SHENZHENFREESCALE SQD40P10-40L

SQD40P10-40L
Automotive P-Channel
100 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
VDS (V)
- 100
RDS(on) () at VGS = - 10 V
0.040
FEATURES
RDS(on) () at VGS = - 4.5 V
0.048
• Halogen-free According to IEC 61249-2-21
Definition
ID (A)
- 38
Configuration
• TrenchFET® Power MOSFET
Single
• Package with Low Thermal Resistance
• AEC-Q101 Qualifiedd
S
TO-252
• 100 % Rg and UIS Tested
• Compliant to RoHS Directive 2002/95/EC
G
Drain Connected to Tab
G
D
D
S
P-Channel MOSFET
Top View
ORDERING INFORMATION
Package
TO-252
Lead (Pb)-free and Halogen-free
SQD40P10-40L-GE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
VDS
LIMIT
Drain-Source Voltage
Gate-Source Voltage
VGS
± 20
TC = 25 °C
Continuous Drain Current
Continuous Source Current (Diode
TC = 125 °C
Conduction)a
Pulsed Drain Currentb
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipationb
L = 0.1 mH
TC = 25 °C
TC = 125 °C
Operating Junction and Storage Temperature Range
ID
- 100
- 22
- 50
IDM
- 150
IAS
- 44
PD
V
- 38
IS
EAS
UNIT
96
136
45
A
mJ
W
TJ, Tstg
- 55 to + 175
°C
SYMBOL
LIMIT
UNIT
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-Ambient
Junction-to-Case (Drain)
PCB
Mountc
RthJA
50
RthJC
1.1
°C/W
Notes
a. Package limited.
b. Pulse test; pulse width  300 μs, duty cycle  2 %.
c. When mounted on 1" square PCB (FR-4 material).
d. Parametric verification ongoing.
1/9
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SQD40P10-40L
Automotive P-Channel
100 V (D-S) 175 °C MOSFET
SPECIFICATIONS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
VDS
VGS = 0 V, ID = - 250 μA
- 100
-
-
VGS(th)
VDS = VGS, ID = - 250 μA
- 1.0
- 2.0
- 2.5
UNIT
Static
Drain-Source Breakdown Voltage
Gate-Source Threshold Voltage
IGSS
Gate-Source Leakage
IDSS
Zero Gate Voltage Drain Current
On-State Drain Currenta
ID(on)
Drain-Source On-State Resistancea
Forward
Transconductanceb
RDS(on)
gfs
VDS = 0 V, VGS = ± 20 V
-
-
± 100
VGS = 0 V
VDS = - 100 V
-
-
-1
VGS = 0 V
VDS = - 100 V, TJ = 125 °C
-
-
- 50
VGS = 0 V
VDS = - 100 V, TJ = 175 °C
-
-
- 250
VGS = - 10 V
VDS- 5 V
- 30
-
-
VGS = - 10 V
ID = - 9.2 A
-
0.033
0.040
VGS = - 10 V
ID = - 9.2 A, TJ = 125 °C
-
-
0.074
VGS = - 10 V
ID = - 9.2 A, TJ = 175 °C
-
-
0.093
VGS = - 4.5 V
ID = - 7.7 A
-
0.037
0.048
-
35
-
-
4433
5545
VDS = - 15 V, ID = - 9.2 A
V
nA
μA
A

S
Dynamicb
Input Capacitance
Ciss
Output Capacitance
Coss
-
301
380
Reverse Transfer Capacitance
Crss
-
208
260
Total Gate Chargec
Qg
-
96
144
Gate-Source
Chargec
Qgs
Gate-Drain Chargec
Qgd
Gate Resistance
Rg
Turn-On Delay
Timec
Rise Timec
Turn-Off Delay Timec
Fall Timec
Source-Drain Diode Ratings and
VGS = 0 V
VGS = - 10 V
VDS = - 25 V, f = 1 MHz
VDS = - 50V, ID = - 9.2 A
-
8.4
-
-
23.5
-
f = 1 MHz
1.5
3.13
4.7
-
11
17
VDD = - 50 V, RL = 6.49 
ID  - 7.7 A, VGEN = - 10 V, Rg = 1.0 
-
11
17
-
78
117
-
15
23
-
-
- 150
A
-
- 0.8
- 1.5
V
td(on)
tr
td(off)
pF
tf
nC

ns
Characteristicsb
Pulsed Currenta
ISM
Forward Voltage
VSD
IF = - 7.7 A, VGS = 0 V
Notes
a. Pulse test; pulse width  300 μs, duty cycle  2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
2/9
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SQD40P10-40L
Automotive P-Channel
100 V (D-S) 175 °C MOSFET
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
40
40
VGS = 10 V thru 4 V
32
ID - Drain Current (A)
ID - Drain Current (A)
32
24
16
VGS = 3 V
8
24
TC = 25 °C
16
8
TC = 125 °C
0
2
4
6
8
0
10
1
2
3
4
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
10
100
8
80
gfs - Transconductance (S)
ID - Drain Current (A)
TC = - 55 °C
0
0
6
TC = 25 °C
4
2
TC = 125 °C
TC = - 55 °C
1
3
5
TC = - 55 °C
TC = 25 °C
60
TC = 125 °C
40
20
0
0
0
2
4
0
5
10
20
30
40
50
80
100
ID - Drain Current (A)
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
Transconductance
0.10
7000
6000
C - Capacitance (pF)
RDS(on) - On-Resistance (Ω)
0.08
0.06
VGS = 4.5 V
0.04
VGS = 10 V
0.02
5000
Ciss
4000
3000
2000
1000
Crss
Coss
0
0.00
0
8
16
24
32
ID - Drain Current (A)
On-Resistance vs. Drain Current
3/9
40
0
20
40
60
VDS - Drain-to-Source Voltage (V)
Capacitance
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SQD40P10-40L
Automotive P-Channel
100 V (D-S) 175 °C MOSFET
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
2.5
RDS(on) - On-Resistance (Normalized)
VGS - Gate-to-Source Voltage (V)
10
ID = 9.2 A
VDS = 50 V
8
6
4
2
20
30
40
50
60
70
80
90
100
VGS = 4.5 V
1.5
1.0
0
25
50
75
100
125
150
175
Qg - Total Gate Charge (nC)
TJ - Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
100
0.25
10
0.20
RDS(on) - On-Resistance (Ω)
IS - Source Current (A)
10
VGS = 10 V
2.0
0.5
- 50 - 25
0
0
ID = 9.2 A
TJ = 150 °C
1
0.1
TJ = 25 °C
0.01
0.15
0.10
TJ = 150 °C
0.05
TJ = 25 °C
0.001
0.0
0.00
0.2
0.4
0.6
0.8
1.0
1.2
0
2
VSD - Source-to-Drain Voltage (V)
10
- 105
ID = 250 μA
0.5
ID = 5 mA
0.2
- 0.1
0
25
50
75
100
TJ - Temperature (°C)
Threshold Voltage
125
150
175
VDS - Drain-to-Source Voltage (V)
0.8
VGS(th) Variance (V)
8
On-Resistance vs. Gate-to-Source Voltage
1.1
4/9
6
VGS - Gate-to-Source Voltage (V)
Source Drain Diode Forward Voltage
- 0.4
- 50 - 25
4
ID = 10 mA
- 110
- 115
- 120
- 125
- 130
- 135
- 50 - 25
0
25
50
75
100
125
150
175
TJ - Junction Temperature (°C)
Drain Source Breakdown vs. Junction Temperature
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SQD40P10-40L
Automotive P-Channel
100 V (D-S) 175 °C MOSFET
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
1000
IDM Limited
ID - Drain Current (A)
100
100 μs
10
1
Limited by RDS(on)*
0.1
0.01
0.01
TC = 25 °C
Single Pulse
1 ms
10 ms
100 ms
1 s,10 s, DC
BVDSS Limited
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10-4
10-3
10-2
Square Wave Pulse Duration (s)
10-1
1
Normalized Thermal Transient Impedance, Junction-to-Case
5/9
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SQD40P10-40L
Automotive P-Channel
100 V (D-S) 175 °C MOSFET
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
Notes:
0.1
PDM
0.05
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 50 °C/W
3. TJM - TA = PDMZthJA(t)
4. Surface Mounted
0.02
0.01
10 -4
Single Pulse
10 -3
10 -2
10 -1
1
10
100
1000
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Note
• The characteristics shown in the two graphs
- Normalized Transient Thermal Impedance Junction to Ambient (25 °C)
- Normalized Transient Thermal Impedance Junction to Case (25 °C)
are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single
pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part
mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities
can widely vary depending on actual application parameters and operating conditions.
6/9
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SQD40P10-40L
Automotive P-Channel
100 V (D-S) 175 °C MOSFET
TO-252AA CASE OUTLINE
E
A
MILLIMETERS
C1
e
b1
D1
e1
E1
L
gage plane height (0.5 mm)
L1
b
L3
H
D
L2
b2
C
A2
A1
INCHES
DIM.
MIN.
MAX.
MIN.
MAX.
A
2.21
2.38
0.087
0.094
A1
0.89
1.14
0.035
0.045
A2
0.030
0.127
0.001
0.005
b
0.71
0.88
0.028
0.035
b1
0.76
1.14
0.030
0.045
b2
5.23
5.44
0.206
0.214
C
0.46
0.58
0.018
0.023
C1
0.46
0.58
0.018
0.023
D
5.97
6.22
0.235
0.245
D1
4.10
4.45
0.161
0.175
E
6.48
6.73
0.255
0.265
E1
4.49
5.50
0.177
0.217
e
e1
2.28 BSC
4.57 BSC
0.090 BSC
0.180 BSC
H
9.65
10.41
0.380
L
1.40
1.78
0.055
0.070
L1
0.64
1.02
0.025
0.040
L2
0.89
1.27
0.035
0.050
L3
1.15
1.52
0.040
0.060
ECN: T11-0110-Rev. L, 18-Apr-11
DWG: 5347
Note
• Dimension L3 is for reference only.
7/9
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0.410
SQD40P10-40L
Automotive P-Channel
100 V (D-S) 175 °C MOSFET
RECOMMENDED MINIMUM PADS FOR DPAK (TO-252)
0.224
0.243
0.087
(2.202)
0.090
(2.286)
(10.668)
0.420
(6.180)
(5.690)
0.180
0.055
(4.572)
(1.397)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
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SQD40P10-40L
Automotive P-Channel
100 V (D-S) 175 °C MOSFET
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
freestyle Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on it s or their behalf (collectively,
“freestyle”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
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the continuing production of any product. To the maximum extent permitted by applicable law, Vi shay disclaims (i) any and all
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product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specification s may vary in different applications an d performance may vary over time. All
operating parameters, including typical pa rameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify freestyle’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
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Material Category Policy
freestyle Intertechnology, Inc. hereby certi fies that all its products that are id entified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwis e specified as non-compliant.
Please note that some freestyle documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
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