TSD1N60/TSU1N60 600V N-Channel MOSFET Features ■ 1.0A,600v,RDS(on)=11.5Ω@VGS=10V ■ Gate charge (Typical 7.0nC) ■ High ruggedness ■ Fast switching ■ 100% AvalancheTested ■ Improved dv/dt capability General Description This Power MOSFET is produced using Truesemi’s advanced planar stripe, DMOS technology.This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics, such as fast switching time,low on resistance.low gate charge and especially excellent avalanche characteristics.This power MOSFET is usually used at AC adaptors, on the battery charger and SMPS. Absolute Maximum Ratings Symbol VDSS ID Parameter TSD1N60 Drain to Source Voltage 600 1.0 1.0* A 0.65 0.65* A 4.0 4.0* A VGS Gate to Source Voltage EAS Single Pulsed Avalanche Energy EAR Repetitive Avalanche Energy dv/dt Peak Diode Recovery dv/dt (Note 1) ±30 V 52 mJ (Note 1) 3.0 mJ (Note 3) 4.5 V/ns (Note 2) Total Power Dissipation(@TC = 25 °C) TL V Continuous Drain Current(@TC = 25°C) Drain Current Pulsed TSTG, TJ Units Continuous Drain Current(@TC = 100°C) IDM PD TSU1N60 Derating Factor above 25 °C 30 30 0.23 0.23 Operating Junction Temperature & Storage Temperature W W/ °C -55 ~ 150 °C 300 °C Maximum Lead Temperature for soldering purpose, 1/8 from Case for 5 seconds. Thermal Characteristics Symbol 1/9 Parameter TSD1N60 TSU1N60 Units RθJC Thermal Resistance, Junction-to-Case 4.2 4.2 °C/W RθCS Thermal Resistance, Case-to-Sink Typ 50 50 °C/W RθJA Thermal Resistance, Junction-to-Ambient 110 110 °C/W TSD1N60/TSU1N60 Electrical Characteristics Symbol ( TC = 25 °C unless otherwise noted ) Parameter Test Conditions Min Typ Max Units 600 - - V - V/°C Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0V, ID = 250uA Δ BVDSS Δ TJ Breakdown Voltage Temperature coefficient ID = 250uA, referenced to 25 °C - 0.4 VDS = 600V, VGS = 0V - - 1 uA 10 uA IDSS Drain-Source Leakage Current Gate-Source Leakage, Forward IGSS Gate-source Leakage, Reverse VDS = 480V, TC = 125 °C - - VGS = 30V, VDS = 0V - - 100 nA nA VGS = -30V, VDS = 0V - - -100 2.0 - 4.0 V - 8.5 11.5 Ω - 174 340 On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250uA RDS(ON) Static Drain-Source On-state Resistance VGS =10 V, ID = 0.5A Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance - 185 370 - 80 160 Turn-on Delay Time - 15 35 Rise Time - 75 140 - 30 60 - 35 60 - 7.0 9 - 1.0 VGS =0 V, VDS =25V, f = 1MHz pF Dynamic Characteristics td(on) tr td(off) tf VDD =300V, ID =1A, RG =25 Ω Turn-off Delay Time Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd (Note 4, 5) Gate-Drain Charge(Miller Charge) VDS =480V, VGS =10V, ID =1.0A (Note 4, 5) - 3 - ns nC - Source-Drain Diode Ratings and Characteristics Symbol IS Parameter Test Conditions Typ. Max. Unit. Continuous Source Current Integral Reverse p-n Junction - - 1.0 ISM Pulsed Source Current Diode in the MOSFET - - 4.0 VSD Diode Forward Voltage IS =1.0A, VGS =0V - - 1.4 V trr Reverse Recovery Time - 420 - ns Qrr Reverse Recovery Charge - 0.42 - uC IS=1.0A, VGS=0V, dIF/dt=100A/us ※ NOTES 1. Repeativity rating : pulse width limited by junction temperature 2. L =95mH, IAS =1.0A, VDD = 50V, RG = 50Ω , Starting TJ = 25°C 3. ISD ≤ 1.0A, di/dt ≤ 300A/us, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test : Pulse Width ≤ 300us, Duty Cycle ≤ 2% 5. Essentially independent of operating temperature. 2/9 Min. A TSD1N60/TSU1N60 3/9 TSD1N60/TSU1N60 4/9 TSD1N60/TSU1N60 5/9 TSD1N60/TSU1N60 6/9 TSD1N60/TSU1N60 7/9 TSD1N60/TSU1N60 Package Dimensions 8/9 TSD1N60/TSU1N60 Package Dimensions 9/9