SHENZHENFREESCALE AON7902

AON7902
30V Dual Asymmetric N-Channel MOSFET
General Description
The AON7902 is designed to provide a high efficienc y synchronous buck power stage with optimal layout an d
board space utilization. It includes two specializ ed MOSFETs in a dual Power DFN3.3x3.3A package. The Q1
"High Side" MOSFET is designed to minimize switchin g losses. The Q2 "Low Side" MOSFET use advance trenc h
technology with a monolithically integrated Schotty to provide excellent R DS(ON) and low gate charge. The
AON7902 is well suited for use in compact DC/DC converter applications.
Product Summary
VDS
Q1
30V
Q2
30V
ID (at VGS=10V)
27A
40A
RDS(ON) (at VGS=10V)
<21mΩ
<6.2mΩ
RDS(ON) (at VGS = 4.5V)
<28mΩ
<7.4mΩ
Bottom View
Top View
100% UIS Tested
100% Rg Tested
G2
S2
8
1
7
2
G1
D2/S1
6
3
5
4
S2
S2
Absolute Maximum Ratings TA=25°C unless otherwise noted
Symbol
Parameter
VDS
Drain-Source Voltage
Gate-Source Voltage
VGS
TC=25°C
Continuous Drain
Current G
Pulsed Drain Current C
IDSM
TA=70°C
Units
V
±12
V
24
40
15
31
90
150
8
13
6
10
IAS, IAR
22
36
A
EAS, EAR
24
65
mJ
17
50
7
20
1.8
1.8
1.1
1.1
Power Dissipation
PD
TC=100°C
TA=25°C
Power Dissipation A
PDSM
TA=70°C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
TJ, TSTG
Symbol
t ≤ 10s
Steady-State
Steady-State
RθJA
RθJC
-55 to 150
Typ Q1
27
60
6
Typ Q2
27
60
2
Max Q1 Max Q2
35
35
72
72
7.5
2.5
D1
A
Avalanche Energy L=0.1mH C
B
D1
A
Avalanche Current C
TC=25°C
1/11
±20
IDM
TA=25°C
Max Q2
30
ID
TC=100°C
Continuous Drain
Current
Max Q1
D1
W
W
°C
Units
°C/W
°C/W
°C/W
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AON7902
Q1 Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
Min
Conditions
ID=250µA, VGS=0V
Max
30
1
Zero Gate Voltage Drain Current
IGSS
Gate-Body leakage current
VDS=0V, VGS= ±20V
VGS(th)
Gate Threshold Voltage
VDS=VGS ID=250µA
1.3
ID(ON)
On state drain current
VGS=10V, VDS=5V
90
Units
V
VDS=30V, VGS=0V
IDSS
TJ=55°C
5
µA
100
nA
1.8
2.3
V
17
21
24
29
VGS=4.5V, ID=4A
22
28
VGS=10V, ID=8A
RDS(ON)
Typ
Static Drain-Source On-Resistance
TJ=125°C
A
mΩ
mΩ
gFS
Forward Transconductance
VDS=5V, ID=8A
33
S
VSD
Diode Forward Voltage
IS=1A,VGS=0V
0.7
V
IS
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Input Capacitance
Ciss
20
A
470
590
710
pF
VGS=0V, VDS=15V, f=1MHz
250
360
470
pF
13
23
40
pF
VGS=0V, VDS=0V, f=1MHz
0.7
1.5
2.3
Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
7
9
11.0
nC
Qg(4.5V) Total Gate Charge
3
4
5.0
nC
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
VGS=10V, VDS=15V, ID=8A
VGS=10V, VDS=15V, RL=1.8Ω,
RGEN=3Ω
1.5
nC
1.5
nC
6
ns
3
ns
18
ns
tf
Turn-Off Fall Time
trr
Body Diode Reverse Recovery Time
IF=8A, dI/dt=500A/µs
8
11
3
14
ns
Qrr
Body Diode Reverse Recovery Charge IF=8A, dI/dt=500A/µs
15
19
23
ns
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on RθJA and the maximum allowed junction temperature of 150°C. The value in any given application depends
on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initial TJ =25°C.
D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink,
assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse ratin g.
G. The maximum current rating is limited by package.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
2/11
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AON7902
Q1-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
80
30
10V
VDS=5V
7V
25
4.5V
60
ID(A)
ID (A)
20
40
3.5V
15
125°C
10
20
25°C
5
VGS=2.5V
0
0
0
1
2
3
4
5
0
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
1
1.5
2
2.5
3
3.5
4
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
1.8
25
Normalized On-Resistance
30
RDS(ON) (mΩ )
0.5
VGS=4.5V
20
15
VGS=10V
10
VGS=10V
ID=8A
1.6
1.4
17
VGS=4.5V
5
ID=4A 2
1.2
10
1
0.8
0
3
6
9
12
15
0
25
50
75
100
125
150
175
200
0
Temperature (°C)
18
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
40
1.0E+02
ID=8A
1.0E+01
35
40
1.0E+00
125°C
1.0E-01
IS (A)
RDS(ON) (mΩ )
30
25
125°C
1.0E-03
15
1.0E-04
25°C
1.0E-05
10
2
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
3/11
25°C
1.0E-02
20
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
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AON7902
Q1-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1200
10
VDS=15V
ID=8A
1000
Capacitance (pF)
VGS (Volts)
8
6
4
800
600
Coss
400
2
200
Crss
0
0
0
2
4
6
8
Qg (nC)
Figure 7: Gate-Charge Characteristics
0
10
5
10
15
20
25
VDS (Volts)
Figure 8: Capacitance Characteristics
30
200
1000.0
160
100.0
RDS(ON)
limited
10.0
100us
1ms
1.0
DC
120
TJ(Max)=150°C
TC=25°C
0.1
0.1
1
VDS (Volts)
80
40
0.0
0.01
TJ(Max)=150°C
TC=25°C
10µs
Power (W)
ID (Amps)
Ciss
10
0
0.0001
100
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toCase (Note F)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
Zθ JC Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJC=7.5°C/W
1
PD
0.1
Ton
T
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
4/11
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AON7902
Q1-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
20
Power Dissipation (W)
IAR (A) Peak Avalanche Current
100.0
TA=25°C
TA=100°C
TA=125°C
TA=150°C
15
10
5
0
10.0
0
0.000001
0.00001
0.0001
0.001
Time in avalanche, tA (s)
Figure 12: Single Pulse Avalanche capability (Note
C)
25
50
75
100
125
TCASE (°C)
Figure 13: Power De-rating (Note F)
10000
30
TA=25°C
25
1000
20
Power (W)
Current rating ID(A)
150
15
17
5
2
10
100
10
10
5
0
1
0
25
50
75
100
125
150
0.00001
TCASE (°C)
Figure 14: Current De-rating (Note F)
0.001
0.1
10
1000
0
Pulse Width (s)
18
Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H)
Zθ JA Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
RθJA=72°C/W
0.1
PD
0.01
Ton
Single Pulse
T
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
5/11
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AON7902
Q2 Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
Drain-Source Breakdown Voltage
BVDSS
Conditions
Min
ID=10mA, VGS=0V
IGSS
Gate-Body leakage current
VDS=0V, VGS= ±12V
VGS(th)
Gate Threshold Voltage
VDS=VGS ID=250µA
1.1
ID(ON)
On state drain current
VGS=10V, VDS=5V
150
TJ=55°C
500
100
nA
2.1
V
5.1
6.2
7.4
9
VGS=4.5V, ID=10A
5.7
7.4
mΩ
0.7
V
40
A
Static Drain-Source On-Resistance
TJ=125°C
A
gFS
Forward Transconductance
VDS=5V, ID=13A
50
VSD
Diode Forward Voltage
IS=1A,VGS=0V
0.4
IS
Maximum Body-Diode Continuous CurrentG
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
mA
1.6
VGS=10V, ID=13A
Output Capacitance
Units
V
0.5
Zero Gate Voltage Drain Current
Coss
Max
30
VDS=30V, VGS=0V
IDSS
RDS(ON)
Typ
VGS=0V, VDS=15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg(4.5V) Total Gate Charge
mΩ
S
2800
3500
4200
pF
360
520
680
pF
150
260
450
pF
0.6
1.2
1.8
Ω
22
28
34
VGS=10V, VDS=15V, ID=13A
Qgs
Gate Source Charge
Qgd
tD(on)
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
trr
Body Diode Reverse Recovery Time
IF=13A, dI/dt=500A/µs
10
13
16
Qrr
Body Diode Reverse Recovery Charge IF=13A, dI/dt=500A/µs
16
21
26
nC
9
nC
Gate Drain Charge
11
nC
Turn-On DelayTime
8
ns
5
ns
VGS=10V, VDS=15V, RL=1.2Ω,
RGEN=3Ω
50
ns
8
ns
ns
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends
on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initial TJ =25°C.
D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink,
assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse ratin g.
G. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
6/11
www.freescale.net.cn
AON7902
Q2-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
100
10V
VDS=5V
4.5V
80
80
3V
60
ID(A)
ID (A)
60
125°C
25°C
40
40
2.5V
20
20
0
0
0
1
2
3
4
0
5
1
10
3
4
Normalized On-Resistance
2
8
RDS(ON) (mΩ )
2
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
VGS=4.5V
6
4
VGS=10V
VGS=10V
ID=13A
1.8
1.6
17
5
2
10
1.4
VGS=4.5V
ID=10A
1.2
1
2
0.8
0
5
10
15
20
ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage (Note E)
14
0
25
50
75
100
125
150
175
200
0
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
18
(Note E)
1.0E+02
ID=13A
12
125°C
1.0E+01
125°C
8
25°C
1.0E-01
6
1.0E-02
4
25°C
1.0E-03
2
2
7/11
1.0E+00
IS (A)
RDS(ON) (mΩ )
40
10
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
0.0
0.2
0.4
0.6
0.8
1.0
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
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AON7902
Q2-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
5000
10
VDS=15V
ID=13A
4000
Capacitance (pF)
VGS (Volts)
8
6
4
3000
2000
Crss
1000
2
Coss
0
0
0
10
20
30
40
50
60
Qg (nC)
Figure 7: Gate-Charge Characteristics
0
70
5
10
15
20
25
VDS (Volts)
Figure 8: Capacitance Characteristics
30
200
1000.0
10µs
RDS(ON)
limited
10.0
1ms
DC
1.0
160
TJ(Max)=150°C
TC=25°C
0.1
0.1
1
VDS (Volts)
120
80
40
0.0
0.01
TJ(Max)=150°C
TC=25°C
100µs
Power (W)
100.0
ID (Amps)
Ciss
10
0
0.0001
100
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toCase (Note F)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
Zθ JC Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJC=2.5°C/W
40
1
PD
0.1
Single Pulse
0.01
0.00001
0.0001
Ton
0.001
0.01
T
0.1
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
8/11
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AON7902
Q2-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
60
TA=25°C
TA=100°C
Power Dissipation (W)
IAR (A) Peak Avalanche Current
1000
TA=125°C
100
TA=150°C
40
30
20
10
0
10
0
0.000001
0.00001
0.0001
0.001
Time in avalanche, tA (s)
Figure 12: Single Pulse Avalanche capability (Note
C)
25
75
100
125
TCASE (°C)
Figure 13: Power De-rating (Note F)
50
10000
40
1000
50
150
TA=25°C
Power (W)
Current rating ID(A)
50
30
20
17
5
2
10
100
10
10
1
0.00001
0
0
25
50
75
100
125
TCASE (°C)
Figure 14: Current De-rating (Note F)
0.001
0.1
10
1000
0
18
150
Pulse Width (s)
Figure 15: Single Pulse Power Rating Junction-toAmbient (Note G)
Zθ JA Normalized Transient
Thermal Resistance
10
1
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJA=72°C/W
40
0.1
PD
0.01
Single Pulse
0.001
0.0001
0.001
0.01
Ton
0.1
1
T
10
100
1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note G)
9/11
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AON7902
Q2-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1.0E-01
0.7
20A
10A
5A
0.6
1.0E-02
0.5
IR (A)
VSD (V)
VDS=30V
1.0E-03
0.4
0.3
VDS=15V
IS=1A
0.2
1.0E-04
0.1
0
100
150
200
Temperature (°C)
Figure 17: Diode Reverse Leakage Current vs.
Junction Temperature
30
di/dt=800A/µs
3
di/dt=800A/µs
125ºC
12
10
2.5
trr
25ºC
20
Qrr
6
trr (ns)
8
Irm (A)
10
25ºC
4
Irm
25ºC
10
0
5
10
15
2
8
20
1
S
0
0
15
125ºC
5
5
Irm
trr (ns)
10
25
30
Is=20A
25ºC
3.5
3
15
Irm (A)
10
20
4
25ºC
Qrr
15
trr
18
15
10
21
125ºC
20
5
IS (A)
Figure 19: Diode Reverse Recovery Time and
Softness Factor vs. Conduction Current
20
Is=20A
0.5
0
30
IS (A)
Figure 18: Diode Reverse Recovery Charge and Peak
Current vs. Conduction Current
25
25ºC
2
2
25
1.5
125ºC
6
4
125ºC
15
Qrr (nC)
50
100
150
200
Temperature (°C)
Figure 18: Diode Forward voltage vs. Junction
Temperature
14
12
125ºC
25
Qrr (nC)
0
50
2.5
125ºC
12
2
9
25ºC
1.5
S
6
1
3
125ºC
0.5
25ºC
0
0
0
400
600
800
1000
di/dt (A/µ
µs)
Figure 20: Diode Reverse Recovery Charge and Peak
Current vs. di/dt
10/11
200
S
0
S
1.0E-05
0
0
0
200
400
600
800
1000
di/dt (A/µ
µs)
Figure 21: Diode Reverse Recovery Time and
Softness Factor vs. di/dt
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AON7902
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
+ Vdd
DUT
Vgs
VDC
-
Rg
10%
Vgs
Vgs
t d(on)
tr
t d(off)
t on
tf
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
2
E AR = 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vds Isd
Vgs
Ig
11/11
Vgs
L
Isd
+ Vdd
t rr
dI/dt
I RM
Vdd
VDC
-
IF
Vds
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