CMA30E1600PB Thyristor VRRM = 1600 V I TAV = 30 A VT = 1.42 V Single Thyristor Part number CMA30E1600PB Backside: anode 2 1 3 Features / Advantages: Applications: Package: TO-220 ● Thyristor for line frequency ● Planar passivated chip ● Long-term stability ● Line rectifying 50/60 Hz ● Softstart AC motor control ● DC Motor control ● Power converter ● AC power control ● Lighting and temperature control ● Industry standard outline ● RoHS compliant ● Epoxy meets UL 94V-0 IXYS reserves the right to change limits, conditions and dimensions. © 2013 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20130118a CMA30E1600PB Ratings Thyristor Conditions Symbol V RSM/DSM Definition max. non-repetitive reverse/forward blocking voltage TVJ = 25°C max. 1700 Unit V V RRM/DRM max. repetitive reverse/forward blocking voltage TVJ = 25°C 1600 V I R/D reverse current, drain current VR/D = 1600 V TVJ = 25°C 10 µA VR/D = 1600 V TVJ = 125°C 2 mA TVJ = 25°C 1.42 V 1.80 V 1.42 V VT IT = forward voltage drop 30 A IT = 60 A IT = 30 A IT = 60 A I TAV average forward current TC = 115°C 180° sine I T(RMS) RMS forward current VT0 threshold voltage rT slope resistance R thJC thermal resistance junction to case R thCH thermal resistance case to heatsink total power dissipation I TSM max. forward surge current value for fusing typ. TVJ = 125 °C for power loss calculation only Ptot I²t min. 1.92 V T VJ = 150 °C 30 A 47 A TVJ = 150 °C 0.90 V 250 W t = 10 ms; (50 Hz), sine TVJ = 45°C 260 A t = 8,3 ms; (60 Hz), sine VR = 0 V 280 A t = 10 ms; (50 Hz), sine TVJ = 150 °C 220 A t = 8,3 ms; (60 Hz), sine VR = 0 V 240 A t = 10 ms; (50 Hz), sine TVJ = 45°C 340 A²s t = 8,3 ms; (60 Hz), sine t = 10 ms; (50 Hz), sine VR = 0 V 325 A²s TVJ = 150 °C 240 A²s 240 A²s t = 8,3 ms; (60 Hz), sine VR = 0 V VR = 400 V f = 1 MHz TVJ = 25°C PGM max. gate power dissipation t P = 30 µs T C = 150 °C 13 t P = 300 µs average gate power dissipation critical rate of rise of current K/W 0.50 junction capacitance (di/dt) cr mΩ K/W TC = 25°C CJ PGAV 17 0.5 TVJ = 125°C; f = 50 Hz repetitive, IT = 90 A non-repet., IT = 30 A pF 10 W 5 W 0.5 W 150 A/µs t P = 200 µs; di G /dt = 0.2 A/µs; IG = (dv/dt) cr critical rate of rise of voltage VGT gate trigger voltage I GT gate trigger current 0.2 A; VD = ⅔ VDRM 500 A/µs TVJ = 125°C 500 V/µs VD = 6 V TVJ = 25 °C 1.3 TVJ = -40 °C 1.6 V VD = 6 V TVJ = 25 °C 28 mA TVJ = -40 °C 50 mA TVJ = 150 °C 0.2 V 1 mA TVJ = 25 °C 90 mA VD = ⅔ VDRM R GK = ∞; method 1 (linear voltage rise) VGD gate non-trigger voltage I GD gate non-trigger current IL latching current VD = ⅔ VDRM t p = 10 µs IG = 0.2 A; di G /dt = V 0.2 A/µs IH holding current VD = 6 V R GK = ∞ TVJ = 25 °C 60 mA t gd gate controlled delay time VD = ½ VDRM TVJ = 25 °C 2 µs tq turn-off time IG = 0.5 A; di G /dt = 0.5 A/µs VR = 100 V; I T = 30 A; VD = ⅔ VDRM TVJ = 150 °C di/dt = 10 A/µs; dv/dt = IXYS reserves the right to change limits, conditions and dimensions. © 2013 IXYS all rights reserved 150 µs 20 V/µs; t p = 200 µs Data according to IEC 60747and per semiconductor unless otherwise specified 20130118a CMA30E1600PB Package Ratings TO-220 Symbol I RMS Definition Conditions RMS current per terminal Tstg storage temperature T VJ virtual junction temperature min. typ. max. 35 Unit A -55 150 °C -40 150 °C Weight 2 MD mounting torque FC mounting force with clip Product Marking Logo Date Code Lot # 0.4 0.6 Nm 20 60 N Part number C M A 30 E 1600 PB abcdef Part Number g = = = = = = = Thyristor (SCR) Thyristor (up to 1800V) Current Rating [A] Single Thyristor Reverse Voltage [V] TO-220AB (3) YYWW Z XXXXXX Assembly Line Ordering Standard Part Number CMA30E1600PB Similar Part CMA30E1600PN CLA30E1200PB CS22-12io1M CLA30E1200PC CLA30E1200HB CS22-08io1M Equivalent Circuits for Simulation I V0 R0 Marking on Product CMA30E1600PB Package TO-220ABFP (3) TO-220AB (3) TO-220ABFP (3) TO-263AB (D2Pak) (2) TO-247AD (3) TO-220ABFP (3) * on die level Delivery Mode Tube Code No. 503348 Voltage class 1600 1200 1200 1200 1200 800 T VJ = 150°C Thyristor V 0 max threshold voltage 0.9 V R 0 max slope resistance * 14 mΩ IXYS reserves the right to change limits, conditions and dimensions. © 2013 IXYS all rights reserved Quantity 50 Data according to IEC 60747and per semiconductor unless otherwise specified 20130118a CMA30E1600PB Outlines TO-220 Dim. Millimeter Min. Max. Inches Min. Max. A A1 A2 4.32 1.14 2.29 4.82 1.39 2.79 0.170 0.045 0.090 0.190 0.055 0.110 b b2 0.64 1.15 1.01 1.65 0.025 0.045 0.040 0.065 C D 0.35 14.73 0.56 16.00 0.014 0.580 0.022 0.630 E e H1 9.91 2.54 5.85 10.66 BSC 6.85 0.390 0.100 0.230 0.420 BSC 0.270 L L1 12.70 2.79 13.97 5.84 0.500 0.110 0.550 0.230 ØP Q 3.54 2.54 4.08 3.18 0.139 0.100 0.161 0.125 A A1 ØP H1 Q E D 4 3 L 3x b2 2 L1 1 3x b 2x e C A2 2 1 3 IXYS reserves the right to change limits, conditions and dimensions. © 2013 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20130118a CMA30E1600PB Thyristor 250 60 1000 VR = 0 V 50 Hz, 80% VRRM 50 TVJ = 45°C 200 40 IT ITSM 2 It 30 [A] TVJ = 45°C [A] 20 2 [A s] 150 TVJ = 125°C 10 TVJ = 125°C 150°C TVJ = 25°C 0 0.5 1.0 100 1.5 10 2.0 0.01 0.1 VT [V] 1 IGD: TVJ = -40°C IGD: TVJ = 0°C IGD: TVJ = 25°C [V] Fig. 3 I t versus time (1-10 s) 30 TVJ = 125°C tgd ITAVM [μs] [A] dc = 1 0.5 0.4 0.33 0.17 0.08 20 lim. 100 10 typ. 10-1 50 4 5 6 7 8 910 t [ms] IGD: TVJ = 25°C 25 3 40 101 0 0 2 2 102 3 2 1 Fig. 2 Surge overload current ITSM: crest value, t: duration IGD: TVJ = 125°C VG 1 t [s] Fig. 1 Forward characteristics 4 TVJ = 125°C 100 -2 75 10-1 100 0 101 0 40 IG [A] IG [mA] Fig. 4 Gate voltage & gate current 80 120 160 Tcase [°C] Fig. 5 Gate controlled delay time tgd Triggering: A = no; B = possible; C = safe Fig. 6 Max. forward current at case temperature 0.6 RthHA 0.6 0.8 1.0 2.0 4.0 8.0 60 dc = 1 0.5 0.4 0.33 P(AV)40 0.17 0.08 0.4 ZthJC i Rthi (K/W) 1 0.08 2 0.06 3 0.2 4 0.05 5 0.11 [K/W] [W] 0.2 20 0 ti (s) 0.01 0.0001 0.02 0.2 0.11 0.0 0 10 20 30 40 0 IF(AV) [A] 50 100 150 Fig. 7a Power dissipation versus direct output current Fig. 7b and ambient temperature IXYS reserves the right to change limits, conditions and dimensions. © 2013 IXYS all rights reserved 1 10 100 1000 10000 t [ms] Tamb [°C] Fig. 7 Transient thermal impedance junction to case Data according to IEC 60747and per semiconductor unless otherwise specified 20130118a