DTM4435 www.din-tek.jp P-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) FEATURES - 30 RDS(on) () at VGS = - 10 V 0.016 RDS(on) () at VGS = - 4.5 V 0.022 ID (A) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC -8 Configuration Single APPLICATIONS • Adaptor Switch • Notebook SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D S G D Top View P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL VDS LIMIT Drain-Source Voltage Gate-Source Voltage VGS ± 20 Continuous Drain Current TC = 25 °C ID TC = 125 °C Continuous Source Current (Diode Conduction) Pulsed Drain Currenta Single Pulse Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipationa L = 0.1 mH Operating Junction and Storage Temperature Range V -8 - 6.2 IDM - 60 IAS - 25 PD TC = 125 °C UNIT - 6.7 IS EAS TC = 25 °C - 30 31 6.8 2.3 A mJ W TJ, Tstg - 55 to + 175 °C SYMBOL LIMIT UNIT RthJA 85 RthJF 22 THERMAL RESISTANCE RATINGS PARAMETER Junction-to-Ambient PCB Mountb Junction-to-Foot (Drain) Notes: a. Surface mounted on 1" x 1" FR4 board. b. t = 10 s. c. Maximum under steady state conditions is 80 °C/W. d. Based on TC = 25 °C. 1 °C/W DTM4435 www.din-tek.jp SPECIFICATIONS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Source Leakage VDS VGS = 0, ID = - 250 μA - 30 - - VGS(th) VDS = VGS, ID = - 250 μA - 1.5 - 2.0 - 2.5 VDS = 0 V, VGS = ± 20 V IGSS - - ± 100 VGS = 0 V VDS = - 30 V - - -1 - - - 50 Zero Gate Voltage Drain Current IDSS VGS = 0 V VDS = - 30 V, TJ = 125 °C VGS = 0 V VDS = - 30 V, TJ = 175 °C - - - 150 On-State Drain Currenta ID(on) VGS = - 10 V VDS- 5 V - 30 - - Drain-Source On-State Resistancea Forward Transconductanceb RDS(on) VGS = - 10 V ID = - 8 A - 0.013 0.016 VGS = - 10 V ID = - 8 A, TJ = 125 °C - - 0.026 VGS = - 10 V ID = - 8 A, TJ = 175 °C - - 0.030 VGS = - 4.5 V ID = - 6 A - 0.016 0.022 - 22 - - 1736 2170 - 392 490 gfs VDS = - 15 V, ID = - 8 A V nA μA A S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss - 268 335 Total Gate Chargec Qg - 38.3 58 - 5.9 - - 9 - f = 1 MHz 2 - 7 - 12.5 19 VDD = - 15 V, RL = 15 ID - 1 A, VGEN = - 10 V, Rg = 1 - 9 15 - 45.3 68 - 10 15 Gate-Source Chargec Qgs Gate-Drain Chargec Qgd Gate Resistance Rg Turn-On Delay Timec Rise Timec Turn-Off Delay Timec Fall Timec VDS = - 15 V, f = 1 MHz VGS = 0 V VGS = - 10 V VDS = - 15 V, ID = - 4.6 A td(on) tr td(off) tf pF nC ns Source-Drain Diode Ratings and Characteristicsb Pulsed Currenta ISM Forward Voltage VSD IF = - 8 A, VGS = 0 - - - 60 A - - 0.84 - 1.2 V Notes a. Pulse test; pulse width 300 μs, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. 2 DTM4435 www.din-tek.jp TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 50 30 VGS = 10 V thru 5 V 40 ID - Drain Current (A) ID - Drain Current (A) 20 10 VGS = 4 V 5 2 30 TC = 25 °C 20 10 TC = 125 °C VGS = 3 V TC = - 55 °C 0 0 0 2 4 6 8 0 10 2 40 8 10 0.05 RDS(on) - On-Resistance (Ω) 32 TC = 25 °C 24 TC = - 55 °C 16 TC = 125 °C 8 0.04 0.03 VGS = 4.5 V 0.02 VGS = 10 V 0.01 0 0.00 0 5 10 15 20 25 0 10 20 30 40 50 ID - Drain Current (A) ID - Drain Current (A) On-Resistance vs. Drain Current Transconductance 10 3000 2000 VGS - Gate-to-Source Voltage (V) 2500 C - Capacitance (pF) 6 Transfer Characteristics Output Characteristics gfs - Transconductance (S) 4 VGS - Gate-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) Ciss 1500 1000 Coss 500 ID = 4.6 A 8 6 4 2 Crss 0 0 0 5 10 15 20 25 0 30 10 20 30 VDS - Drain-to-Source Voltage (V) Qg - Total Gate Charge (nC) Capacitance Gate Charge 3 40 50 DTM4435 www.din-tek.jp TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 100 ID = 8 A 1.7 10 VGS = 10 V IS - Source Current (A) RDS(on) - On-Resistance (Normalized) 2.0 1.4 1.1 VGS = 4.5 V TJ = 150 °C 1 TJ = 25 °C 0.1 0.01 0.8 0.5 - 50 - 25 0 25 50 75 100 125 150 0.001 0.0 175 0.2 0.4 0.6 0.8 1.0 TJ - Junction Temperature (°C) VSD - Source-to-Drain Voltage (V) On-Resistance vs. Junction Temperature Source Drain Diode Forward Voltage 1.0 1.2 - 30 VDS - Drain-to-Source Voltage (V) ID = 1 mA 0.7 0.4 ID = 5 mA 0.1 - 0.2 - 0.5 - 50 - 25 0 25 50 75 100 125 150 - 32 - 34 - 36 - 38 - 40 - 50 - 25 175 0 25 50 75 100 125 150 175 TJ - Temperature (°C) TJ - Junction Temperature (°C) Threshold Voltage Drain Source Breakdown vs. Junction Temperature IDM Limited 10 I D - Drain Current (A) VGS(th) Variance (V) ID = 250 μA 100 µs Limited by RDS(on)* 5 1 ms 10 ms 1 100 ms 1s 10 s, DC 0.1 TC = 25 °C Single Pulse BVDSS Limited 0.01 0.01 * VGS 100 0.1 1 10 VDS - Drain-to-Source Voltage (V) minimum VGS at which R DS(on) is specified Safe Operating Area 4 DTM4435 www.din-tek.jp THERMAL RATINGS (TA = 25 °C, unless otherwise noted) 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 Notes: 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = R thJA = 85 °C/W 0.02 3. T JM - TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 100 10 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 10 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Note • The characteristics shown in the two graphs - Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C) - Normalized Transient Thermal Impedance Junction-to-Foot (25 °C) are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities can widely vary depending on actual application parameters and operating conditions. 5 Package Information www.din-tek.jp SOIC (NARROW): 8-LEAD JEDEC Part Number: MS-012 8 6 7 5 E 1 3 2 H 4 S h x 45 D C 0.25 mm (Gage Plane) A e B All Leads q A1 L 0.004" MILLIMETERS INCHES DIM Min Max Min Max A 1.35 1.75 0.053 0.069 A1 0.10 0.20 0.004 0.008 B 0.35 0.51 0.014 0.020 C 0.19 0.25 0.0075 0.010 D 4.80 5.00 0.189 0.196 E 3.80 4.00 0.150 e 0.101 mm 1.27 BSC 0.157 0.050 BSC H 5.80 6.20 0.228 0.244 h 0.25 0.50 0.010 0.020 L 0.50 0.93 0.020 0.037 q 0° 8° 0° 8° S 0.44 0.64 0.018 0.026 ECN: C-06527-Rev. I, 11-Sep-06 DWG: 5498 1 Application Note www.din-tek.jp RECOMMENDED MINIMUM PADS FOR SO-8 0.172 (4.369) 0.028 0.022 0.050 (0.559) (1.270) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index APPLICATION NOTE Return to Index 1 0.152 (3.861) 0.047 (1.194) 0.246 (6.248) (0.711) Legal Disclaimer Notice Disclaimer www.din-tek.jp ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Din-Tek Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Din-Tek”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Din-Tek makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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