2N7002KDW 115mA, 60V Dual N-Channel Small Signal MOSFET Elektronische Bauelemente RoHS Compliant Product A Suffix of “-C” specifies halogen & lead-free SOT-363 FEATURES A E Low on-resistance Fast switching Speed Low-voltage drive Easily designed drive circuits ESD protected:2000V 6 L 4 B MECHANICAL DATA 5 Case: SOT-363 Case Material-UL flammability rating 94V-0 Terminals: Solderable per MIL-STD-202, Method 208 Weight: 0.006 grams(approx.) 6 5 4 D2 G1 S1 1 F DEVICE MARKING: RK G2 D1 1 2 3 3 C A B C D E F Millimeter Min. Max. 2.00 2.20 2.15 2.45 1.15 1.35 0.90 1.10 1.20 1.40 0.15 0.35 H J K DG REF. S2 2 REF. G H J K L Millimeter Min. Max. 0.100 REF. 0.525 REF. 0.08 0.15 8° 0.650 TYP. MAXIMUM RATINGS (TA = 25°C unless otherwise specified) SYMBOL RATING UNIT Drain – Source Voltage PARAMETER VDS 60 V Gate – Source Voltage VGS ±20 V ID 115 mA 800 mA 115 mA Continuous Drain Current 1 Pulsed Drain Current IDP Continuous Reverse Drain Current ID 1 Pulsed Reverse Drain Current IDRP 800 mA PD 225 mW TJ, TSTG -55~150 °C Power Dissipation Operating Junction & Storage Temperature Range Note: 1. Pw≦10μS, Duty cycle≦1% 2. When mounted on a 1x0.75x0.062 inch glass epoxy board ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) PARAMETER SYMBOL MIN TYP MAX UNIT TEST CONDITION OFF CHARACTERISTICS Drain-Source Breakdown Voltage V(BR)DSS 60 - - V VGS=0V, ID =10μA Zero Gate Voltage Drain Current IDSS - - 1.0 μA VDS=60V, VGS=0V Gate-Source Leakage IGSS - - ±10 μA VDS=0V , VGS=±20V ON CHARACTERISTICS Gate-Threshold Voltage Static Drain-Source On Resistance VGS(TH) RDS(ON) 1 1.85 2.5 - - 7.5 - - 7.5 80 - - Forward Transfer Admittance gFS* Input Capacitance CISS - 25 50 Output Capacitance COSS - 10 25 Reverse Transfer Capacitance CRSS - 3.0 5 V Ω VDS= VGS, ID =250μA VGS=10V, ID=0.5A VGS=5V, ID=0.05A ms VDS=10V, ID=0.2A pF VGS=0V DYNAMIC CHARACTERISTICS VDS=25V f=1MHz SWITCHING CHARACTERISTICS Turn-on Delay Time Td(ON) - 12 20 Turn-off Delay Time Td(OFF) - 20 30 nS VDD=30V, I D=0.2A RL=150Ω, V Gs=10V, RG=10Ω * Pw≦300μS, Duty cycle≦1% http://www.SeCoSGmbH.com/ 31-Dec-2009 Rev. A Any changes of specification will not be informed individually. Page 1 of 2 2N7002KDW Elektronische Bauelemente 115mA, 60V Dual N-Channel Small Signal MOSFET CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ 31-Dec-2009 Rev. A Any changes of specification will not be informed individually. Page 2 of 2