Preliminary Technical Information IXTH16N20D2 IXTT16N20D2 Depletion Mode MOSFET VDSX ID(on) RDS(on) = > ≤ 200V 16A 73mΩ Ω N-Channel TO-247 (IXTH) G Symbol Test Conditions Maximum Ratings VDSX TJ = 25°C to 150°C 200 V VDGX TJ = 25°C to 150°C, RGS = 1MΩ 200 V VGSX Continuous ±20 V VGSM Transient ±30 V PD TC = 25°C 695 W - 55 ... +150 150 - 55 ... +150 °C °C °C 300 260 °C °C 1.13 / 10 Nm/lb.in. 6 4 g g TJ TJM Tstg TL TSOLD 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s Md Mounting Torque (TO-247) Weight TO-247 TO-268 D D (Tab) S TO-268 (IXTT) G S D (Tab) G = Gate S = Source D = Drain Tab = Drain Features • Normally ON Mode • International Standard Packages • Molding Epoxies Meet UL 94 V-0 Flammability Classification Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSX VGS = - 5V, ID = 250μA 200 VGS(off) VDS = 25V, ID = 4mA IGSX VGS = ±20V, VDS = 0V IDSX(off) VDS = VDSX, VGS = - 5V RDS(on) VGS = 0V, ID = 8A, Note 1 ID(on) VGS = 0V, VDS = 25V, Note 1 - 2.0 Advantages V - 4.0 V ±100 nA 5 μA 100 μA TJ = 125°C © 2012 IXYS CORPORATION, All Rights Reserved 73 mΩ 16 A • Easy to Mount • Space Savings • High Power Density Applications • • • • • • Audio Amplifiers Start-up Circuits Protection Circuits Ramp Generators Current Regulators Active Loads DS100260A(08/12) IXTH16N20D2 IXTT16N20D2 Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) gfs Characteristic Values Min. Typ. Max. VDS = 20V, ID = 8A, Note 1 7 Ciss Coss VGS = -10V, VDS = 25V, f = 1MHz Crss td(on) tr td(off) tf Resistive Switching Times VGS = + 5V, VDS = 100V, ID = 8A RG = 3.3Ω (External) Qg(on) Qgs 12 S 5500 pF 1360 pF 607 pF 46 ns 130 ns 270 ns 135 ns 208 nC 28 nC 110 nC 0.21 0.18 °C/W °C/W VGS = + 5V, VDS = 100V, ID = 8A Qgd RthJC RthCS TO-247 Outline Safe-Operating-Area Specification Characteristic Values Min. Typ. Max. Symbol Test Conditions SOA VDS = 200V, ID = 2.1A, TC = 75°C, tp = 5s 420 W Source-Drain Diode Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) VSD IF = 16A, VGS = -10V, Note 1 trr IRM QRM IF = 8A, -di/dt = 100A/μs VR = 100V, VGS = -10V 1.3 265 14.3 1.9 2 ∅P 3 e Terminals: 1 - Gate 3 - Source Dim. Millimeter Min. Max. A 4.7 5.3 2.2 2.54 A1 A2 2.2 2.6 b 1.0 1.4 b1 1.65 2.13 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC 2 - Drain Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC TO-268 Outline Characteristic Values Min. Typ. Max. 0.8 1 V ns A μC Note 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. Terminals: 1 - Gate 3 - Source 2 - Drain Tab - Drain PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXTH16N20D2 IXTT16N20D2 Fig. 1. Output Characteristics @ T J = 25ºC Fig. 2. Extended Output Characteristics @ T J = 25ºC 16 200 VGS = 5V 4V 3V 2V 14 12 1.5V 160 140 1V 10 ID - Amperes ID - Amperes VGS = 5V 180 0V 8 6 1V 120 100 2V 80 1V 60 -1V 4 40 2 0 0 0.1 0.2 0.3 0.4 -2V 20 - 3V 0 0.5 0.6 0V - 1V -2V 0 0.7 5 10 25 30 35 36 VGS = 5V 4V 3V 2V 1V 14 12 32 VGS = 0V 28 - 0.4V 24 ID - Amperes 10 0V 8 6 -1V 20 - 0.8V 16 12 4 - 1.2V 8 -2V 2 - 1.6V 4 - 2.0V - 2.4V -3V 0 0 0 0.2 0.4 0.6 0.8 1 1.2 0 10 20 VDS - Volts 30 40 50 VDS - Volts Fig. 6. Dynamic Resistance vs. Gate Voltage Fig. 5. Drain Current @ T J = 100ºC 40 1.E+10 VGS = 0V 36 ∆VDS = 50V - 25V 1.E+09 32 1.E+08 28 - 0.4V 1.E+07 24 R O - Ohms ID - Amperes 20 Fig. 4. Drain Current @ T J = 25ºC Fig. 3. Output Characteristics @ T J = 125ºC 16 ID - Amperes 15 VDS - Volts VDS - Volts - 0.8V 20 16 4 0 TJ = 25ºC 1.E+05 TJ = 100ºC - 1.2V 1.E+04 - 1.6V 1.E+03 - 2.0V - 2.4V 1.E+02 12 8 1.E+06 1.E+01 0 10 20 30 VDS - Volts © 2012 IXYS CORPORATION, All Rights Reserved 40 50 -5 -4 -3 -2 VGS - Volts -1 0 IXTH16N20D2 IXTT16N20D2 Fig. 8. RDS(on) Normalized to ID = 8A Value vs. Drain Current Fig. 7. Normalized RDS(on) vs. Junction Temperature 1.6 2.6 VGS = 0V 1.5 VGS = 0V I D = 8A 5V - - - - 2.2 R DS(on) - Normalized R DS(on) - Normalized 1.4 1.3 1.2 1.1 1.8 1.4 TJ = 125ºC 1.0 TJ = 25ºC 1.0 0.6 0.9 0.2 0.8 -50 -25 0 25 50 75 100 125 0 150 5 10 15 TJ - Degrees Centigrade 25 30 35 40 Fig. 10. Transconductance Fig. 9. Input Admittance 30 50 VDS = 20V VDS = 20V TJ = - 40ºC, 25ºC, 125ºC 25 g f s - Siemens 40 ID - Amperes 20 ID - Amperes 30 20 TJ = 125ºC 25ºC - 40ºC 10 20 15 10 5 0 -4.0 0 -3.5 -3.0 -2.5 -2.0 -1.5 -1.0 -0.5 0.0 0.5 0 1.0 5 10 15 20 VGS - Volts 25 30 35 40 45 50 ID - Amperes Fig. 11. Normalized Breakdown and Threshold Voltages vs. Junction Temperature Fig. 12. Forward Voltage Drop of Intrinsic Diode 30 1.3 VGS = -10V 25 1.2 20 IS - Amperes BV / VGS(off) VGS(off) @ VDS = 25V 1.1 BVDSX @ VGS = - 5V 1.0 15 10 TJ = 125ºC 0.9 TJ = 25ºC 5 0 0.8 -50 -25 0 25 50 75 100 125 150 TJ - Degrees Centigrade IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 0.3 0.4 0.5 0.6 VSD - Volts 0.7 0.8 0.9 IXTH16N20D2 IXTT16N20D2 Fig. 13. Capacitance Fig. 14. Gate Charge 5 100,000 f = 1 MHz VDS = 100V 4 I D = 8A I G = 10mA 2 10,000 Ciss VGS - Volts Capacitance - PicoFarads 3 Coss 1,000 1 0 -1 -2 -3 -4 Crss -5 100 0 5 10 15 20 25 30 35 0 40 20 40 60 80 100 120 140 160 180 VDS - Volts QG - NanoCoulombs Fig. 15. Forward-Bias Safe Operating Area Fig. 16. Forward-Bias Safe Operating Area @ T C = 25ºC 200 220 @ T C = 75ºC 1,000 1,000 TJ = 150ºC TJ = 150ºC TC = 25ºC Single Pulse TC = 75ºC Single Pulse ID - Amperes RDS(on) Limit 100 25µs ID - Amperes 100 100µs 1ms 10 RDS(on) Limit 25µs 100µs 10 DC 1ms 10ms 100ms DC 1 10ms 100ms 1 1 1.000 100 Fig. 10 17. Maximum Transient Thermal Impedance10 1,000 1 VDS - Volts 100 1,000 VDS - Volts Fig. 17. Maximum Transient Thermal Impedance hvjv 0.300 Z (th)JC - ºC / W 0.100 0.010 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds © 2012 IXYS CORPORATION, All Rights Reserved IXYS REF: T_16N20D2(8C)4-08-10 Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: IXYS: IXTT16N20D2