KEXIN KI2301BDS

Transistors
SMD Type
P-Channel 2.5-V (G-S) MOSFET
KI2301BDS
SOT-23
Unit: mm
+0.1
2.9-0.1
+0.1
0.4-0.1
1
RoH Lead (Pb)-Free Version is RoHS Compliant.
0.55
Features
+0.1
1.3-0.1
+0.1
2.4-0.1
0.4
3
2
+0.1
0.95-0.1
+0.1
1.9-0.1
0-0.1
+0.1
0.38-0.1
+0.1
0.97-0.1
+0.05
0.1-0.01
1.Base
1.
Gate
2.Emitter
2.
Source
3.
Drain
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
5 sec
Steady State
Unit
Drain-Source Voltage
VDS
-20
V
Gate-Source Voltage
VGS
8
V
Continuous Drain Current (TJ=150 ) *2 TA=25
------------------------------------------------TA=70
ID
Pulsed Drain Current *1
IDM
-2.4
-1.9
-2.2
-1.8
A
-10
A
Continuous Source Current (diode conduction) *2
IS
-0.72
-0.6
A
Power Dissipation *2
TA=25
-------------------------------------------------TA=70
PD
0.9
0.57
0.7
0.45
W
Jumction Temperature
Tj
150
Storage Temperature
Tstg
-55 to +150
* 1. Pulse width limited by maximum junction temperature.
* 2. Surface Mounted on FR4 Board, t
5 sec.
Thermal Resistance Ratings Ta = 25
Parameter
Symbol
Maximum Junction-to-Ambient *1
RthJA
Maximum Junction-to-Ambient *2
* 1. Surface Mounted on FR4 Board, t
Typical
Maximum
120
145
140
175
Unit
/W
5 sec.
* 2. Surface Mounted on FR4 Board.
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1
Transistors
SMD Type
KI2301BDS
Electrical Characteristics Ta = 25
Parameter
Symbol
Drain-Source Breakdown Voltage
Gate Threshold Voltage
VGS(th)
Gate-Body Leakage
IGSS
Zero Gate Voltage Drain Current
IDSS
On-State Drain Current
ID(on)
Drain-Source On-State Resistance *
rDS(on)
VDS = VGS, ID = -250 ìA
VDS = 0 V, VGS =
Min
Typ
Max
-20
-0.95
8V
100
VDS = -20 V, VGS = 0 V
-1
VDS = -20 V, VGS = 0 V, TJ = 55
-10
VDS
-5 V, VGS = -4.5 V
-6
VDS
-5 V, VGS = -2.5 V
-3
VGS = -4.5 V, ID = -2.8 A
0.08
0.1
0.15
VGS = -2.5 V, ID = -2.0 A
0.11
VDS = -5 V, ID = -2.8 A
6.5
Diode Forward Voltage *
VSD
IS = -0.75 A, VGS = 0 V
-0.8
-1.2
4.5
10
Total Gate Charge
Qg
Qgs
Gate-Drain Charge
Qgd
VDS = -6V ,VGS = -4.5 V , ID= -2.8 A
1.1
375
Ciss
Coss
Reverse Transfer Capacitance
Crss
65
td(on)
20
30
tr
40
60
30
45
20
30
tf
* Pulse test: PW
300 ìs duty cycle
Marking
Marking
L1
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2%.
V
nC
0.7
Input Capacitance
Turn-Off Time
A
S
Output Capacitance
td(off)
nA
A
gfs
Gate-Source Charge
Unit
V
-0.45
Forward Transconductance *
Turn-On Time
2
Testconditons
V(BR)DSS VGS = 0 V, ID = -250 ìA
VDS = -6V ,VGS = 0 , f = 1 MHz
VDD = -6V , RL = 6Ù ,
ID = -1A , VGEN =- 4.5V , RG = 6Ù
pF
95
ns