2SA1 037 SOT-23 TRANSISTOR(PNP) FEATURES ∙ Excellent hFE linearity. ∙ Complments the 2SC2412 1. BASE 2. EMITTER 3. COLLECTOR MARKING : FQ, FR, FS MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -6 V IC Collector Current -Continuous 150 mA PC Collector Power Dissipation 200 mW TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=-50μA,IE=0 -60 V Collector-emitter breakdown voltage V(BR)CEO IC=-1mA,IB=0 -50 V Emitter-base breakdown voltage V(BR)EBO IE=-50μA,IC=0 -6 V Collector cut-off current ICBO VCB=-60V,IE=0 -0.1 μA Emitter cut-off current IEBO VEB=-6V,IC=0 -0.1 μA DC current gain hFE VCE=-6V,IC=-1mA Collector-emitter saturation voltage fT Transition frequency Collector output capacitance CLASSIFICATION OF Rank Range VCE(sat) Cob 120 560 IC=-50mA,IB=-5mA -0.5 VCE=-12V,IC=-2mA,f=30MHz 140 VCB=-12V,IE=0,f=1MHz 4.0 MHz 5.0 hFE Q R S 120 - 270 180 - 390 270 - 560 １ JinYu semiconductor V www.htsemi.com Ｄａｔｅ：２０１１／０５ pF 2SA1 0 3 7 Typical Characteristics ２ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５