2SD1664 TRANSISTOR (NPN) SOT-89 FEATURES z Low VCE(sat), VCE(sat)=0.15V(typical).(IC/IB=500mA/50mA) z Complements to 2SB1132 1. BASE 2. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 32 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 1 A PC Collector power dissipation 500 mW TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ 1 2 3. EMITTER 3 ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=50μA, IE=0 40 V Collector-emitter breakdown voltage V(BR)CEO IC=1mA, IB=0 32 V Emitter-base breakdown voltage V(BR)EBO IE=50μA, IC =0 5 V Collector cut-off current ICBO VCB=20V, IE=0 0.5 μA Emitter cut-off current IEBO VEB=4V, IC=0 0.5 μA DC current gain hFE VCE=3V, IC=100mA VCE(sat) IC=0.5A, IB=50mA Collector-emitter saturation voltage fT Transition frequency Cob Collector output capacitance CLASSIFICATION OF Rank Range Marking JinYu 390 0.4 V VCE=5V, IC=50mA, f=100MHz 150 MHz VCB=10V, IE=0, f=1MHz 15 pF hFE P Q R 82-180 120-270 180-390 DAP DAQ DAR １ semiconductor 82 www.htsemi.com 2SD1664 ２ JinYu semiconductor www.htsemi.com 2SD1664 ３ JinYu semiconductor www.htsemi.com