00001
150
TCASE (°C)
Figure 14: Current De-rating (Note F)
0.001
0.1
10
0
1000
Pulse Width (s)
18
Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H)
Zθ JA Normalized Transient
Thermal Resistance
10
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1
40
RθJA=67°C/W
0.1
PD
0.01
Ton
Single Pulse
T
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Rev 0 : Sep 2010
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Page 5 of 11
AON6908A
Q2 Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
Conditions
Min
ID=10mA, VGS=0V
TJ=55°C
100
Gate-Body leakage current
VDS=0V, VGS= ±12V
Gate Threshold Voltage
VDS=VGS ID=250µA
1
ID(ON)
On state drain current
VGS=10V, VDS=5V
200
100
nA
2
V
2.9
3.6
4.3
5.2
VGS=4.5V, ID=20A
3.3
4.5
mΩ
0.7
V
80
A
Static Drain-Source On-Resistance
TJ=125°C
A
gFS
Forward Transconductance
VDS=5V, ID=20A
115
VSD
Diode Forward Voltage
IS=1A,VGS=0V
0.4
IS
Maximum Body-Diode Continuous CurrentG
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
VGS=0V, VDS=15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg(4.5V) Total Gate Charge
Qgs
Gate Source Charge
mA
1.5
VGS=10V, ID=20A
Output Capacitance
Units
V
0.5
IGSS
Coss
Max
30
VDS=30V, VGS=0V
VGS(th)
RDS(ON)
Typ
mΩ
S
3500
4380
5260
pF
340
490
640
pF
160
280
400
pF
0.3
0.7
1.1
Ω
31
38
24
VGS=10V, VDS=15V, ID=20A
nC
11
nC
Qgd
Gate Drain Charge
9
nC
tD(on)
Turn-On DelayTime
10
ns
6
ns
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
trr
Body Diode Reverse Recovery Time
IF=20A, dI/dt=500A/µs
9
12
15
Qrr
Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs
17
22
27
VGS=10V, VDS=15V, RL=0.75Ω,
RGEN=3Ω
50
ns
7
ns
ns
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends
on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initial TJ =25°C.
D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink,
assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse ratin g.
G. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 0 : Sep 2010
www.aosmd.com
Page 6 of 11
AON6908A
Q2-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
150
100
10V
4.5V
VDS=5V
3V
120
80
7V
60
ID (A)
ID(A)
90
125°C
40
60
20
30
25°C
VGS=2.5V
0
0
0
1
2
3
4
1
5
5
Normalized On-Resistance
VGS=4.5V
RDS(ON) (mΩ )
2
2.5
3
2
4
3
VGS=10V
2
1
0
1.8
VGS=4.5V
ID=20A
1.6
17
5
2
10
1.4
VGS=10V
ID=20A
1.2
1
0.8
0
5
10
15
20
25
30
ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage (Note E)
0
25
50
75
100
125
150
175
200
0
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
18
(Note E)
10
1.0E+02
ID=20A
1.0E+01
8
125°C
1.0E+0040
6
125°C
IS (A)
RDS(ON) (mΩ )
1.5
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
4
1.0E-01
25°C
1.0E-02
1.0E-03
2
25°C
1.0E-04
0
1.0E-05
2
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev 0 : Sep 2010
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0.0
0.2
0.4
0.6
0.8
1.0
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Page 7 of 11
AON6908A
Q2-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
6000
VDS=15V
ID=20A
5000
Capacitance (pF)
VGS (Volts)
8
6
4
2
4000
3000
2000
Coss
1000
0
Crss
0
0
20
40
60
Qg (nC)
Figure 7: Gate-Charge Characteristics
80
0
5
10
15
20
25
VDS (Volts)
Figure 8: Capacitance Characteristics
30
200
1000.0
10µs
RDS(ON)
limited
160
10.0
100µs
DC
1ms
10ms
1.0
TJ(Max)=150°C
TC=25°C
0.1
0.1
120
80
17
5
2
10
40
0.0
0.01
TJ(Max)=150°C
TC=25°C
10µs
Power (W)
100.0
ID (Amps)
Ciss
1
VDS (Volts)
10
100
0
0.0001
0.001
0.01
0.1
1
0
10
Pulse Width (s)
18
Figure 10: Single Pulse Power Rating Junction-toCase (Note F)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
Zθ JC Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
RθJC=1.6°C/W
0.1
PD
Ton
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
T
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev 0 : Sep 2010
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Page 8 of 11
AON6908A
Q2-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
TA=25°C
Power Dissipation (W)
IAR (A) Peak Avalanche Current
1000
TA=100°C
100
TA=150°C
10
TA=125°C
80
60
40
20
1
0
1
10
100
1000
Time in avalanche, tA (µ
µs)
Figure 12: Single Pulse Avalanche capability
(Note C)
0
100
10000
80
1000
25
50
75
100
125
TCASE (°C)
Figure 13: Power De-rating (Note F)
150
Power (W)
Current rating ID(A)
TA=25°C
60
40
17
5
2
10
100
10
20
1
0.00001
0.001
0.1
10
1000
0
0
25
50
75
100
125
TCASE (°C)
Figure 14: Current De-rating (Note F)
0
150
Pulse Width (s)
18
Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H)
Zθ JA Normalized Transient
Thermal Resistance
10
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1
40
RθJA=60°C/W
0.1
PD
0.01
Single Pulse
Ton
0.001
0.00001
0.0001
0.001
0.01
0.1
1
T
10
100
1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Rev 0 : Sep 2010
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Page 9 of 11
AON6908A
Q2-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1.0E-01
0.7
20A
10A
5A
0.6
1.0E-02
0.5
IR (A)
VSD (V)
VDS=30V
1.0E-03
0.4
0.3
IS=1A
VDS=15V
0.2
1.0E-04
0.1
0
1.0E-05
100
150
200
Temperature (°C)
Figure 17: Diode Reverse Leakage Current vs.
Junction Temperature
40
50
100
150
200
Temperature (°C)
Figure 18: Diode Forward voltage vs. Junction
Temperature
14
12
3
di/dt=800A/µs
125ºC
12
10
25
25ºC
Qrr
6
20
trr (ns)
8
Irm (A)
125ºC
30
trr
4
Irm
1.5
6
125ºC
1
S
2
0
2
0
5
10
15
20
25
0
0
30
5
10
15
20
20
4
Is=20A
18
25
15
10
125ºC
5
5
Irm
trr (ns)
10
Irm (A)
25ºC
Qrr
trr
15
20
15
0
200
400
600
800
1000
di/dt (A/µ
µs)
Figure 20: Diode Reverse Recovery Charge and Peak
Current vs. di/dt
Rev 0 : Sep 2010
3
2.5
12
125ºC
2
9
S
6
1.5
25ºC
1
0.5
125º
25ºC
0
3.5
25ºC
3
0
30
21
Is=20A
125ºC
25
IS (A)
Figure 19: Diode Reverse Recovery Time and
Softness Factor vs. Conduction Current
IS (A)
Figure 18: Diode Reverse Recovery Charge and Peak
Current vs. Conduction Current
30
0.5
25ºC
25ºC
10
2
25ºC
8
4
125ºC
15
Qrr (nC)
2.5
10
S
di/dt=800A/µs
35
Qrr (nC)
0
50
S
0
0
0
0
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200
400
600
800
1000
di/dt (A/µ
µs)
Figure 21: Diode Reverse Recovery Time and
Softness Factor vs. di/dt
Page 10 of 11
AON6908A
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
+ Vdd
DUT
Vgs
VDC
-
Rg
10%
Vgs
Vgs
t d(on)
tr
t d(off)
t on
tf
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
2
E AR = 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vds Isd
Vgs
Ig
Rev 0 : Sep 2010
Vgs
L
Isd
+ Vdd
t rr
dI/dt
I RM
Vdd
VDC
-
IF
Vds
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