Transistors IC SMD Type P-Channel 20-V (D-S) MOSFET KI2351DS SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 1 100 % Rg tested 0.55 PWM Optimized +0.1 1.3-0.1 +0.1 2.4-0.1 TrenchFET Power MOSFET 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 1. Gate 2.Emitter 2. Source 3. Drain 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol 5 sec Unit Drain-Source Voltage VDS -20 V Gate-Source Voltage VGS 12 V Continuous Drain Current(TJ=150 ) TC=25 ---------------------------------------------- --TC=70 ID -2.8 -2.4 A Continuous Drain Current(TJ=150 ) *1,2 TA=25 -----------------------------------------------TA=70 ID -2.2 -1.8 A Pulsed Drain Current IDM -10 Continuous Source Drain Diode Current TC=25 IS -2 A -0.91 Continuous Source Drain Diode Current *1,2 TA=25 Power Dissipation --------------------------------------------- -- Tc=25 -Tc=70 PD 2.1 1.5 W Power Dissipation *1,2 --------------------------------------------- - TA=25 ---TA=70 PD 1.0 0.7 W Jumction Temperature Tj 150 Storage Temperature Tstg -55 to +150 *1Surface mounted on 1" x 1" FR4 Board. *2 t = 10 sec Thermal Resistance Ratings Ta = 25 Symbol Typical Maximum Maximum Junction-to-Ambient * Parameter t 5 sec RthJA 90 115 Maximum Junction-to-Foot (Drain) Steady State RthJF 60 75 Unit /W * Surface Mounted on 1" X 1" FR4 Board. www.kexin.com.cn 1 Transistors IC SMD Type KI2351DS Electrical Characteristics Ta = 25 Parameter Symbol Drain-Source Breakdown Voltage VDS VDS Temperature Coefficient VDS/TJ VGS(th) Temperature Coefficient VGS(th)/TJ Gate Threshold Voltage VGS(th) Gate-Body Leakage IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Current ID(on) Drain-Source On-State Resistance * rDS(on) Forward Transconductance * gfs Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg Turn-On Delay Time Rise Time Turn-Off Delay Time 2 -10 VDS -10 -5V, VGS = -4.5V 0.092 0.115 VGS = -2.5V, ID = -1.8 A 0.164 0.205 VDS =-10 V, ID =-2.4A 5.5 VDS = -10 V, VGS = 0, f = 1 MHz 80 VDS = -10 V, VGS = -5.0 V, ID = -2.4 A 3.4 5.1 3.2 5 pF 55 VDS = -10V ,VGS = -4.5 V , ID= -2.4A 1.4 48 16 24 Body Diode Reverse Recovery Charge Qrr Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb nC nC 0.5 32 trr A S 45 VSD nA 250 VDD = -10V , RL =5.26 , ID = -1.9A , VGEN =-4.5V , RG = 1 Body Diode Reverse Recovery Time V A VGS =-4.5V, ID = -2.4A 14 Body Diode Voltage www.kexin.com.cn VDS = -20 V, VGS = 0 V, TJ = 55 9 ISM G1 100 -1 30 Pulse Diode Forward Current* Marking 12 V VDS =-20V, VGS = 0 V tr tf Marking -1.5 td(on) IS 2%. -0.6 13 Continuous Source-Drain Diode Current s duty cycle mV/ 2.1 VDS = VGS, ID = -250 A Unit V 8.5 td(off) 300 Max -16.7 A VDS = 0 V, VGS = Typ -20 VGS = 0 V, ID =-250 A ID = -250 Min f = 1 MHz Fall Time * Pulse test: PW Testconditons -2 TC = 25 ns A -10 IS = -2.0 A IF = -2.0 A, di/dt = 100 A/ s, TJ = 25 -0.8 -1.2 V 17 26 ns 5 8 nC 14 3 ns