AT-64020 Up to 4 GHz Linear Power Silicon Bipolar Transistor Data Sheet Description Features The AT-64020 is a high performance NPN silicon bipolar transistor housed in a hermetic BeO disk package for good thermal characteristics. This device is designed for use in medium power, wide band amplifier and oscillator applications operating over VHF, UHF and microwave frequencies. • High Output Power: 27.5 dBm Typical P1 dB at 2.0 GHz 26.5 dBm Typical P1 dB at 4.0 GHz • High Gain at 1 dB Compression: 10.0 dB Typical G1 dB at 2.0 GHz 6.5 dB Typical G1 dB at 4.0 GHz • 35% Total Efficiency • Emitter Ballast Resistors • Hermetic, Metal/Beryllia Package Excellent device uniformity, performance and reliability are produced by the use of ion-implantation, selfalignment techniques, and gold metallization in the fabrication of these devices. The use of ion-implanted ballast resistors ensures uniform current distribution through the multiple emitter fingers. 200 mil BeO Package AT-64020 Absolute Maximum Ratings Absolute Symbol Parameter Units Maximum[1] VEBO Emitter-Base Voltage V2 VCBO Collector-Base Voltage V 40 VCEO Collector-Emitter Voltage V20 IC Collector Current mA200 PT Power Dissipation [2,3] W 3 Tj Junction Temperature °C200 TSTG Storage Temperature °C -65 to 200 Thermal Resistance [2,4]: θjc = 40°C/W Notes: 1. Permanent damage may occur if any of these limits are exceeded. 2. Tcase = 25°C. 3. Derate at 25 mW/°C for Tc > 80°C. 4. The small spot size of this technique results in a higher, though more accurate determination of θjc than do alternate methods. See MEASUREMENTS section “Thermal Resistance” for more information. Electrical Specifications, TA = 25°C Symbol Parameters and Test Conditions[1] Min. Typ. Insertion Power Gain; VCE = 16 V, IC = 110 mA f = 2.0 GHz dB 7.0 f = 4.0 GHz2.0 P1 dB Power Output @ 1 dB Gain Compression VCE = 16 V, IC = 110 mA G1 dB 1 dB Compressed Gain; VCE = 16 V, IC = 110 mA f = 2.0 GHz dBm26.527.5 f= 4.0 GHz26.5 f = 2.0 GHz dB 8.5 10.0 f = 4.0 GHz 6.5 ηT Total Efficiency at 1 dB Compression: VCE = 16 V, IC = 110 mA f = 4.0 GHz hFE ICBO IEBO Forward Current Transfer Ratio; VCE = 8 V, IC = 110 mA Collector Cutoff Current; VCB = 16 V Emitter Cutoff Current; VEB = 1 V Note: 1. ηT = (RF Output Power)/(RF Input Power + VCEIC). Units |S 21E| 2 % Max. 35.0 —20 50200 µA 100 µA 5.0 AT-64020 Typical Performance, TA = 25°C 30 15 POUT 25 27 150 mA 110 mA 70 mA 26 25 1.0 2.0 3.0 POWER OUT (dBm) 28 G1 dB (dB) 12 9 6 150 mA 110 mA 70 mA 3 1.0 4.0 FREQUENCY (GHz) 2.0 3.0 40 ηT 15 30 10 20 5 10 0 4.0 FREQUENCY (GHz) Figure 1. Power Output @ 1 dB Gain Compression vs. Frequency and Collector Current. VCE = 16 V. 20 0 5 10 15 20 25 POWER IN (dBm) Figure 2. 1 dB Compressed Gain vs. Frequency and Collector Current. VCE = 16 V. Figure 3. Output Power and Efficiency vs. Input Power. VCE = 16 V, IC = 110 mA, f = 4.0 GHz. 35 30 GAIN (dB) 25 MSG 20 MAG 15 |S21E|2 10 MSG 5 0 0.1 0.3 0.5 1.0 3.0 5.0 FREQUENCY (GHz) Figure 4. Insertion Power Gain, Maximum Available Gain and Maximum Stable Gain vs. Frequency. VCE = 16 V, IC = 110 mA. Typical Scattering Parameters, Common Emitter, ZO = 50 Ω, TA = 25°C, VCE = 16 V, IC = 110 mA Freq. S11 S21 GHz Mag. Ang. dB Mag. Ang. dB 0.1 .61 -116 30.0 31.51 130 -33.1 0.5 .75 -173 18.4 8.27 86 -28.8 1.0 .75 171 12.5 4.23 66 -27.4 1.5 .74 159 9.22.90 50 -23.5 2.0 .74 148 7.02.23 35 -21.6 2.5 .73 141 5.2 1.8226 -19.8 3.0 .73 130 3.8 1.56 12 -17.5 3.5 .74 1192.7 1.37 -2 -16.1 4.0 .73 107 1.8 1.23 -16 -14.7 4.5 .72 93 0.9 1.11 -30 -13.3 5.0 .71 79 0.1 1.01 -43 -11.8 A model for this device is available in the DEVICE MODELS section. 0 S12 S22 Mag. Ang. Mag. .022 57 .67 .036 41 .23 .043 49 .20 .067 48 .21 .083 46 .25 .103 47 .27 .133 41 .32 .157 35 .35 .18626 .38 .217 18 .41 .256 8 .42 Ang. -48 -88 -100 -110 -120 -127 -135 -146 -158 -168 179 EFFICIENCY (%) 29 P1 dB (dBm) 30 Ordering Information Part Number AT-64020 No. of Devices 100 200 mil BeO Package Dimensions 4 EMITTER .300 ± .025 7.62 ± .64 45° .030 .76 3 1 COLLECTOR BASE NO REFERENCE EMITTER 2 .060 1.52 .048 ± .010 1.21 ± .25 .128 3.25 .205 5.21 Notes: (unless otherwise specified) 1. Dimensions are in mm 2. Tolerances in .xxx = ± 0.005 mm .xx = ± 0.13 3. Base of package is electrically isolated. .004 ± .002 .10 ± .05 .023 .57 For product information and a complete list of distributors, please go to our web site: www.avagotech.com Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies, Limited in the United States and other countries. Data subject to change. Copyright © 2008 Avago Technologies Limited. All rights reserved. Obsoletes 5989-2657EN AV02-1220EN May 5, 2008