MCC72-18io8B Thyristor Module VRRM = 2x 1800 V I TAV = 85 A VT = 1.34 V Phase leg Part number MCC72-18io8B Backside: isolated 3 6 1 5 2 Features / Advantages: Applications: Package: TO-240AA ● Thyristor for line frequency ● Planar passivated chip ● Long-term stability ● Direct Copper Bonded Al2O3-ceramic ● Line rectifying 50/60 Hz ● Softstart AC motor control ● DC Motor control ● Power converter ● AC power control ● Lighting and temperature control ● Isolation Voltage: 3600 V~ ● Industry standard outline ● RoHS compliant ● Soldering pins for PCB mounting ● Base plate: DCB ceramic ● Reduced weight ● Advanced power cycling IXYS reserves the right to change limits, conditions and dimensions. © 2013 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20130605a MCC72-18io8B Ratings Thyristor Conditions Symbol V RSM/DSM Definition max. non-repetitive reverse/forward blocking voltage TVJ = 25°C max. 1900 Unit V V RRM/DRM max. repetitive reverse/forward blocking voltage TVJ = 25°C 1800 V I R/D reverse current, drain current VR/D = 1800 V TVJ = 25°C 200 µA VR/D = 1800 V TVJ = 125°C 5 mA I T = 150 A TVJ = 25°C 1.34 V 1.74 V 1.34 V VT forward voltage drop min. typ. I T = 300 A TVJ = 125 °C I T = 150 A I T = 300 A I TAV average forward current TC = 85°C 180° sine I T(RMS) RMS forward current VT0 threshold voltage rT slope resistance R thJC thermal resistance junction to case for power loss calculation only R thCH thermal resistance case to heatsink Ptot total power dissipation I TSM max. forward surge current I²t value for fusing 1.82 V T VJ = 125 °C 85 A 180 A TVJ = 125 °C 0.85 V 333 W t = 10 ms; (50 Hz), sine TVJ = 45°C 1.70 kA t = 8,3 ms; (60 Hz), sine VR = 0 V 1.84 kA t = 10 ms; (50 Hz), sine TVJ = 125 °C 1.45 kA t = 8,3 ms; (60 Hz), sine VR = 0 V 1.56 kA t = 10 ms; (50 Hz), sine TVJ = 45°C 14.5 kA²s t = 8,3 ms; (60 Hz), sine t = 10 ms; (50 Hz), sine VR = 0 V 14.0 kA²s TVJ = 125 °C 10.4 kA²s t = 8,3 ms; (60 Hz), sine VR = 0 V VR = 400 V f = 1 MHz TVJ = 25°C PGM max. gate power dissipation t P = 30 µs T C = 125 °C 10.1 kA²s 119 t P = 300 µs average gate power dissipation critical rate of rise of current K/W 0.20 junction capacitance (di/dt) cr mΩ K/W TC = 25°C CJ PGAV 3.2 0.3 TVJ = 125°C; f = 50 Hz repetitive, IT = 250 A pF 10 W 5 W 0.5 W 150 A/µs t P = 200 µs; di G /dt = 0.45 A/µs; I G = 0.45 A; VD = ⅔ VDRM non-repet., IT = 85 A 500 A/µs (dv/dt) cr critical rate of rise of voltage TVJ = 125°C VGT gate trigger voltage VD = 6 V TVJ = 25 °C TVJ = -40 °C 2.6 V I GT gate trigger current VD = 6 V TVJ = 25 °C 150 mA TVJ = -40 °C 200 mA TVJ = 125 °C 0.2 V 10 mA TVJ = 25 °C 450 mA VD = ⅔ VDRM 1000 V/µs R GK = ∞; method 1 (linear voltage rise) VGD gate non-trigger voltage I GD gate non-trigger current IL latching current VD = ⅔ VDRM t p = 10 µs 2.5 V IG = 0.45 A; di G /dt = 0.45 A/µs IH holding current VD = 6 V R GK = ∞ TVJ = 25 °C 200 mA t gd gate controlled delay time VD = ½ VDRM TVJ = 25 °C 2 µs tq turn-off time IG = 0.45 A; di G /dt = 0.45 A/µs VR = 100 V; I T = 150 A; VD = ⅔ VDRM TVJ = 125 °C di/dt = 10 A/µs; dv/dt = IXYS reserves the right to change limits, conditions and dimensions. © 2013 IXYS all rights reserved 185 µs 20 V/µs; t p = 200 µs Data according to IEC 60747and per semiconductor unless otherwise specified 20130605a MCC72-18io8B Package Ratings TO-240AA Symbol I RMS Definition Conditions RMS current per terminal min. TVJ virtual junction temperature T op operation temperature Tstg storage temperature -40 typ. max. 200 Unit A -40 125 °C -40 100 °C 125 °C Weight 90 g MD mounting torque 2.5 4 Nm MT terminal torque 2.5 4 Nm d Spp/App d Spb/Apb VISOL creepage distance on surface | striking distance through air t = 1 minute Part Number MCC72-18io8B Equivalent Circuits for Simulation I V0 R0 16.0 50/60 Hz, RMS; IISOL ≤ 1 mA Marking on Product MCC72-18io8B * on die level Delivery Mode Box 9.7 mm 16.0 mm 3600 V 3000 V Quantity 6 Code No. 454575 T VJ = 125 °C Thyristor V 0 max threshold voltage 0.85 R 0 max slope resistance * 2 IXYS reserves the right to change limits, conditions and dimensions. © 2013 IXYS all rights reserved 13.0 t = 1 second isolation voltage Ordering Standard terminal to terminal terminal to backside V mΩ Data according to IEC 60747and per semiconductor unless otherwise specified 20130605a MCC72-18io8B Outlines TO-240AA 3 IXYS reserves the right to change limits, conditions and dimensions. © 2013 IXYS all rights reserved 6 1 5 2 Data according to IEC 60747and per semiconductor unless otherwise specified 20130605a MCC72-18io8B Thyristor 250 105 2500 DC 180° sin 120° 60° 30° VR = 0 V 50 Hz, 80% V RRM 200 2000 ITSM IFSM I2t 1500 TVJ = 45°C [A] 150 104 1000 ITAVM TVJ = 45°C TVJ = 125°C [A] 100 [A2s] TVJ = 125°C 50 500 0 10-3 103 10-2 10-1 100 101 1 2 3 t [s] 6 8 0 10 0 50 t [ms] Fig. 1 Surge overload current ITSM, IFSM: Crest value, t: duration 150 Fig. 3 Maximum forward current at case temperature Fig. 2 I2t versus time (1-10 ms) 250 100 TC [°C] RthJA 100 [K/W] 0.4 tp = 30 µs tp = 500 µs 0.6 200 0.8 10 1 150 VG 1.2 PT PGM = 120 W 60 W PGAV = 8 W [V] 1.5 2 [W] 50 1 3 0.1 IGT (TVJ = -40°C) IGT (TVJ = 0°C) IGT (TVJ = 25°C) 25°C DC 180° sin 120° 60° 30° 125°C 100 I GD 0 0 50 100 150 0 50 100 0.01 150 0.1 1 10 IG [A] TA [°C] ITAVM, IFAVM [A] Fig. 4 Power dissipation vs. onstate current and ambient temperature (per thyristor/diode) Fig. 5 Gate trigger characteristics 100 1200 RthKA T [K/W] VJ = 25°C 0.1 1200 0.15 0.2 800 10 0.25 tgd 0.3 Ptot 600 [µs] 0.4 [W] 400 1 0.5 Circuit B6 3x MCC72 or 3x MCD72 limit typ. 0.6 200 0.1 0 0 100 200 300 IdAVM [A] 0 50 100 TA [°C] Fig. 6 Three phase rectifier bridge: Power dissipation versus direct output current and ambient temperature IXYS reserves the right to change limits, conditions and dimensions. © 2013 IXYS all rights reserved 150 0.01 0.1 1 10 IG [A] Fig. 7 Gate trigger delay time Data according to IEC 60747and per semiconductor unless otherwise specified 20130605a MCC72-18io8B Thyristor 1500 RthJA [KW] 0.03 0.06 0.08 1000 0.1 0.15 Ptot 0.25 [W] 0 0.3 Circuit W3 3x MCC72 or 3x MCD72 500 0 50 100 150 200 250 0.5 0 50 IRMS [A] 100 150 TA [°C] Fig. 8 Three phase AC-controller: Power dissipation versus RMS output current and ambient temperature 0.4 RthJC for various conduction angles d: 30° 60° 120° 0.3 180° DC 0.2 DC 0.30 180° 0.31 120° 0.33 60° 0.35 30° 0.37 Constants for ZthJC calculation: 0.1 0 10-3 10-2 10-1 100 101 102 1 0.008 0.0019 2 0.054 0.0470 3 0.238 0.3000 103 Fig. 9 Transient thermal impedance junction to case (per thyristor) 0.6 RthJK for various conduction angles d: 30° 60° 0.5 DC 180° 120° 60° 30° 120° 180° 0.4 DC 0.3 0.50 0.51 0.53 0.55 0.57 Constants for ZthJK calculation: 0.2 0.1 0 10-3 10-2 10-1 100 101 102 103 104 1 2 3 4 0.008 0.054 0.238 0.200 0.0019 0.0470 0.3000 1.2500 Fig. 10 Transient thermal impedance junction to heatsink (per thyristor) IXYS reserves the right to change limits, conditions and dimensions. © 2013 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20130605a