Transistors IC SMD Type P-Channel 12-V (D-S) MOSFET KI2335DS SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 1 0.55 +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 1. Gate 2.Emitter 2. Source 3. Drain 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol 5 sec Steady State Unit Drain-Source Voltage VDS -12 V Gate-Source Voltage VGS 8 V Continuous Drain Current(TJ=150 ) *1,2 TA=25 ---------------------------------------------- --TA=70 ID Pulsed Drain Current IDM -15 Continuous Source Current (Diode Conduction)*1,2 IS -1.6 Power Dissipation *1,2 TA=25 --------------------------------------------- ----TA=70 PD Jumction Temperature Tj 150 Tstg -55 to +150 Storage Temperature -4.0 -3.3 -3.2 -2.6 1.25 0.8 A A 0.75 0.48 W *1 Surface Mounted on 1" X 1" FR4 Board. *2 Pulse width limited by maximum junction temperature. Thermal Resistance Ratings Ta = 25 Parameter Maximum Junction-to-Ambient * Symbol t 5 sec Maximum Junction-to-Ambient Steady State Maximum Junction-to-Foot (Drain) Steady State RthJA RthJF Typical Maximum 75 100 120 166 40 50 Unit /W * Surface Mounted on 1" X 1" FR4 Board. www.kexin.com.cn 1 Transistors IC SMD Type KI2335DS Electrical Characteristics Ta = 25 Parameter Symbol Drain-Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID =-10 A Gate Threshold Voltage VGS(th) Gate-Body Leakage IGSS Zero Gate Voltage Drain Current IDSS ID(on) On-State Drain Current Drain-Source On-State Resistance * rDS(on) VDS = VGS, ID = -250 A VDS = 0 V, VGS = Min Typ Max -12 V 100 VDS =-9.6V, VGS = 0 V -1 VDS = -9.6 V, VGS = 0 V, TJ = 55 -10 VDS -5V, VGS = -4.5V -15 VDS -5 V, VGS = -2.5V -6 0.042 0.051 VGS = -2.5V, ID = -3.5 A 0.058 0.070 VGS =-1.8 V, ID = -2.0 A 0.082 0.106 gfs VDS =-5 V, ID =-4.0A VSD IS = -1.6 A, VGS = 0 V Total Gate Charge Qg 7 nC Qgs Gate-Drain Charge Qgd 1.5 Input Capacitance Ciss 1225 Output Capacitance Coss Reverse Transfer Capacitance Crss 130 td(on) 13 20 15 25 50 70 19 35 tr td(off) Turn-Off Time tf * Pulse test: PW 300 ìs duty cycle Marking Marking E5 www.kexin.com.cn 2%. VDD = -6V , RL =6 , ID = -1.0A , VGEN =-4.5V , RG = 6 V 15 Gate-Source Charge VDS = -6 V, VGS = 0, f = 1 MHz A S -1.2 9 VDS = -6V ,VGS = -4.5 V , ID= -4.0A nA A VGS =-4.5V, ID = -4.0A Diode Forward Voltage * Unit -0.45 8V Forward Transconductance * Turn-On Time 2 Testconditons 1.9 pF 260 ns