SQD40P10-40L Automotive P-Channel 100 V (D-S) 175 °C MOSFET PRODUCT SUMMARY VDS (V) - 100 RDS(on) () at VGS = - 10 V 0.040 FEATURES RDS(on) () at VGS = - 4.5 V 0.048 • Halogen-free According to IEC 61249-2-21 Definition ID (A) - 38 Configuration • TrenchFET® Power MOSFET Single • Package with Low Thermal Resistance • AEC-Q101 Qualifiedd S TO-252 • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC G Drain Connected to Tab G D D S P-Channel MOSFET Top View ORDERING INFORMATION Package TO-252 Lead (Pb)-free and Halogen-free SQD40P10-40L-GE3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL VDS LIMIT Drain-Source Voltage Gate-Source Voltage VGS ± 20 TC = 25 °C Continuous Drain Current Continuous Source Current (Diode TC = 125 °C Conduction)a Pulsed Drain Currentb Single Pulse Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipationb L = 0.1 mH TC = 25 °C TC = 125 °C Operating Junction and Storage Temperature Range ID - 100 - 22 - 50 IDM - 150 IAS - 44 PD V - 38 IS EAS UNIT 96 136 45 A mJ W TJ, Tstg - 55 to + 175 °C SYMBOL LIMIT UNIT THERMAL RESISTANCE RATINGS PARAMETER Junction-to-Ambient Junction-to-Case (Drain) PCB Mountc RthJA 50 RthJC 1.1 °C/W Notes a. Package limited. b. Pulse test; pulse width 300 μs, duty cycle 2 %. c. When mounted on 1" square PCB (FR-4 material). d. Parametric verification ongoing. 1/9 www.freescale.net.cn SQD40P10-40L Automotive P-Channel 100 V (D-S) 175 °C MOSFET SPECIFICATIONS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. VDS VGS = 0 V, ID = - 250 μA - 100 - - VGS(th) VDS = VGS, ID = - 250 μA - 1.0 - 2.0 - 2.5 UNIT Static Drain-Source Breakdown Voltage Gate-Source Threshold Voltage IGSS Gate-Source Leakage IDSS Zero Gate Voltage Drain Current On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward Transconductanceb RDS(on) gfs VDS = 0 V, VGS = ± 20 V - - ± 100 VGS = 0 V VDS = - 100 V - - -1 VGS = 0 V VDS = - 100 V, TJ = 125 °C - - - 50 VGS = 0 V VDS = - 100 V, TJ = 175 °C - - - 250 VGS = - 10 V VDS- 5 V - 30 - - VGS = - 10 V ID = - 9.2 A - 0.033 0.040 VGS = - 10 V ID = - 9.2 A, TJ = 125 °C - - 0.074 VGS = - 10 V ID = - 9.2 A, TJ = 175 °C - - 0.093 VGS = - 4.5 V ID = - 7.7 A - 0.037 0.048 - 35 - - 4433 5545 VDS = - 15 V, ID = - 9.2 A V nA μA A S Dynamicb Input Capacitance Ciss Output Capacitance Coss - 301 380 Reverse Transfer Capacitance Crss - 208 260 Total Gate Chargec Qg - 96 144 Gate-Source Chargec Qgs Gate-Drain Chargec Qgd Gate Resistance Rg Turn-On Delay Timec Rise Timec Turn-Off Delay Timec Fall Timec Source-Drain Diode Ratings and VGS = 0 V VGS = - 10 V VDS = - 25 V, f = 1 MHz VDS = - 50V, ID = - 9.2 A - 8.4 - - 23.5 - f = 1 MHz 1.5 3.13 4.7 - 11 17 VDD = - 50 V, RL = 6.49 ID - 7.7 A, VGEN = - 10 V, Rg = 1.0 - 11 17 - 78 117 - 15 23 - - - 150 A - - 0.8 - 1.5 V td(on) tr td(off) pF tf nC ns Characteristicsb Pulsed Currenta ISM Forward Voltage VSD IF = - 7.7 A, VGS = 0 V Notes a. Pulse test; pulse width 300 μs, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. 2/9 www.freescale.net.cn SQD40P10-40L Automotive P-Channel 100 V (D-S) 175 °C MOSFET TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 40 40 VGS = 10 V thru 4 V 32 ID - Drain Current (A) ID - Drain Current (A) 32 24 16 VGS = 3 V 8 24 TC = 25 °C 16 8 TC = 125 °C 0 2 4 6 8 0 10 1 2 3 4 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 10 100 8 80 gfs - Transconductance (S) ID - Drain Current (A) TC = - 55 °C 0 0 6 TC = 25 °C 4 2 TC = 125 °C TC = - 55 °C 1 3 5 TC = - 55 °C TC = 25 °C 60 TC = 125 °C 40 20 0 0 0 2 4 0 5 10 20 30 40 50 80 100 ID - Drain Current (A) VGS - Gate-to-Source Voltage (V) Transfer Characteristics Transconductance 0.10 7000 6000 C - Capacitance (pF) RDS(on) - On-Resistance (Ω) 0.08 0.06 VGS = 4.5 V 0.04 VGS = 10 V 0.02 5000 Ciss 4000 3000 2000 1000 Crss Coss 0 0.00 0 8 16 24 32 ID - Drain Current (A) On-Resistance vs. Drain Current 3/9 40 0 20 40 60 VDS - Drain-to-Source Voltage (V) Capacitance www.freescale.net.cn SQD40P10-40L Automotive P-Channel 100 V (D-S) 175 °C MOSFET TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 2.5 RDS(on) - On-Resistance (Normalized) VGS - Gate-to-Source Voltage (V) 10 ID = 9.2 A VDS = 50 V 8 6 4 2 20 30 40 50 60 70 80 90 100 VGS = 4.5 V 1.5 1.0 0 25 50 75 100 125 150 175 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature 100 0.25 10 0.20 RDS(on) - On-Resistance (Ω) IS - Source Current (A) 10 VGS = 10 V 2.0 0.5 - 50 - 25 0 0 ID = 9.2 A TJ = 150 °C 1 0.1 TJ = 25 °C 0.01 0.15 0.10 TJ = 150 °C 0.05 TJ = 25 °C 0.001 0.0 0.00 0.2 0.4 0.6 0.8 1.0 1.2 0 2 VSD - Source-to-Drain Voltage (V) 10 - 105 ID = 250 μA 0.5 ID = 5 mA 0.2 - 0.1 0 25 50 75 100 TJ - Temperature (°C) Threshold Voltage 125 150 175 VDS - Drain-to-Source Voltage (V) 0.8 VGS(th) Variance (V) 8 On-Resistance vs. Gate-to-Source Voltage 1.1 4/9 6 VGS - Gate-to-Source Voltage (V) Source Drain Diode Forward Voltage - 0.4 - 50 - 25 4 ID = 10 mA - 110 - 115 - 120 - 125 - 130 - 135 - 50 - 25 0 25 50 75 100 125 150 175 TJ - Junction Temperature (°C) Drain Source Breakdown vs. Junction Temperature www.freescale.net.cn SQD40P10-40L Automotive P-Channel 100 V (D-S) 175 °C MOSFET THERMAL RATINGS (TA = 25 °C, unless otherwise noted) 1000 IDM Limited ID - Drain Current (A) 100 100 μs 10 1 Limited by RDS(on)* 0.1 0.01 0.01 TC = 25 °C Single Pulse 1 ms 10 ms 100 ms 1 s,10 s, DC BVDSS Limited 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 Square Wave Pulse Duration (s) 10-1 1 Normalized Thermal Transient Impedance, Junction-to-Case 5/9 www.freescale.net.cn SQD40P10-40L Automotive P-Channel 100 V (D-S) 175 °C MOSFET THERMAL RATINGS (TA = 25 °C, unless otherwise noted) 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 Notes: 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 50 °C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 0.02 0.01 10 -4 Single Pulse 10 -3 10 -2 10 -1 1 10 100 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient Note • The characteristics shown in the two graphs - Normalized Transient Thermal Impedance Junction to Ambient (25 °C) - Normalized Transient Thermal Impedance Junction to Case (25 °C) are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities can widely vary depending on actual application parameters and operating conditions. 6/9 www.freescale.net.cn SQD40P10-40L Automotive P-Channel 100 V (D-S) 175 °C MOSFET TO-252AA CASE OUTLINE E A MILLIMETERS C1 e b1 D1 e1 E1 L gage plane height (0.5 mm) L1 b L3 H D L2 b2 C A2 A1 INCHES DIM. MIN. MAX. MIN. MAX. A 2.21 2.38 0.087 0.094 A1 0.89 1.14 0.035 0.045 A2 0.030 0.127 0.001 0.005 b 0.71 0.88 0.028 0.035 b1 0.76 1.14 0.030 0.045 b2 5.23 5.44 0.206 0.214 C 0.46 0.58 0.018 0.023 C1 0.46 0.58 0.018 0.023 D 5.97 6.22 0.235 0.245 D1 4.10 4.45 0.161 0.175 E 6.48 6.73 0.255 0.265 E1 4.49 5.50 0.177 0.217 e e1 2.28 BSC 4.57 BSC 0.090 BSC 0.180 BSC H 9.65 10.41 0.380 L 1.40 1.78 0.055 0.070 L1 0.64 1.02 0.025 0.040 L2 0.89 1.27 0.035 0.050 L3 1.15 1.52 0.040 0.060 ECN: T11-0110-Rev. L, 18-Apr-11 DWG: 5347 Note • Dimension L3 is for reference only. 7/9 www.freescale.net.cn 0.410 SQD40P10-40L Automotive P-Channel 100 V (D-S) 175 °C MOSFET RECOMMENDED MINIMUM PADS FOR DPAK (TO-252) 0.224 0.243 0.087 (2.202) 0.090 (2.286) (10.668) 0.420 (6.180) (5.690) 0.180 0.055 (4.572) (1.397) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index 8/9 www.freescale.net.cn SQD40P10-40L Automotive P-Channel 100 V (D-S) 175 °C MOSFET Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. freestyle Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on it s or their behalf (collectively, “freestyle”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. freestyle makes no warranty, representation or guarantee regarding the suitabilit y of the products for any particular purpose or the continuing production of any product. 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