S901 2 SOT-23 TRANSISTOR(PNP) FEATURES Complementary to S9013 z Excellent hFE linearity z 1. BASE 2. EMITTER 3. COLLECTOR MARKING: 2T1 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -500 mA PC Collector Power Dissipation 300 mW Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Symbol Test Collector-base breakdown voltage V(BR)CBO IC= -100μA, IE=0 -40 V Collector-emitter breakdown voltage V(BR)CEO IC= -1mA, IB=0 -25 V Emitter-base breakdown voltage V(BR)EBO IE=-100μA, IC=0 -5 V Collector cut-off current ICBO VCB=-40V, IE=0 -0.1 μA Collector cut-off current ICEO VCE=-20V, IB=0 -0.1 μA Emitter cut-off current IEBO VEB= -5V, IC=0 -0.1 μA DC current gain hFE VCE=-1V, IC= -50mA Collector-emitter saturation voltage VCE(sat) IC=-500mA, IB= -50mA -0.6 V Base-emitter saturation voltage VBE(sat) IC=-500mA, IB= -50mA -1.2 V Transition frequency fT Collector output capacitance Cob VCE=-6V, conditions IC= -20mA f=30MHz MIN TYP MAX 120 400 150 MHz VCB=-10V,IE=0,f=1MHz 5 CLASSIFICATION OF hFE Rank L H J Range 120-200 200-350 300-400 １ JinYu semiconductor UNIT www.htsemi.com Ｄａｔｅ：２０１１／０５ pF S901 2 ２ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５