DRD3080V50 Rectifier Diode DS6075 May 2012 (LN29547) FEATURES Double Side Cooling High Surge Capability KEY PARAMETERS VRRM IF(AV) IFSM 5000V 3083A 55000A VOLTAGE RATINGS Part and Ordering Number DRD3080V50 DRD3080V48 DRD3080V46 DRD3080V44 Repetitive Peak Voltages VRRM V 5000 4800 4600 4400 Conditions VRSM = VRRM+100V Lower voltage grades available. Outline type code: V ORDERING INFORMATION (See Package Details for further information) When ordering, select the required part number shown in the Voltage Ratings selection table. Fig. 1 Package outline For example: DRD3080V48 for a 4800V device Note: Please use the complete part number when ordering and quote this number in any future correspondence relating to your order. 1/7 www.dynexsemi.com DRD3080V50 SEMICONDUCTOR CURRENT RATINGS Tcase = 75°C unless stated otherwise Symbol Parameter Test Conditions Max. Units 3972 A Double Side Cooled IF(AV) Mean forward current IF(RMS) RMS value - 6239 A Continuous (direct) on-state current - 5973 A 2926 A IF Half wave resistive load Single Side Cooled (Anode side) IF(AV) Mean forward current IF(RMS) RMS value - 4596 A Continuous (direct) on-state current - 4066 A Test Conditions Max. Units 3083 A IF Half wave resistive load Tcase = 100°C unless stated otherwise Symbol Parameter Double Side Cooled IF(AV) Mean forward current IF(RMS) RMS value - 4843 A Continuous (direct) on-state current - 4538 A 2033 A IF Half wave resistive load Single Side Cooled (Anode side) IF(AV) Mean forward current IF(RMS) RMS value - 3193 A Continuous (direct) on-state current - 2748 A IF Half wave resistive load 2/7 www.dynexsemi.com DRD3080V50 -3SEMICONDUCTOR SURGE RATINGS Symbol IFSM 2 It IFSM 2 It Parameter Surge (non-repetitive) on-state current 2 I t for fusing Surge (non-repetitive) on-state current Test Conditions Max. Units 10ms half sine, Tcase = 150°C 44 kA VR = 50% VRRM - ¼ sine 9.68 MA s 10ms half sine, Tcase = 150°C 55 kA VR = 0 15.12 MA s Min. Max. Units 2 I t for fusing 2 2 THERMAL AND MECHANICAL RATINGS Symbol Rth(j-c) Rth(c-h) Parameter Thermal resistance – junction to case Thermal resistance – case to heatsink Test Conditions Double side cooled DC - 0.0075 °C/W Single side cooled Anode DC - 0.015 °C/W Cathode DC - 0.015 °C/W Double side - 0.002 °C/W - 0.004 °C/W On-state (conducting) - 160 °C Reverse (blocking) - 150 °C Clamping force 43kN (with mounting compound) Tvj Virtual junction temperature Single side Tstg Storage temperature range -55 150 °C Fm Clamping force 38.0 47.0 kN 3/7 www.dynexsemi.com DRD3080V50 SEMICONDUCTOR CHARACTERISTICS Symbol Parameter Test Conditions Min. Max. Units VFM Forward voltage At 3000A peak, Tcase = 25°C - 1.25 V IRM Peak reverse current At VDRM, Tcase = 150°C - 100 mA QS Total stored charge IF = 2000A, dIRR/dt =4A/µs - 7500 µC Irr Peak reverse recovery current Tcase = 150°C, VR =100V - 190 A VTO Threshold voltage At Tvj = 150°C - 0.82 V rT Slope resistance At Tvj = 150°C - 0.143 m CURVES 8000 25ºC 10000 7000 150ºC 9000 Mean Power Dissipation (W) Instantaneous Forward Current, IFM - (A) 11000 8000 7000 6000 5000 4000 3000 2000 6000 5000 4000 dc 3000 180sine 120 square 2000 60 square 30 square 1000 1000 0 0 0 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 1000 2000 3000 4000 5000 6000 Mean on-state Current (A) Instantaneous Forward Voltage , VFM - ( V ) Fig.2 Maximum (limit) on-state characteristics VTM EQUATION VTM = A + Bln (IT) + C.IT+D.IT Fig.3 Dissipation curves Where A = - 0.630059 B = 0.2338835 C = 0.000166 D = - 0.009367 these values are valid for Tj = 150°C for IF 1000A to 11000A 4/7 www.dynexsemi.com DRD3080V50 -5SEMICONDUCTOR 25000 1400 QS max = IRR max = 81.792*(di/dt)0.5963 4789.7*(di/dt)0.3197 Reverse recovery current , IRR - (A) 1200 Stored Charge, QS - (uC) 20000 15000 Conditions: IF = 2000A VR = 100V Tj = 150oC 10000 5000 QS min = 2771.5*(di/dt)0.3717 1000 800 Conditions: IF = 2000A VR = 100V Tj = 150oC 600 400 200 IRR min = 50.733*(di/dt)0.6536 0 0 0 50 100 150 Rate of decay of forward current, diF/dt - (A/us) Fig.4 Total stored charge 0 50 100 150 Rate of decay of forward current, dIF/dt - (A/us) Fig.5 Maximum reverse recovery current Fig.6 Maximum (limit) transient thermal impedancejunction to case 5/7 www.dynexsemi.com DRD3080V50 SEMICONDUCTOR PACKAGE DETAILS For further package information, please contact Customer Services. All dimensions in mm, unless stated otherwise. DO NOT SCALE. Normal weight: 1100g Clamping force: 43kN±10% Package outline type code:V Note: Some packages may be supplied with gate and or tags. 6/7 www.dynexsemi.com DRD3080V50 -7SEMICONDUCTOR IMPORTANT INFORMATION: This publication is provided for information only and not for resale. The products and information in this publication are intended for use by appropriately trained technical personnel. Due to the diversity of product applications, the information contained herein is provided as a general guide only and does not constitute any guarantee of suitability for use in a specific application.The user must evaluate the suitability of the product and the completeness of the product data for the application. The user is responsible for product selection and ensuring all safety and any warning requirements are met. Should additional product information be needed please contact Customer Service. Although we have endeavoured to carefully compile the information in this publication it may contain inaccuracies or typographical errors. The information is provided without any warranty or guarantee of any kind. This publication is an uncontrolled document and is subject to change without notice. When referring to it please ensure that it is the most up to date version and has not been superseded. The products are not intended for use in applications where a failure or malfunction may cause loss of life, injury or damage to property. The user must ensure that appropriate safety precautions are taken to prevent or mitigate the consequences of a product failure or malfunction. The products must not be touched when operating because there is a danger of electrocution or severe burning. Always use protective safety equipment such as appropriate shields for the product and wear safety glasses. Even when disconnected any electric charge remaining in the product must be discharged and allowed to cool before safe handling using protective gloves. Extended exposure to conditions outside the product ratings may affect reliability leading to premature product failure. Use outside the product ratings is likely to cause permanent damage to the product. In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture, a large current to flow or high voltage arcing, resulting in fire or explosion. Appropriate application design and safety precautions should always be followed to protect persons and property. Product Status & Product Ordering: We annotate datasheets in the top right hand corner of the front page, to indicate product status if it is not yet fully approved for production. The annotations are as follows:Target Information: Preliminary Information: No Annotation: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started. The product design is complete and final characterisation for volume production is in progress.The datasheet represents the product as it is now understood but details may change. The product has been approved for production and unless otherwise notified by Dynex any product ordered will be supplied to the current version of the data sheet prevailing at the time of our order acknowledgement. All products and materials are sold and services provided subject to Dynex’s conditions of sale, which are available on request. Any brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners. HEADQUARTERS OPERATIONS CUSTOMER SERVICE DYNEX SEMICONDUCTOR LIMITED Doddington Road, Lincoln, Lincolnshire, LN6 3LF United Kingdom. Phone: +44 (0) 1522 500500 Fax: +44 (0) 1522 500550 Web: http://www.dynexsemi.com Phone: +44 (0) 1522 502753 / 502901 Fax: +44 (0) 1522 500020 e-mail: [email protected] Dynex Semiconductor Ltd. Technical Documentation – Not for resale. 7/7 www.dynexsemi.com