AT-41435 Up to 6 GHz Low Noise Silicon Bipolar Transistor Data Sheet Description Features Avago’s AT-41435 is a general purpose NPN bipolar transistor that offers excellent high frequency performance. The AT‑41435 is housed in a cost effective surface mount 100 mil micro-X package. The 4 micron emitter-to-emitter pitch enables this transistor to be used in many different functions. The 14 emitter finger interdigitated geometry yields an intermediate sized transistor with impedances that are easy to match for low noise and moderate power applications. This device is designed for use in low noise, wideband amplifier, mixer and oscillator applications in the VHF, UHF, and microwave frequencies. An optimum noise match near 50Ω at 1 GHz, makes this device easy to use as a low noise amplifier. • Low Noise Figure: 1.7 dB Typical at 2.0 GHz 3.0 dB Typical at 4.0 GHz The AT-41435 bipolar transistor is fabricated using Avago’s 10 GHz fT Self-Aligned-Transistor (SAT) process. The die is nitride passivated for surface protection. Excellent device uniformity, performance and reliability are produced by the use of ion-implantation, self-alignment techniques, and gold metalization in the fabrication of this device. • High Associated Gain: 14.0 dB Typical at 2.0 GHz 10.0 dB Typical at 4.0 GHz • High Gain-Bandwidth Product: 8.0 GHz Typical fT • Cost Effective Ceramic Microstrip Package 35 micro-X Package AT-41435 Absolute Maximum Ratings Symbol Parameter Units VEBO Emitter-Base Voltage V 1.5 VCBO Collector-Base Voltage V 20 VCEO Collector-Emitter Voltage V 12 IC Collector Current mA 60 PT Power Dissipation[2,3] mW 500 Tj Junction Temperature °C 150 TSTG Storage Temperature[4] °C -65 to 150 Thermal Resistance [2,5]: θjc = 200°C/W Absolute Maximum[1] Notes: 1. Permanent damage may occur if any of these limits are exceeded. 2. Tcase = 25°C. 3. Derate at 5 mW/°C for Tc > 100°C. 4. Storage above +150°C may tarnish the leads of this package making it difficult to solder into a circuit. 5. The small spot size of this technique results in a higher, though more accurate determination of θjc than do alternate methods. See MEASUREMENTS section “Thermal Resistance” for more information. Electrical Specifications, TA = 25°C Symbol Parameters and Test Conditions |S 21E| 2 Min. Typ. Insertion Power Gain; VCE = 8 V, IC = 25 mA f = 2.0 GHz dB f = 4.0 GHz 11.5 6.0 P1 dB f = 2.0 GHz dBm f = 4.0 GHz 19.0 18.5 G1 dB 1 dB Compressed Gain; VCE = 8 V, IC = 25 mA f = 2.0 GHz dB f = 4.0 GHz 14.0 9.5 NFO Optimum Noise Figure: VCE = 8 V, IC = 10 mA f = 1.0 GHz dB f = 2.0 GHz f = 4.0 GHz 1.3 1.7 3.0 GA Gain @ NFO; VCE = 8 V, IC = 10 mA f = 1.0 GHz dB f = 2.0 GHz 13.0 f = 4.0 GHz 18.5 14.0 10.0 Power Output @ 1 dB Gain Compression VCE = 8 V, IC = 25 mA GHz Max. 2.0 8.0 f T Gain Bandwidth Product: VCE = 8 V, IC = 25 mA hFE Forward Current Transfer Ratio; VCE = 8 V, IC = 10 mA — ICBO Collector Cutoff Current; VCB = 8 V µA 0.2 IEBO Emitter Cutoff Current; VEB = 1 V µA 1.0 CCB Collector Base Capacitance[1]: VCB = 8 V, f = 1 MHz pF Note: 1. For this test, the emitter is grounded. Units 30 150 0.2 270 AT-41435 Typical Performance, TA = 25°C GA 15 20 2.0 GHz 4.0 GHz 16 12 P1dB 8 6 6 4 NF50 3 NFO 0 0.5 1.0 2.0 2 2.0 GHz 0 3.0 4.0 5.0 8 G1dB 0 10 20 30 40 0 4 20 30 40 2 0 IC (mA) Figure 4. Optimum Noise Figure and Associated Gain vs. Collector Current and Frequency. VCE = 8 V. NFO (dB) 4.0 GHz 6 10 40 16 MSG 25 20 MAG 15 |S21E|2 10 1.0 GHz 12 2.0 GHz 8 4.0 GHz 4 5 0 0.1 0.3 0.5 2 1 Figure 3. Optimum Noise Figure and Associated Gain vs. Collector Current and Collector Voltage. f = 2.0 GHz. |S21E|2 GAIN (dB) 4.0 GHz 0 30 35 GA 2.0 GHz 20 20 30 NFO 10 3 IC (mA) 40 2.0 GHz GAIN (dB) GAIN (dB) 4V 6V 10 V 4.0 GHz Figure 2. Output Power and 1 dB Compressed Gain vs. Collector Current and Frequency. VCE = 8 V. 8 12 IC (mA) 16 10 GA 13 NFO 4 Figure 1. Noise Figure and Associated Gain vs. Frequency. VCE = 8 V, IC = 10�mA. 12 10 V 6V 4V 14 4 FREQUENCY (GHz) 14 15 12 NF (dB) 9 G1 dB (dB) GAIN (dB) 18 1.0 3.0 6.0 FREQUENCY (GHz) Figure 5. Insertion Power Gain, Maximum Available Gain and Maximum Stable Gain vs. Frequency. VCE = 8 V, IC = 25 mA. 0 0 10 20 30 40 IC (mA) Figure 6. Insertion Power Gain vs. Collector Current and Frequency. VCE = 8 V. NFO (dB) 21 16 GAIN (dB) 24 P1 dB (dBm) 24 AT-41435 Typical Scattering Parameters, Common Emitter, ZO = 50 Ω,TA = 25°C, VCE = 8 V, IC = 25 mA Freq. S11 S21 GHz Mag. Ang. dB Mag. Ang. dB S12 S22 Mag. Ang. Mag. Ang. .010 .027 .044 .067 .083 .105 .122 .144 .165 .185 .207 .233 .257 0.1 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 .63 .39 .36 .36 .38 .40 .43 .45 .46 .46 .47 .51 .58 -50 -137 -171 171 156 149 140 132 122 112 101 89 79 31.8 22.9 17.2 13.9 11.5 9.8 8.3 7.2 6.1 5.2 4.4 3.7 3.0 39.08 13.97 7.28 4.94 3.76 3.08 2.61 2.28 2.02 1.82 1.66 1.54 1.41 146 99 80 68 58 52 43 33 23 14 4 -5 -15 -40.0 -31.4 -27.1 -23.5 -21.6 -19.6 -18.3 -16.8 -15.6 -14.6 -13.7 -12.6 -11.8 83 60 67 66 63 63 64 59 55 50 45 39 33 .84 .50 .45 .43 .41 .39 .38 .39 .40 .42 .43 .42 .37 -18 -26 -26 -30 -34 -38 -47 -57 -67 -75 -81 -89 -101 A model for this device is available in the DEVICE MODELS section. AT-41435 Typical Scattering Parameters, Common Emitter, ZO = 50 Ω,TA = 25°C, VCE = 8 V, IC = 10 mA Freq. S11 S21 GHz Mag. Ang. dB Mag. Ang. dB S12 S22 Mag. Ang. Mag. Ang. .011 .033 .049 .063 .080 .095 .115 .133 .153 .178 .201 .224 .247 0.1 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 .80 .50 .40 .38 .39 .41 .44 .46 .46 .47 .49 .52 .59 -32 -110 -152 -176 166 156 145 137 127 116 104 91 81 28.0 21.8 16.6 13.3 11.0 9.3 7.9 6.7 5.6 4.7 4.0 3.3 2.5 24.99 12.30 6.73 4.63 3.54 2.91 2.47 2.15 1.91 1.72 1.58 1.45 1.34 157 108 85 71 60 53 43 33 23 13 3 -7 -17 -39.2 -29.6 -26.2 -24.0 -21.9 -20.4 -18.8 -17.5 -16.0 -15.0 -13.9 -13.0 -12.1 AT-41435 Noise Parameters: VCE = 8 V, IC = 10 mA Freq. GHz NFO dB Mag Ang RN/50 1.2 1.2 1.3 1.7 3.0 .12 .10 .05 .30 .54 3 14 28 -154 -118 0.17 0.17 0.17 0.16 0.35 0.1 0.5 1.0 2.0 4.0 Γopt 82 52 56 59 58 61 61 58 53 50 47 40 36 .93 .61 .51 .48 .46 .44 .43 .43 .45 .46 .48 .47 .43 -12 -28 -30 -32 -37 -40 -48 -58 -68 -75 -82 -89 -101 Ordering Information Part Numbers No. of Devices AT-41435G 100 35 micro-X Package Dimensions .085 2.15 4 EMITTER .083 DIA. 2.11 COLLECTOR 016 BASE 1 3 .020 .508 2 .057 ± .010 1.45 ± .25 .022 .56 EMITTER .100 2.54 Notes: (unless otherwise specified) 1. Dimensions are in mm 2. Tolerances in .xxx = ± 0.005 mm .xx = ± 0.13 .455 ± .030 11.54 ± .75 .006 ± .002 .15 ± .05 For product information and a complete list of distributors, please go to our web site: www.avagotech.com Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies Limited in the United States and other countries. Data subject to change. Copyright © 2005-2008 Avago Technologies Limited. All rights reserved. Obsoletes 5989-2647EN AV02-0298EN - April 29, 2008