DINTEK DTP0403

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N-Channel 30-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
RDS(on) ()
30
a, e
ID (A)
0.0029 at VGS = 10 V
90
0.0033 at VGS = 4.5 V
90
Qg (Typ)
• TrenchFET® Power MOSFET
• 100 % Rg and UIS Tested
• Compliant to RoHS Directive 2011/65/EU
82 nC
APPLICATIONS
• OR-ing
• Server
• DC/DC
TO-220AB
D
G
S
N-Channel MOSFET
G D S
Top View
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Limit
Drain-Source Voltage
VDS
30
Gate-Source Voltage
VGS
± 20
TC = 70 °C
TA = 25 °C
90e
ID
28.8b, c
Pulsed Drain Current
IDM
Avalanche Current Pulse
IAS
36
EAS
64.8
Continuous Source-Drain Diode Current
L = 0.1 mH
TC = 25 °C
TA = 25 °C
90
TC = 70 °C
TA = 25 °C
IS
A
3.13b, c
250a
175
PD
W
3.75b, c
2.63b, c
TA = 70 °C
TJ, Tstg
Operating Junction and Storage Temperature Range
V
90a, e
TC = 25 °C
Maximum Power Dissipation
A
27b, c
TA = 70 °C
Single Pulse Avalanche Energy
V
90a, e
TC = 25 °C
Continuous Drain Current (TJ = 175 °C)
Unit
°C
- 55 to 175
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Case
Symbol
b, d
Typ.
Max.
t  10 sec
RthJA
32
40
Steady State
RthJC
0.5
0.6
Unit
°C/W
Notes:
a. Based on TC = 25 °C.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 sec.
d. Maximum under steady state conditions is 90 °C/W.
e. Calculated based on maximum junction temperature. Package limitation current is 90 A.
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SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Min.
VDS
VGS = 0 V, ID = 250 µA
30
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
VDS/TJ
VGS(th) Temperature Coefficient
VGS(th)/TJ
Gate-Source Threshold Voltage
ID = 250 µA
VGS(th)
VDS = VGS, ID = 250 µA
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currenta
ID(on)
Drain-Source On-State Resistancea
Forward Transconductancea
RDS(on)
gfs
V
35
mV/°C
- 7.5
1.5
2.5
V
± 100
nA
VDS = 30 V, VGS = 0 V
1
VDS = 30 V, VGS = 0 V, TJ = 55 °C
10
VDS 5 V, VGS = 10 V
90
µA
A
VGS = 10 V, ID = 28.8 A
0.0024
0.0029
VGS = 4.5 V, ID = 27 A
0.0027
0.0033
VDS = 15 V, ID = 28.8 A
160

S
Dynamicb
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
Rg
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
12065
VDS = 15 V, VGS = 0 V, f = 1 MHz
td(off)
pF
970
VDS = 15 V, VGS = 10 V, ID = 28.8 A
171
257
81.5
123
VDS = 15 V, VGS = 4.5 V, ID = 28.8 A
34
f = 1 MHz
1.4
2.1
18
27
VDD = 15 V, RL = 0.625 
ID  24 A, VGEN = 10 V, Rg = 1 
11
17
70
105
tf
10
15
td(on)
55
83
180
270
55
83
12
18
tr
td(off)
nC
29
td(on)
tr
1725
VDD = 15 V, RL = 0.67 
ID  22.5 A, VGEN = 4.5 V, Rg = 1 
tf

ns
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
Pulse Diode Forward Currenta
ISM
Body Diode Voltage
VSD
TC = 25 °C
90
90
IS = 22 A
0.8
1.2
A
V
Body Diode Reverse Recovery Time
trr
52
78
ns
Body Diode Reverse Recovery Charge
Qrr
70.2
105
nC
Reverse Recovery Fall Time
ta
Reverse Recovery Rise Time
tb
IF = 20 A, di/dt = 100 A/µs, TJ = 25 °C
27
25
ns
Notes:
a. Pulse test; pulse width  300 µs, duty cycle  2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
3.0
90
VGS = 10 V thru 4 V
2.4
I D - Drain Current (A)
I D - Drain Current (A)
75
60
45
30
1.8
1.2
TC = 25 °C
0.6
15
VGS = 2 V
0
0.0
TC = 125 °C
VGS = 3 V
TC = - 55 °C
0.0
0.5
1.0
1.5
2.0
VDS - Drain-to-Source Voltage (V)
0
2.5
1
2
3
4
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
600
0.0032
TC = 25 °C
0.0030
R DS(on) – On-Resistance (Ω)
G fs - Transconductance (S)
500
TC = 125 °C
400
300
TC = - 55 °C
200
100
VGS = 4.5 V
0.0028
0.0026
0.0024
0.0022
0
0.0020
0
10
20
30
40
50
60
70
80
0
90
ID - Drain Current (A)
30
45
60
ID - Drain Current (A)
Transconductance
RDS(on) vs. Drain Current
15 000
ID = 28.8 A
V GS - Gate-to-Source Voltage (V)
Ciss
9000
6000
Coss
3000
Crss
0
0
15
75
90
10
12 000
C - Capacitance (pF)
VGS = 10 V
VDS = 15 V
8
VDS = 24 V
6
4
2
0
6
12
18
24
VDS - Drain-to-Source Voltage (V)
Capacitance
30
0
30
60
90
120
150
Qg - Total Gate Charge (nC)
180
Gate Charge
3
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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
100
VGS = 10 V, ID = 28.8 A
VGS = 4.5 V, ID = 27 A
10
1.4
I S - Source Current (A)
R DS(on) - On-Resistance (Normalized)
1.6
1.2
1.0
0.8
1
T J = 150 °C
T J = 25 °C
0.1
0.01
0.6
- 50
0.001
- 25
0
25
50
75
100
125
150
0
175
0.2
0.4
0.6
0.8
1
VSD - Source-to-Drain Voltage (V)
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Forward Diode Voltage vs. Temperature
2.8
0.005
0.004
2.4
TA = 125 °C
V GS(th) Variance (V)
RDS(on) -On-Resistance (Ω)
ID = 28.8 A
0.003
TA = 25 °C
0.002
ID = 250 µA
2.0
1.6
1.2
0.001
0.000
0
2
4
6
8
10
0.8
- 50 - 25
0
50
75
100
TJ - Temperature (°C)
RDS(on) vs. VGS vs. Temperature
Threshold Voltage
1000
*Limited by rDS (on)
I D - Drain Current (A)
100
10
10 ms
100 ms
1
1s
10 s
dc
0.1
0.01
TA = 25 °C
Single Pulse
0.001
0.1
*VGS
1
10
100
VDS - Drain-to-Source Voltage (V)
minimum VGS at which rDS(on) is specified
Safe Operating Area, Junction-to-Ambient
4
25
VGS - Gate-to-Source Voltage (V)
125 150
175
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300
300
250
250
Power Dissipation (W)
ID - Drain Current (A)
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
200
150
Package Limited
100
50
200
150
100
50
0
0
0
25
50
75
100
125
150
175
0
25
50
75
100
125
TC - Case Temperature (°C)
TC - Case Temperature (°C)
Current Derating*
Power Derating
150
175
*The power dissipation PD is based on TJ(max) = 175 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10- 4
10- 3
10- 2
10- 1
1
10
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Case
5
Package Information
TO-220AB
MILLIMETERS
A
E
F
D
H(1)
Q
ØP
3
2
L(1)
1
M*
L
b(1)
INCHES
DIM.
MIN.
MAX.
MIN.
MAX.
A
4.25
4.65
0.167
0.183
b
0.69
1.01
0.027
0.040
b(1)
1.20
1.73
0.047
0.068
c
0.36
0.61
0.014
0.024
D
14.85
15.49
0.585
0.610
E
10.04
10.51
0.395
0.414
e
2.41
2.67
0.095
0.105
e(1)
4.88
5.28
0.192
0.208
F
1.14
1.40
0.045
0.055
H(1)
6.09
6.48
0.240
0.255
J(1)
2.41
2.92
0.095
0.115
L
13.35
14.02
0.526
0.552
L(1)
3.32
3.82
0.131
0.150
ØP
3.54
3.94
0.139
0.155
Q
2.60
3.00
0.102
0.118
ECN: X12-0208-Rev. N, 08-Oct-12
DWG: 5471
Notes
* M = 1.32 mm to 1.62 mm (dimension including protrusion)
Heatsink hole for HVM
C
b
e
J(1)
e(1)
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Din-Tek Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Din-Tek documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
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requirements as per JEDEC JS709A standards. Please note that some Din-Tek documentation may still make reference
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