AVAGO AT

AT-64020
Up to 4 GHz Linear Power Silicon Bipolar Transistor
Data Sheet
Description
Features
The AT-64020 is a high performance NPN silicon bipolar
transistor housed in a hermetic BeO disk package for
good thermal characteristics. This device is ­designed for
use in medium power, wide band amplifier and oscillator
applications operating over VHF, UHF and microwave
frequencies.
• High Output Power:
27.5 dBm Typical P1 dB at 2.0 GHz
26.5 dBm Typical P1 dB at 4.0 GHz
• High Gain at 1 dB Compression:
10.0 dB Typical G1 dB at 2.0 GHz
6.5 dB Typical G1 dB at 4.0 GHz • 35% Total Efficiency
• Emitter Ballast Resistors
• Hermetic, Metal/Beryllia Package
Excellent device uniformity, performance and reliability
are produced by the use of ion-implantation, selfalignment techniques, and gold metallization in the
fabrication of these devices. The use of ion-implanted
ballast resistors ensures uniform current distribution
through the multiple emitter fingers.
200 mil BeO Package
AT-64020 Absolute Maximum Ratings
Absolute
Symbol
Parameter
Units
Maximum[1]
VEBO
Emitter-Base Voltage
V2
VCBO
Collector-Base Voltage
V
40
VCEO
Collector-Emitter Voltage
V20
IC
Collector Current
mA200
PT
Power Dissipation [2,3]
W
3
Tj
Junction Temperature
°C200
TSTG
Storage Temperature
°C
-65 to 200
Thermal Resistance [2,4]:
θjc = 40°C/W
Notes:
1. Permanent damage may occur if any of
these limits are exceeded.
2. Tcase = 25°C.
3. Derate at 25 mW/°C for Tc > 80°C.
4. The small spot size of this technique results
in a higher, though more accurate determination of θjc than do alternate methods.
See MEASUREMENTS section “Thermal Resistance” for more information.
Electrical Specifications, TA = 25°C
Symbol
Parameters and Test Conditions[1]
Min.
Typ.
Insertion Power Gain; VCE = 16 V, IC = 110 mA
f = 2.0 GHz
dB
7.0
f = 4.0 GHz2.0
P1 dB
Power Output @ 1 dB Gain Compression
VCE = 16 V, IC = 110 mA
G1 dB
1 dB Compressed Gain; VCE = 16 V, IC = 110 mA
f = 2.0 GHz
dBm26.527.5
f= 4.0 GHz26.5
f = 2.0 GHz
dB
8.5
10.0
f = 4.0 GHz
6.5
ηT
Total Efficiency at 1 dB Compression:
VCE = 16 V, IC = 110 mA
f = 4.0 GHz
hFE
ICBO
IEBO
Forward Current Transfer Ratio; VCE = 8 V, IC = 110 mA
Collector Cutoff Current; VCB = 16 V
Emitter Cutoff Current; VEB = 1 V
Note:
1. ηT = (RF Output Power)/(RF Input Power + VCEIC).
Units
|S 21E| 2
%
Max.
35.0
—20
50200
µA
100
µA
5.0
AT-64020 Typical Performance, TA = 25°C
30
15
POUT
25
27
150 mA
110 mA
70 mA
26
25
1.0
2.0
3.0
POWER OUT (dBm)
28
G1 dB (dB)
12
9
6
150 mA
110 mA
70 mA
3
1.0
4.0
FREQUENCY (GHz)
2.0
3.0
40
ηT
15
30
10
20
5
10
0
4.0
FREQUENCY (GHz)
Figure 1. Power Output @ 1 dB Gain Compression vs.
Frequency and Collector Current. VCE = 16 V.
20
0
5
10
15
20
25
POWER IN (dBm)
Figure 2. 1 dB Compressed Gain vs. Frequency and
Collector Current. VCE = 16 V.
Figure 3. Output Power and Efficiency vs. Input Power.
VCE = 16 V, IC = 110 mA, f = 4.0 GHz.
35
30
GAIN (dB)
25
MSG
20
MAG
15
|S21E|2
10
MSG
5
0
0.1
0.3 0.5
1.0
3.0 5.0
FREQUENCY (GHz)
Figure 4. Insertion Power Gain, Maximum Available
Gain and Maximum Stable Gain vs. Frequency.
VCE = 16 V, IC = 110 mA.
Typical Scattering Parameters, Common Emitter, ZO = 50 Ω, TA = 25°C, VCE = 16 V, IC = 110 mA
Freq. S11
S21
GHz
Mag.
Ang.
dB
Mag.
Ang.
dB
0.1
.61
-116
30.0
31.51
130
-33.1
0.5
.75
-173
18.4
8.27
86
-28.8
1.0
.75
171
12.5
4.23
66
-27.4
1.5
.74
159
9.22.90
50
-23.5
2.0
.74
148
7.02.23
35
-21.6
2.5
.73
141
5.2
1.8226
-19.8
3.0
.73
130
3.8
1.56
12
-17.5
3.5
.74
1192.7
1.37
-2
-16.1
4.0
.73
107
1.8
1.23
-16
-14.7
4.5
.72
93
0.9
1.11
-30
-13.3
5.0
.71
79
0.1
1.01
-43
-11.8
A model for this device is available in the DEVICE MODELS section.
0
S12 S22
Mag.
Ang.
Mag.
.022
57
.67
.036
41
.23
.043
49
.20
.067
48
.21
.083
46
.25
.103
47
.27
.133
41
.32
.157
35
.35
.18626
.38
.217
18
.41
.256
8
.42
Ang.
-48
-88
-100
-110
-120
-127
-135
-146
-158
-168
179
EFFICIENCY (%)
29
P1 dB (dBm)
30
Ordering Information
Part Number
AT-64020
No. of Devices
100
200 mil BeO Package Dimensions
4
EMITTER
.300 ± .025
7.62 ± .64
45°
.030
.76
3
1
COLLECTOR
BASE
NO REFERENCE
EMITTER
2
.060
1.52
.048 ± .010
1.21 ± .25
.128
3.25
.205
5.21
Notes:
(unless otherwise specified)
1. Dimensions are in
mm
2. Tolerances
in .xxx = ± 0.005
mm .xx = ± 0.13
3. Base of package is
electrically isolated.
.004 ± .002
.10 ± .05
.023
.57
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www.avagotech.com
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Data subject to change. Copyright © 2008 Avago Technologies Limited. All rights reserved. Obsoletes 5989-2657EN
AV02-1220EN May 5, 2008