NPN 2N3700 SILICON PLANAR EPITAXIAL TRANSISTORS The 2N3700 are NPN transistors mounted in TO-18 metal package with the collector connected to the case . They are intended for small signal, low noise industrial applications. Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol VCEO VCBO VEBO IC PD Ratings Value Unit V V V A @ Tamb = 25° 80 140 7 1 0.5 @ Tcase= 25° 1.8 W @ Tcase<100° 1 200 °C -65 to +200 °C Value Unit Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dissipation TJ Junction Temperature TStg Storage Temperature range THERMAL CHARACTERISTICS Symbol Ratings RthJ-a Thermal Resistance, Junction-ambient 350 °C/ W RthJ-c Thermal Resistance, Junction-case 97 °C/ W 17/10/2012 COMSET SEMICONDUCTORS 1/3 NPN 2N3700 ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol ICBO ICBO IEBO VCEO (*) VCBO VEBO hFE (*) Ratings Test Condition(s) Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current Collector Emitter Breakdown Voltage Collector Base Breakdown Voltage Emitter Base Breakdown Voltage DC Current Gain Collector-Emitter saturation Voltage Base-Emitter saturation VBE(SAT) (*) Voltage VCE(SAT) (*) fT Transition frequency hfe Small signal current gain CCBO CEBO rbb’,Cb’c Collector-Base Capacitance Emitter-Base Capacitance Feedback time constant Min Typ Max Unit - - 10 10 10 nA µA nA IC=30 mA, IB=0 80 - - V IC=100 µA, IE=0 140 - - V IE=100 µA, IC=0 7 - - V IC=0.1 mA, VCE=10 V IC=10 mA, VCE=10 V IC=150 mA, VCE=10 V IC=500 mA, VCE=10 V IC=1A, VCE=10 V IC=150 mA, VCE=10 V Tamb = -55° IC=150 mA, IB=15 mA IC=500 mA, IB=50 mA 50 90 100 50 15 - 300 - - IC=150 mA, IB=15 mA VCB=90 V, IE=0V VCB=90 V, IE=0V, Tj=150°C VBE=5.0 V, IC=0 IC=50 mA, VCE=10 V f= 20MHz IC=1 mA, VCE=5.0 V f= 1 KHz IE= 0 ,VCB=10 V f = 1MHz IC= 0 ,VEB=0.5 V f = 1MHz IC=10 mA, VCE=10 V f= 4 MHz - - 40 - - - - 0.2 0.5 - - 1.1 - 100 - MHz 80 - 400 - - 12 - pF - 60 - pF 25 - 400 ps V (*) Pulse conditions : tp < 300 µs, δ =1% 17/10/2012 COMSET SEMICONDUCTORS 2|3 NPN 2N3700 MECHANICAL DATA CASE TO-18 DIMENSIONS (mm) min A B C D E F G H I L max 12.7 0.9 2.54 45° Pin 1 : Pin 2 : Pin 3 : Case : 0.49 5.3 4.9 5.8 1.2 1.16 - emitter base Collector Collector Revised September 2012 Information furnished is believed to be accurate and reliable. However, Comset Semiconductors assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. Data are subject to change without notice. Comset Semiconductors makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Comset Semiconductors assume any liability arising out of the application or use of any product and specifically disclaims any and all liability, including without limitation consequential or incidental damages. Comset Semiconductors’ products are not authorized for use as critical components in life support devices or systems. www.comsetsemi.com 17/10/2012 [email protected] COMSET SEMICONDUCTORS 3|3