APT100GT60JRDL 600V, 100A, VCE(ON) = 2.1V Typical Resonant Mode Combi IGBT® E E The Thunderbolt IGBT® used in this Resonant Mode Combi is a new generation of high voltage power IGBTs. Using Non-Punch-Through Technology, the Thunderbolt IGBT® offers superior ruggedness and ultrafast switching speed. C G Typical Applications Features "UL Recognized" ISOTOP ® • Low Forward Voltage Drop • Ultra soft recovery diode • Low Tail Current • RBSOA and SCSOA Rated • Integrated Gate Resistor • High Frequency Switching to 50KHz Low EMI, High Reliability • Ultra Low Leakage Current • Resonant Mode Switching • Phase Shifted Bridge C • Welding • Induction heating • RoHS Compliant G E • High Frequency SMPS All Ratings: TC = 25°C unless otherwise specified. Maximum Ratings Symbol Parameter Ratings VCES Collector-Emitter Voltage 600 VGE Gate-Emitter Voltage ±30 IC1 Continuous Collector Current @ TC = 25°C 148 IC2 Continuous Collector Current @ TC = 100°C 80 ICM Pulsed Collector Current 1 300 PD TJ, TSTG file # E145592 • ZVS Phase Shifted Bridge • Low forward Diode Voltage (VF) SSOA 7 -T 22 SO Unit Volts Switching Safe Operating Area @ TJ = 150°C Amps 300A @ 600V Total Power Dissipation Operating and Storage Junction Temperature Range 500 Watts -55 to 150 °C Static Electrical Characteristics Min Typ Max V(BR)CES Collector-Emitter Breakdown Voltage (VGE = 0V, IC = 4mA) 600 - - VGE(TH) Gate Threshold Voltage (VCE = VGE, IC = 2.0mA, Tj = 25°C) 3 4 5 Collector Emitter On Voltage (VGE = 15V, IC = 100A, Tj = 25°C) 1.7 2.1 2.5 Collector Emitter On Voltage (VGE = 15V, IC = 100A, Tj = 125°C) - 2.5 - Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 25°C) 2 - - 75 Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 125°C) 2 - - 1500 Gate-Emitter Leakage Current (VGE = ±30V) - - 300 VCE(ON) ICES IGES Volts μA CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. Microsemi Website - http://www.microsemi.com Unit nA 052-6358 Rev C 6 - 2009 Symbol Characteristic / Test Conditions Dynamic Characteristic Symbol APT100GT60JRDL Characteristic Test Conditions Cies Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance VGEP Gate-to-Emitter Plateau Voltage Min Typ Max - 5150 - - 475 - - 295 - - 8.0 - VGE = 15V - 460 - VGE = 0V, VCE = 25V f = 1MHz Gate Charge Qg Total Gate Charge Qge Gate-Emitter Charge VCE= 300V - 40 - Gate-Collector Charge IC = 100A - 210 - TJ = 150°C, RG = 4.3Ω , VGE = 15V, 300 Qgc SSOA td(on) tr td(off) tf 3 Switching Safe Operating Area L = 100μH, VCE= 600V Current Rise Time Turn-Off Delay Time 40 - Inductive Switching (25°C) - 75 - VCC = 400V - 320 - - 100 - RG = 4.3Ω - 3250 - TJ = +25°C - 3525 - VGE = 15V Current Fall Time IC = 100A Eon1 Turn-On Switching Energy 4 Eon2 Turn-On Switching Energy 5 Eoff Turn-Off Switching Energy 6 - 3125 - td(on) Turn-On Delay Time - 40 - Inductive Switching (125°C) - 75 - Turn-Off Delay Time VCC = 400V - 350 - Current Fall Time VGE = 15V - 100 - Turn-On Switching Energy 4 IC = 100A 3275 - Eon2 Turn-On Switching Energy RG = 4.3Ω - 5 - 4650 - Eoff Turn-Off Switching Energy 6 - 3750 - tr td(off) tf Eon1 Current Rise Time TJ = +125°C pF V nC A - Turn-On Delay Time Unit ns μJ ns μJ Thermal and Mechanical Characteristics Symbol Characteristic / Test Conditions Min Typ Max Unit RθJC Junction to Case (IGBT) - - 0.25 RθJC Junction to Case (DIODE) - - 0.34 WT Package Weight - 29.2 - g - - 10 in·lbf - - 1.1 N·m 2500 - - Volts °C/W Torque Terminals and Mounting Screws VIsolation RMS Voltage (50-60Hz Sinusoidal Waveform from Terminals to Mounting Base for 1 Min.) 052-6358 Rev C 6 - 2009 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 For Combi devices, Ices includes both IGBT and FRED leakages. 3 See MIL-STD-750 Method 3471. 4 Eon1 is the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to z a the IGBT turn-on loss. Tested in inductive switching test circuit shown in figure 21, but with a Silicon Carbide diode. 5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching loss. (See Figures 21, 22.) 6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.) 7 RG is external gate resistance not including gate driver impedance. Microsemi reserves the right to change, without notice, the specifications and information contained herein. Typical Performance Curves APT100GT60JRDL 300 200 V GE 12, 13, &15V = 15V 10V IC, COLLECTOR CURRENT (A) 160 140 TC = 25°C 120 TC = 125°C 100 80 TC = -55°C 60 40 250 9V 200 8V 150 100 7V 50 6V 20 0 0 0 0.5 1 1.5 2 2.5 3 3.5 4 VCE, COLLECTER-TO-EMITTER VOLTAGE (V) FIGURE 1, Output Characteristics(VGE = 15V) 250µs PULSE TEST<0.5 % DUTY CYCLE IC, COLLECTOR CURRENT (A) 180 TJ = -55°C 160 140 120 100 80 TC = 25°C 60 TC = 125°C 40 20 0 0 FIGURE 2, Output Characteristics (TJ = 125°C) 16 VGE, GATE-TO-EMITTER VOLTAGE (V) 200 0 5 10 15 20 25 30 VCE, COLLECTER-TO-EMITTER VOLTAGE (V) J VCE = 120V 12 VCE = 300V 10 8 VCE = 480V 6 4 2 0 2 4 6 8 10 VGE, GATE-TO-EMITTER VOLTAGE (V) I = 100A C T = 25°C 14 0 TJ = 25°C. 250µs PULSE TEST <0.5 % DUTY CYCLE 3.5 3.0 IC = 100A 2.5 2.0 1.5 IC = 50A 1.0 0.5 0 6 8 10 12 14 16 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage 3 2.5 1.5 0.80 0.75 0.70 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) FIGURE 7, Threshold Voltage vs. Junction Temperature IC, DC COLLECTOR CURRENT(A) 0.85 IC = 50A 1 VGE = 15V. 250µs PULSE TEST <0.5 % DUTY CYCLE 0.5 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) FIGURE 6, On State Voltage vs Junction Temperature 180 0.90 IC = 100A 2 1.10 0.95 IC = 200A 3.5 200 1.00 500 4 1.15 1.05 200 300 400 GATE CHARGE (nC) FIGURE 4, Gate Charge VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) IC = 200A 4.0 (NORMALIZED) VGS(TH), THRESHOLD VOLTAGE VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) FIGURE 3, Transfer Characteristics 4.5 100 0 160 140 120 100 80 60 40 20 0 -50 -25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (°C) FIGURE 8, DC Collector Current vs Case Temperature 052-6358 Rev B C - 2009 IC, COLLECTOR CURRENT (A) 180 Typical Performance Curves APT100GT60JRDL 450 td (OFF), TURN-OFF DELAY TIME (ns) td(ON), TURN-ON DELAY TIME (ns) 35 VGE = 15V 30 25 20 15 10 VCE = 400V 5 TJ = 25°C, or 125°C RG = 4.3Ω L = 100µH 0 350 300 VGE =15V,TJ=25°C 250 VGE =15V,TJ=125°C 200 150 100 VCE = 400V RG = 4.3Ω L = 100µH 50 0 0 25 50 75 100 125 150 175 200 225 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 9, Turn-On Delay Time vs Collector Current 250 400 0 25 50 75 100 125 150 175 200 225 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 10, Turn-Off Delay Time vs Collector Current 200 RG = 4.3Ω, L = 100µH, VCE = 400V RG = 4.3Ω, L = 100µH, VCE = 400V 180 160 tf, FALL TIME (ns) tr, RISE TIME (ns) 200 150 100 TJ = 25 or 125°C,VGE = 15V 16000 60 TJ = 25°C, VGE = 15V 12000 V = 400V CE V = +15V GE R = 4.3Ω 14000 G 12000 TJ = 125°C 10000 8000 6000 4000 2000 0 25 50 75 100 125 150 175 200 225 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 12, Current Fall Time vs Collector Current EOFF, TURN OFF ENERGY LOSS (µJ) EON2, TURN ON ENERGY LOSS (µJ) 80 0 0 25 50 75 100 125 150 175 200 225 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 11, Current Rise Time vs Collector Current TJ = 25°C 0 Eon2,200A J 25000 20000 15000 Eoff,200A 10000 Eon2,100A Eoff,100A 5000 Eoff,50A Eon2,50A 0 TJ = 125°C 8000 6000 4000 2000 TJ = 25°C 16000 V = 400V CE = +15V V GE T = 125°C 30000 G 10000 0 25 50 70 100 125 150 175 200 225 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 14, Turn Off Energy Loss vs Collector Current 10 20 30 40 50 RG, GATE RESISTANCE (OHMS) FIGURE 15, Switching Energy Losses vs. Gate Resistance SWITCHING ENERGY LOSSES (µJ) 35000 V = 400V CE V = +15V GE R = 4.3Ω 0 0 25 50 75 100 125 150 175 200 225 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 13, Turn-On Energy Loss vs Collector Current SWITCHING ENERGY LOSSES (µJ) 100 20 0 052-6358 Rev B C - 2009 120 40 50 0 TJ = 125°C, VGE = 15V 140 Eon2,200A V = 400V CE V = +15V GE R = 4.3Ω 14000 G 12000 Eoff,200A 10000 8000 6000 4000 Eon2,100A Eoff,100A 2000 Eoff,50A 0 Eon2,50A 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (°C) FIGURE 16, Switching Energy Losses vs Junction Temperature Typical Performance Curves APT100GT60JRDL 10,000 IC, COLLECTOR CURRENT (A) 350 Cies P C, CAPACITANCE ( F) 5,000 1,000 500 C0es 300 250 200 150 100 50 Cres 0 100 0 10 20 30 40 50 VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) Figure 17, Capacitance vs Collector-To-Emitter Voltage 0 100 200 300 400 500 600 700 VCE, COLLECTOR TO EMITTER VOLTAGE Figure 18,Minimim Switching Safe Operating Area 0.25 0.9 0.20 0.7 0.15 0.5 Note: PDM 0.10 0.3 t1 t2 0.05 t 0.1 SINGLE PULSE 0.05 Duty Factor D = 1/t2 Peak TJ = PDM x ZθJC + TC 0 10 -5 10-4 10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (SECONDS) Figure 19, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration 10 100 50 T = 75°C C 10 T = 100°C C 5 T = 125°C J D = 50 % V = 400V CE R = 4.3Ω 1 F max = min (f max, f max2) 0.05 f max1 = t d(on) + tr + td(off) + tf f max2 = Pdiss - P cond E on2 + E off Pdiss = TJ - T C R θJC G 10 20 30 40 50 60 70 80 90 100 IC, COLLECTOR CURRENT (A) Figure 20, Operating Frequency vs Collector Current 052-6358 Rev C 6 - 2009 FMAX, OPERATING FREQUENCY (kHz) ZθJC, THERMAL IMPEDANCE (°C/W) 0.30 APT100GT60JRDL Gate Voltage APT100DL60 10% TJ = 125°C td(on) tr V CE IC V CC 90% 5% 10% A Collector Current 5% CollectorVoltage D.U.T. Switching Energy Figure 21, Inductive Switching Test Circuit Figure 22, Turn-on Switching Waveforms and Definitions 90% Gate Voltage TJ = 125°C td(off) CollectorVoltage 90% tf 10% 0 Collector Current Switching Energy 052-6358 Rev C 6 - 2009 Figure 23, Turn-off Switching Waveforms and Definitions Typical Performance Curves APT100GT60JRDL ULTRAFAST SOFT RECOVERY ANTI-PARALLEL DIODE All Ratings: TC = 25°C unless otherwise specified. MAXIMUM RATINGS Symbol Characteristic / Test Conditions IF(AV) IF(RMS) IFSM APT100GT60JRDL Maximum Average Forward Current (TC = 60°C, Duty Cycle = 0.5) 100 RMS Forward Current (Square wave, 50% duty) 300 Non-Repetitive Forward Surge Current (TJ = 45°C, 8.3 ms) 600 Unit Amps STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions IF = 100A VF Forward Voltage Min Type Max 1.6 - 2.1 IF = 200A 2.0 IF = 100A, TJ = 125°C 1.25 Unit Volts DYNAMIC CHARACTERISTICS Symbol Characteristic trr Reverse Recovery Time trr Reverse Recovery Time Qrr Reverse Recovery Charge Reverse Recovery Time Qrr Reverse Recovery Charge IRRM Typ Max IF = 1A, diF/dt = -100A/µs, VR = 30V, TJ = 25°C - 110 - - 487 - - 2328 - nC - 11 - Amps - 716 - ns - 5954 - nC - 18 - Amps - 333 - ns - 10002 - nC - 49 - Amps IF = 100A, diF/dt = -200A/µs Maximum Reverse Recovery Current trr Min VR = 400V, TC = 25°C IF = 100A, diF/dt = -200A/µs Maximum Reverse Recovery Current trr Reverse Recovery Time Qrr Reverse Recovery Charge IRRM Maximum Reverse Recovery Current VR = 400V, TC = 125°C IF = 100A, diF/dt = -1000A/µs VR = 400V, TC = 125°C Unit ns 0.35 0.30 0.25 0.20 Note: 0.15 PDM ZθJC, THERMAL IMPEDANCE (°C/W) 0.40 t1 0.10 t2 t Duty Factor D = 1/t2 Peak TJ = PDM x ZθJC + TC 0.05 0 10-5 10-4 1.0 10-3 10-2 10-1 RECTANGULAR PULSE DURATION (seconds) FIGURE 1. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION . 052-6358 Rev C 6 - 2009 IRRM Test Conditions Typical Performance Curves APT100GT60JRDL 250 1000 225 R TJ= 55°C 175 TJ= 150°C TJ= 25°C 150 125 100 75 50 25 0 0 0.5 1 1.5 2 R 100A 10000 50A 6000 4000 2000 0 0 200 400 600 800 1000 600 200A 400 200 0 0 200 400 600 800 1000 -diF/dt, CURRENT RATE OF CHANGE (A/μs) FIGURE 3, Reverse Recovery Time vs. Current Rate of Change 70 60 T = 125°C J V = 400V 200A R 50 40 100A 30 20 50A 10 0 0 200 400 600 800 1000 -diF/dt, CURRENT RATE OF CHANGE (A/μs) FIGURE 5, Reverse Recovery Current vs. Current Rate of Change 400 350 1.0 300 tRR 0.5 IRRM IF(AV) (A) 0.4 QRR 250 200 150 0.3 100 0.2 0 50 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) FIGURE 6, Dynamic Parameters vs Junction Temperature 1000 0 Duty cycle = 0.5 TJ = 45°C 25 50 75 100 125 150 Case Temperature (°C) FIGURE 7, Maximum Average Forward Current vs. Case Temperature 900 800 700 600 500 400 300 200 100 0 1 10 100 400 VR, REVERSE VOLTAGE (V) FIGURE 8, Junction Capacitance vs. Reverse Voltage 052-6358 Rev C 6 - 2009 Kf, DYNAMIC PARAMETERS (Normalized to 1000A/μs) -diF/dt, CURRENT RATE OF CHANGE (A/μs) FIGURE 4, Reverse Recovery Charge vs. Current Rate of Change 1. 2 CJ, JUNCTION CAPACITANCE (pF) 100A 50A IRRM, REVERSE RECOVERY CURRENT (A) V = 400V 8000 800 2.5 VF, ANODE-TO-CATHODE VOLTAGE (V) FIGURE 2, Forward Current vs. Forward Voltage 14000 T = 125°C 200A J 12000 trr, COLLECTOR CURRENT (A) IF, FORWARD CURRENT (A) 200 Qrr, REVERSE RECOVERY CHARGE (nC) T = 125°C J V = 400V TJ= 125°C APT100GT60JRDL Vr diF /dt Adjust +18V APT10035LLL 0V D.U.T. 30μH trr/Qrr Waveform PEARSON 2878 CURRENT TRANSFORMER Figure 32, Diode Test Circuit 1 IF - Forward Conduction Current 2 diF /dt - Rate of Diode Current Change Through Zero Crossing. 3 IRRM - Maximum Reverse Recovery Current. 4 trr - Reverse Recovery Time, measured from zero crossing where diode current goes from positive to negative, to the point at which the straight line through IRRM and 0.25 IRRM passes through zero. 5 1 4 Zero 5 0.25 IRRM 3 2 Qrr - Area Under the Curve Defined by IRRM and trr. Figure 33, Diode Reverse Recovery Waveform and Definitions SOT-227 (ISOTOP®) Package Outline 11.8 (.463) 12.2 (.480) 31.5 (1.240) 31.7 (1.248) 7.8 (.307) 8.2 (.322) r = 4.0 (.157) (2 places) 8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 25.2 (0.992) 0.75 (.030) 12.6 (.496) 25.4 (1.000) 0.85 (.033) 12.8 (.504) 4.0 (.157) 4.2 (.165) (2 places) 3.3 (.129) 3.6 (.143) 14.9 (.587) 15.1 (.594) 1.95 (.077) 2.14 (.084) * Emitter/Anode 052-6358 Rev C 6 - 2009 30.1 (1.185) 30.3 (1.193) Collector/Cathode * Emitter/Anode terminals are shorted internally. Current handling capability is equal for either Emitter/Anode terminal. 38.0 (1.496) 38.2 (1.504) * Emitter/Anode Gate ) Dimensions in Millimeters and (Inches Microsemi’s products are covered by one or more of U.S. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743, 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. US and Foreign patents pending. All Rights Reserved.