COMSET BDT64

SEMICONDUCTORS
BDT64-A-B-C
SILICON DARLINGTON POWER TRANSISTORS
PNP epitaxial-base transistors in a monolithic Dalrington circuit and housed in a TO-220
enveloppe. They are intended for output stages in audio equipment, general amplifiers, and
analogue switching application.
PNP complements are BDT65-A-B-C
Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC
Collector Current
ICM
Collector Peak Current
26/09/2012
Value
BDT65
BDT65A
BDT65B
BDT65C
BDT65
BDT65A
BDT65B
BDT65C
BDT65
BDT65A
BDT65B
BDT65C
BDT65
BDT65A
BDT65B
BDT65C
BDT65
BDT65A
BDT65B
BDT65C
COMSET SEMICONDUCTORS
-60
-80
-100
-120
-60
-80
-100
-120
Unit
V
V
-5
V
-12
A
-20
A
1|5
SEMICONDUCTORS
BDT64-A-B-C
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
IB
Base Current
PT
Power Dissipation
TJ
Junction Temperature
Ts
@ Tmb < 25°
Storage Temperature range
BDT64
BDT64A
BDT64B
BDT64C
BDT64
BDT64A
BDT64B
BDT64C
BDT64
BDT64A
BDT64B
BDT64C
BDT64
BDT64A
BDT64B
BDT64C
Value
Unit
-500
mA
125
Watts
150
°C
-65 to +150
Limiting values in accordance with the Absolute Maximum System (IEC 134)
THERMAL CHARACTERISTICS
Symbol
Rthj-c
26/09/2012
Ratings
Thermal Resistance, Junction to Case
COMSET SEMICONDUCTORS
Value
Unit
1
°C/W
2|5
SEMICONDUCTORS
BDT64-A-B-C
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
IE= 0,VCB = -VCBOmax
ICBO
Collector Cutoff
Current
IE= 0,VCB= -1/2
VCBOmax
TJ= 150 °C
ICEO
Collector Cutoff
Current
IE= 0, VCE= -1/2
VCEOmax
IEBO
Emitter Cutoff
Current
VEB= -5 V, IC= 0
VCEO
Collector-Emitter
I = -30 mA, IB= 0
Breakdown Voltage C
VCE(SAT)
Collector-Emitter
saturation Voltage
(*)
IC= -5 A, IB= -20 mA
IC= -10 A, IB= -100 mA
26/09/2012
BDT64
BDT64A
BDT64B
BDT64C
BDT64
BDT64A
BDT64B
BDT64C
BDT64
BDT64A
BDT64B
BDT64C
BDT64
BDT64A
BDT64B
BDT64C
BDT64
BDT64A
BDT64B
BDT64C
BDT64
BDT64A
BDT64B
BDT64C
BDT64
BDT64A
BDT64B
BDT64C
COMSET SEMICONDUCTORS
Min
Typ
Max
Unit
-
-
-0.4
mA
-
-
-2
mA
-
-
0.2
mA
-
-
-5
mA
-60
-80
-100
-120
-
-
V
-
-
-2
V
-
-
-3
3|5
SEMICONDUCTORS
BDT64-A-B-C
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
VBE(on)
Ratings
Base-Emitter Voltage
IC= -5 A, VCE= -4 V
(*)
IF= -5 A
VECF
C-E Diode Forward
Voltage
IF= -12 A
VCE= -4 V, IC= -1 A
hFE
DC Current Gain (*)
VCE= -4 V, IC= -5 A
VCE= -4 V, IC= -12 A
COB
Output Capacitance
IE= 0, VCB = -10 V
ftest= 1MHz
BDT64
BDT64A
BDT64B
BDT64C
BDT64
BDT64A
BDT64B
BDT64C
BDT64
BDT64A
BDT64B
BDT64C
BDT64
BDT64A
BDT64B
BDT64C
BDT64
BDT64A
BDT64B
BDT64C
BDT64
BDT64A
BDT64B
BDT64C
BDT64
BDT64A
BDT64B
BDT64C
Min
Typ
Max
Unit
-
-
-2.5
V
-
-2
V
-
-2
-
-
1500
-
1000
-
-
-
750
-
-
200
-
pF
-
SWITCHING TIMES
Symbol
ton
toff
Ratings
turn-on time
turn-off time
Test Condition(s)
IC= -5 A , VCC= -30 V
IB1 = -IB2 = -20 mA
Min
Typ
Max
Unit
-
0.5
2.5
2
5
µs
(*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 2.0%
26/09/2012
COMSET SEMICONDUCTORS
4|5
SEMICONDUCTORS
BDT64-A-B-C
MECHANICAL DATA CASE TO-220
DIMENSIONS (mm)
Min.
A
B
C
D
E
F
G
H
L
M
N
P
R
S
T
U
9,90
15,65
13,20
6,45
4,30
2,70
2,60
15,75
1,15
3,50
0,46
2,50
4,98
2.49
0,70
Pin 1 :
Pin 2 :
Pin 3 :
Package
Max.
10,30
15,90
13,40
6,65
4,50
3,15
3,00
17.15
1,40
3,70
1,37
0,55
2,70
5,08
2.54
0,90
Base
Collector
Emitter
Collector
Revised August 2012
Information furnished is believed to be accurate and reliable. However, Comset Semiconductors assumes no responsibility for the consequences of
use of such information nor for any infringement of patents or other rights of third parties which may results from its use. Data are subject to change
without notice. Comset Semiconductors makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does Comset Semiconductors assume any liability arising out of the application or use of any product and specifically disclaims any
and all liability, including without limitation consequential or incidental damages. Comset Semiconductors’ products are not authorized for use as
critical components in life support devices or systems.
www.comsetsemi.com
26/09/2012
[email protected]
COMSET SEMICONDUCTORS
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