NPN 2N3108 – 2N3110 GENERAL PURPOSE AMPLIFIERS AND SWITCHES C The 2N3108 and 2N3110 are NPN transistors mounted in TO-39 metal package. They are intended for large signal, low noise industrial applications. Compliance to RoHS. B E ABSOLUTE MAXIMUM RATINGS Symbol VCEO VCBO VEBO IC PD TJ TStg Value Ratings Collector-Emitter IB =0 Voltage Collector-Base Voltage IE =0 Emitter-Base Voltage IC =0 Collector Current T = 25° Total Power Dissipation amb Tcase = 25° Junction Temperature Storage Temperature range Unit 2N3108 2N3110 60 40 V 100 80 V V A 5 1 0.8 5 -65 to +150 -65 to +150 W °C THERMAL CHARACTERISTICS Symbol Ratings Value Unit RthJ-a Thermal Resistance, Junction to ambient 219 °C/W RthJ-c Thermal Resistance, Junction to case 35 °C/W COMSET SEMICONDUCTORS 1/3 NPN 2N3108 – 2N3110 ELECTRICAL CHARACTERISTICS Tj=25°C unless otherwise specified Symbol Ratings Test Condition(s) Min Typ Max Unit ICBO Collector Cutoff Current VCB = 60 V, IE = 0 Tamb = 150°C - - 10 µA ICES Collector Cutoff Current VCE = 60 V, VBE = 0 - - 10 nA IEBO Emitter Cutoff Current VBE = 5.0 V, IC = 0 - - 10 nA 100 80 60 40 - - IE = 100 µA, IC = 0 7 - - IC = 150 mA, IB = 15 mA IC = 1 A, IB = 100 mA IC = 150 mA, IB = 15 mA IC = 1 A, IB = 100 mA IC = 150 mA, VCE = 1 V IC = 0.1 mA, VCE = 10 V IC = 500 mA, VCE = 10 V IC = 150 mA, VCE = 10 V Tamb = -55°C IC = 50 mA, VCE = 10 V f = 20MHz IC = 0, VEB = 0.5 V f = 1MHz IE = ie =0, VCB = 10 V 2N3108 f = 1MHz 2N3110 40 20 25 - 0.25 1 1.1 2 120 - 15 - - 60 - - MHz - - 80 pF - - 20 25 pF VCBO VCEO VEBO VCE(SAT) VBE(SAT) hFE Collector-Base Breakdown Voltage Collector-emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter saturation Voltage Base-Emitter saturation Voltage DC Current Gain Transition frequency fT CEBO CCBO Emitter-Base Capacitance Collector-Base Capacitance IC = 100 µA, IE = 0 IC = 30 mA, IB = 0 2N3108 2N3110 2N3108 2N3110 V V V V V - SWITCHING TIMES Symbol Ratings ton Turn-on time toff Turn-off time 08/08/2012 IC = 150 mA; IB1 = 7.5 mA, VCC = 20 V IC = 150 mA IB1 = -IB2 = 7.5 mA VCC = 20 V COMSET SEMICONDUCTORS Value Unit 200 ns 600 2/3 NPN 2N3108 – 2N3110 MECHANICAL DATA CASE TO-39 DIMENSIONS (mm) min max A 8.50 9.39 B 7.74 8.50 C 6.09 6.60 D 0.40 0.53 E - 0.88 F 2.41 2.66 G 4.82 5.33 H 0.71 0.86 J 0.73 1.02 K 12.70 - L 42° 48° Pin 1 : Emitter Pin 2 : Base Pin 3 : Collector Case : Collector Revised August 2012 Information furnished is believed to be accurate and reliable. However, Comset Semiconductors assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. Data are subject to change without notice. Comset Semiconductors makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Comset Semiconductors assume any liability arising out of the application or use of any product and specifically disclaims any and all liability, including without limitation consequential or incidental damages. Comset Semiconductors’ products are not authorized for use as critical components in life support devices or systems. www.comsetsemi.com 08/08/2012 [email protected] COMSET SEMICONDUCTORS 3/3