2N7002KDW 60V ESD Protected N-Channel Enhancement Mode MOSFET RDS(ON), VGS@10V, IDS@500mA=2Ω RDS(ON), [email protected], IDS@200mA=3Ω SOT-363 FEATURES • • • • • • Advanced Trench Process Technology Ultra Low On Resistance : 2Ω Fast Switching Speed : 20ns Low Input and Output Leakage Current 2KV ESD Protection Specially Designed for High Speed Circuit, Battery Operated System, Drivers : Lamps, Transistors, Relays, Memories, Display, etc.. • Compliant to EU RoHS Directive 2002/95/EC MECHANIAL DATA • Case : SOT-363 Molded Plastic • Terminals : Solder plated, solderable per MIL-STD-750, Method 2026 • Marking : 702 Dimensions in inches (millimeters) Maximum Rating and Thermal Characteristics ( TC=25OC unless otherwise noted ) P a r a m e te r S ym b o l Va lue Uni ts D r a i n- S o ur c e Vo lt a g e V DS 60 V G a t e - S o ur c e Vo l ta g e V GS +2 0 V ID 11 5 mA ID M 850 mA PD 0 .2 0 .0 8 W R θJA 625 T J , T S TG -5 5 to +15 0 C o nt i nuo us D r a i n C ur r e nt P ul s e d D r a i n C ur r e nt T C =2 5 O C 1) M a xi m um P o we r D i s s i p a t i o n D e r a ti ng F a c t o r T C =2 5 O C T C = 1 0 0 OC Junction to Ambient Thermal Resistance ( PCB Mounted )2) O p e r a t i ng J unc ti o n a nd S to r a g e Te mp e r a t ur e Ra ng e O C /W O C Note : 1. Maximum DC Current Limit by the Package 2. Surface Mounted on FR4 Board, t<5sec COMPANY RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE REV1.0 : OCT. 2011 PAGE . 1 2N7002KDW Electrical Characteristics ( TC=25OC, unless otherwise noted ) P a ra me te r S ymb o l Te s t C o nd i ti o n Mi n. Typ . Ma x. Uni ts D ra i n-S o urc e B re a k d o wn Vo lta g e B V DSS V GS = 0 V, I D = 2 5 0 uA 60 - - V Ga te Thre s ho ld Vo lta g e V GS (t h) V D S =V GS , I D = 2 5 0 uA 0 .8 - 2 .5 V D ra i n-S o urc e On-S ta te Re s i s ta nc e VGS= 10V, I D= 500mA - 1.3 2 Ω R D S (o n) VGS= 4.5V, I D= 200mA - 1.8 3 Ω S ta ti c Ze ro Ga te Vo lta g e D ra i n C urre nt I DSS VDS=60V, VGS=0V - - 1 uA Gate Body Leakage I GS S V GS = +2 0 V, V D S =0 V - - +1 0 υΑ - 0 .6 0 .8 - 0 .1 6 0 .2 - 0.24 0.32 - 12.8 20 - 28 38 - 36 45 - 4.8 9.6 - 2.4 4.2 Dynamic To ta l Ga te C ha rg e Qg Ga te -S o urc e C ha rg e Q gs Ga te -D ra i n C ha rg e Q gd Turn-On Ti me t Turn-Off Ti me t Inp ut C a p a c i ta nc e C iss Outp ut C a p a c i ta nc e C o ss Re ve rs e Tra ns fe r C a p a c i ta nc e C r ss on o ff V D S = 3 0 V, ID =2 0 0 m A V GS = 4 .5 V VDD=30V ,I D =200mA VGS=10V ,RG=10Ω V D S = 2 5 V, V GS =0 V f= 1 .0 MH Z nC ns pF S o urc e -D ra i n D i o d e Ma x. D i o d e F o r wa rd C urre nt IS - - - 300 mA Ma x.P uls e d S o urc e C urre nt I SM - - - 2000 mA D i o d e F o rwa rd Vo lta g e V SD IS =2 0 0 A , V GS =0 V - 0 .8 4 1 .3 V Switching Test Circuit REV1.0 : OCT. 2011 Gate Charge Test Circuit PAGE . 2 RATING AND CHARACTERISTIC CURVES 2N7002KDW Typical Characteristics Curve ( TC=25OC, unless otherwise noted ) REV1.0 : OCT. 2011 PAGE . 3 RATING AND CHARACTERISTIC CURVES 2N7002KDW Typical Characteristics Curve ( TC=25OC, unless otherwise noted ) REV1.0 : OCT. 2011 PAGE . 4