SQD50N03-09 Automotive N-Channel 30 V (D-S) 175 °C MOSFET PRODUCT SUMMARY VDS (V) 30 RDS(on) () at VGS = 10 V 0.009 RDS(on) () at VGS = 4.5 V 0.012 ID (A) FEATURES 50 Configuration • Halogen-free According to IEC 61249-2-21 Definition Single D TO-252 • TrenchFET® Power MOSFET • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC • AEC-Q101 Qualifiedd G Drain Connected to Tab G D S S Top View N-Channel MOSFET ORDERING INFORMATION Package TO-252 Lead (Pb)-free and Halogen-free SQD50N03-09-GE3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ± 20 TC = 25 °Ca Continuous Drain Current Continuous Source Current (Diode TC = 125 °C Conduction)a Pulsed Drain Currentb Single Pulse Avalanche Energy Single Pulse Avalanche Current Maximum Power Dissipationb L = 0.1 mH TC = 25 °C TC = 125 °C Operating Junction and Storage Temperature Range ID V 50 38 IS 50 IDM 200 IAS 39 EAS 76 PD UNIT 71 23 A mJ W TJ, Tstg - 55 to + 175 °C SYMBOL LIMIT UNIT THERMAL RESISTANCE RATINGS PARAMETER Junction-to-Ambient Junction-to-Case (Drain) PCB Mountc RthJA 50 RthJC 2.1 °C/W Notes a. Package limited. b. Pulse test; pulse width 300 μs, duty cycle 2 %. c. When mounted on 1" square PCB (FR-4 material). d. Parametric verification ongoing. 1/9 www.freescale.net.cn SQD50N03-09 Automotive N-Channel 30 V (D-S) 175 °C MOSFET SPECIFICATIONS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Source Leakage VGS = 0 V, ID = 250 μA 30 - - VDS = VGS, ID = 250 μA 1.5 2.0 2.5 VDS = 0 V, VGS = ± 20 V IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward Transconductanceb VDS VGS(th) RDS(on) gfs - - ± 100 VGS = 0 V VDS = 30 V - - 1.0 VGS = 0 V VDS = 30 V, TJ = 125 °C - - 50 VGS = 0 V VDS = 30 V, TJ = 175 °C - - 150 VGS = 10 V VDS5 V 50 - - VGS = 10 V ID = 15 A - 0.006 0.009 VGS = 10 V ID = 15 A, TJ = 125 °C - - 0.014 VGS = 10 V ID = 15 A, TJ = 175 °C - - 0.017 VGS = 4.5 V ID = 15 A - 0.0087 0.012 - 47 - - 2306 2885 VDS = 15 V, ID = 15 A V nA μA A S Dynamicb Input Capacitance Ciss VGS = 0 V Output Capacitance Coss - 570 715 Reverse Transfer Capacitance Crss - 245 310 Total Gate Chargec Qg - 39.5 60 - 6.4 - - 6 - 1 1.9 2.8 - 10 15 - 10 15 - 22 33 - 8 12 - - 200 A - 0.85 1.2 V Gate-Source Chargec Gate-Drain Chargec Gate Resistance Turn-On Delay Timec Rise Timec Turn-Off Delay Qgs Fall Timec Source-Drain Diode Ratings and VDS = 15 V, ID = 62 A Qgd Rg f = 1 MHz td(on) tr Timec VGS = 10 V VDS = 15 V, f = 1 MHz td(off) VDD = 15 V, RL = 1 ID 62 A, VGEN = 10 V, Rg = 1 tf pF nC ns Characteristicsb Pulsed Currenta ISM Forward Voltage VSD IF = 18 A, VGS = 0 V Notes a. Pulse test; pulse width 300 μs, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. 2/9 www.freescale.net.cn SQD50N03-09 Automotive N-Channel 30 V (D-S) 175 °C MOSFET TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 120 120 V GS = 10 V thru 5 V 100 ID - Drain Current (A) ID - Drain Current (A) 100 80 V GS = 4 V 60 40 V GS = 3 V 20 0 4 8 12 16 60 40 T C = 25 °C 20 T C = 125 °C V GS = 2 V 0 80 T C = - 55 °C 0 20 0 2 6 8 10 VGS - Gate-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) Transfer Characteristics Output Characteristics 0.05 64 RDS(on) - On-Resistance (Ω) 80 g fs - Transconductance (S) 4 T C = 25 °C T C = - 55 °C 48 32 T C = 125 °C 0.04 0.03 0.02 V GS = 4.5 V 16 0.01 0 0 0 8 16 24 32 40 V GS = 10 V 0 20 40 ID - Drain Current (A) 60 80 100 ID - Drain Current (A) Transconductance On-Resistance vs. Drain Current 10 3000 ID = 62 A C - Capacitance (pF) VGS - Gate-to-Source Voltage (V) Ciss 2500 2000 1500 1000 Coss 500 8 V DS = 15 V 6 4 2 Crss 0 0 0 5 10 15 20 VDS - Drain-to-Source Voltage (V) Capacitance 3/9 25 30 0 5 10 15 20 25 30 Qg - Total Gate Charge (nC) Gate Charge www.freescale.net.cn 35 40 SQD50N03-09 Automotive N-Channel 30 V (D-S) 175 °C MOSFET TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 2.1 100 ID = 30 A IS - Source Current (A) 1.5 1.2 0.9 1 T J = 25 °C 0.1 0.01 0.6 - 50 0.001 - 25 0 25 50 75 100 125 150 175 0 0.2 0.4 0.6 0.8 1.0 TJ - Junction Temperature (°C) VSD - Source-to-Drain Voltage (V) On-Resistance vs. Junction Temperature Source Drain Diode Forward Voltage 0.5 0.04 0.1 VGS(th) Variance (V) 0.05 0.03 0.02 1.2 - 0.3 ID = 5 mA - 0.7 ID = 250 μA T J = 150 °C - 1.1 0.01 T J = 25 °C - 1.5 - 50 0 0 2 4 6 8 10 - 25 0 25 VGS - Gate-to-Source Voltage (V) 50 75 100 125 150 TJ - Temperature (°C) On-Resistance vs. Gate-to-Source Voltage Threshold Voltage 40 ID = 10 mA VDS - Drain-to-Source Voltage (V) RDS(on) - On-Resistance (Ω) T J = 150 °C 10 V GS = 10 V (Normalized) RDS(on) - On-Resistance 1.8 38 36 34 32 30 - 50 - 25 0 25 50 75 100 125 150 175 TJ - Junction Temperature (°C) Drain Source Breakdown vs. Junction Temperature 4/9 www.freescale.net.cn 175 SQD50N03-09 Automotive N-Channel 30 V (D-S) 175 °C MOSFET THERMAL RATINGS (TA = 25 °C, unless otherwise noted) IDM Limited 100 I D - Drain Current (A) 100 µs Limited by RDS(on)* 10 ID Limited 1 ms 10 ms 100 ms, 1 s, 10 s, DC 1 0.1 TC = 25 °C Single Pulse BVDSS Limited 0.01 0.01 * VGS 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) minimum VGS at which R DS(on) is specified Safe Operating Area 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 1 10 100 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 5/9 www.freescale.net.cn 1000 SQD50N03-09 Automotive N-Channel 30 V (D-S) 175 °C MOSFET THERMAL RATINGS (TA = 25 °C, unless otherwise noted) 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 10 100 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Note • The characteristics shown in the two graphs - Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C) - Normalized Transient Thermal Impedance Junction-to-Case (25 °C) are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities can widely vary depending on actual application parameters and operating conditions. 6/9 www.freescale.net.cn SQD50N03-09 Automotive N-Channel 30 V (D-S) 175 °C MOSFET TO-252AA CASE OUTLINE E A MILLIMETERS C1 e b1 D1 e1 E1 L gage plane height (0.5 mm) L1 b L3 H D L2 b2 C A2 A1 INCHES DIM. MIN. MAX. MIN. MAX. A 2.21 2.38 0.087 0.094 A1 0.89 1.14 0.035 0.045 A2 0.030 0.127 0.001 0.005 b 0.71 0.88 0.028 0.035 b1 0.76 1.14 0.030 0.045 b2 5.23 5.44 0.206 0.214 C 0.46 0.58 0.018 0.023 C1 0.46 0.58 0.018 0.023 D 5.97 6.22 0.235 0.245 D1 4.10 4.45 0.161 0.175 E 6.48 6.73 0.255 0.265 E1 4.49 5.50 0.177 0.217 e e1 2.28 BSC 4.57 BSC 0.090 BSC 0.180 BSC H 9.65 10.41 0.380 L 1.40 1.78 0.055 0.070 L1 0.64 1.02 0.025 0.040 L2 0.89 1.27 0.035 0.050 L3 1.15 1.52 0.040 0.060 ECN: T11-0110-Rev. L, 18-Apr-11 DWG: 5347 Note • Dimension L3 is for reference only. 7/9 www.freescale.net.cn 0.410 SQD50N03-09 Automotive N-Channel 30 V (D-S) 175 °C MOSFET RECOMMENDED MINIMUM PADS FOR DPAK (TO-252) 0.224 0.243 0.087 (2.202) 0.090 (2.286) (10.668) 0.420 (6.180) (5.690) 0.180 0.055 (4.572) (1.397) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index 8/9 Return to Index www.freescale.net.cn SQD50N03-09 Automotive N-Channel 30 V (D-S) 175 °C MOSFET Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. freestyle Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on it s or their behalf (collectively, “freestyle”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. freestyle makes no warranty, representation or guarantee regarding the suitabilit y of the products for any particular purpose or the continuing production of any product. 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