Transistors IC SMD Type N-Channel 30-V (D-S) MOSFET KI2306DS SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 1 0.55 +0.1 1.3-0.1 +0.1 2.4-0.1 100% Rg Tested 0.4 3 TrenchFET Power MOSFET 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 1. Gate 2.Emitter 2. Source 3. Drain 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-source voltage VDS 30 V Gate-source voltage VGS Continuous drain current (TJ = 150 ) *1,2 TA=25 -TA=70 ID Pulsed drain current 20 3.5 2.8 V A IDM 16 A Continuous source current (diode conduction) *1,2 IS 1.25 A Maximum Power dissipation *1,2 -- PD 1.25 0.8 W Tj,Tstg -55 to +150 TA=25 TA=70 Operating junction and storage temperature range Maximum Junction to Ambienta t 5 sec Steady State RthJA 100 130 /W *1 Surface Mounted on FR4 Board. *2 t 5 sec www.kexin.com.cn 1 Transistors IC SMD Type KI2306DS Electrical Characteristics Ta = 25 Parameter Symbol Drain-source breakdown voltage V(BR)DSS VGS = 0 V, ID = 250 ìA Gate threshold voltage VGS(th) Gate-body leakage IGSS Zero gate voltage drain current IDSS On-state drain current ID(on) Drain-source on-state resistance rDS(on) VDS = VGS, ID = 250 ìA VDS = 0 V, VGS = Min Typ Max 30 Unit V 1 20 V 100 VDS = 30V, VGS = 0 V 0.5 VDS =30V, VGS = 0 V, TJ = 55 10 VDS 4.5 V, VGS = 10 V 6 VDS 4.5 V, VGS = 4.5 V 4 nA ìA A VGS = 10 V, ID = 3.5 A 0.046 0.057 VGS =4.5 V, ID =2.8 A 0.070 0.094 Ù Forward transconductance gfs VDS =4.5 V, ID = 3.5 A 6.9 Diode forward voltage VSD IS = 1.25 A, VGS = 0 V 0.8 1.2 V gate charge * Qg VDS = 15V ,VGS =5V , ID= 3.5 A 4.2 7 nC Total gate charge * Qgt 8.5 15 Gate-source charge * Qgs Gate-drain charge * Qgd Gate Resistance Rg Input capacitance * Ciss Output capacitance * Coss Reverse transfer capacitance * Crss Turn-on time 300 ìs duty cycle Marking Marking www.kexin.com.cn A6 2%. nC 1.9 1.35 0.5 2.4 Ù 555 VDS = 15V ,VGS = 0 , f = 1 MHz pF 120 60 9 20 tr 7.5 18 17 35 5.2 12 tf * Pulse test: PW VDS = 15V ,VGS = 10 V , ID= 3.5 A S td(on) td(off) Turn-off time 2 Testconditons VDD = 15V , RL = 15Ù , ID = 1A , VGEN =-10V , RG = 6Ù ns