Transistors IC SMD Type P-Channel 40-V (D-S) MOSFET KI2319DS SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 1 0.55 +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 TrenchFET Power MOSFET 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 1. Gate 2.Emitter 2. Source 3. Drain 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol 5 sec Steady State Unit Drain-Source Voltage VDS -40 V Gate-Source Voltage VGS 20 V Continuous Drain Current (TJ=150 ) * 1 TA=25 ------------------------------------------------TA=70 ID Pulsed Drain Current *2 IDM -3.0 -2.4 -2.3 -1.85 -12 A A Continuous Source Current (diode conduction) *1 IS -1.0 -0.62 A Power Dissipation *1 TA=25 -------------------------------------------------TA=70 PD 1.25 0.8 0.75 0.48 W Jumction Temperature Tj 150 Storage Temperature Tstg -55 to +150 * 1 Surface Mounted on FR4 Board.t 5 sec. *2 Pulse width limited by maximum junction temperature. Thermal Resistance Ratings Ta = 25 Parameter Symbol Maximum Junction-to-Ambient *1 RthJA Maximum Junction-to-Ambient *2 Maximum Junction-to-Foot (Drain) Steady State Steady State * 1. Surface Mounted on FR4 Board, t RthJF Typical Maximum 75 100 120 166 40 50 Unit /W 5 sec. * 2. Surface Mounted on FR4 Board. www.kexin.com.cn 1 Transistors IC SMD Type KI2319DS Electrical Characteristics Ta = 25 Parameter Symbol Drain-Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = -250 A Gate Threshold Voltage VGS(th) Gate-Body Leakage IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Current ID(on) Drain-Source On-State Resistance * rDS(on) VDS = VGS, ID = -250 ìA VDS = 0 V, VGS = Qg Gate-Source Charge Qgs -40 -3.0 100 VDS = -40 V, VGS = 0 V, TJ = 55 VDS -5 V, VGS = -10V -6 0.065 0.082 VGS = -4.5 V, ID = -2.4 A 0.10 -0.8 -1.2 17 Qgd 3.3 470 Output Capacitance Coss Crss 65 7 15 15 25 25 40 25 40 td(off) tf * Pulse test: PW 300 ìs duty cycle Marking Marking www.kexin.com.cn C9 2%. pF 85 td(on) tr VDD = -20V , RL =20 , ID = -1A , VGEN =- 4.5V , RG = 6 V nC 1.7 Ciss Turn-Off Time S 11.3 Input Capacitance Turn-On Time A 0.130 7 Gate-Drain Charge VDS = -20V ,VGS = 0 , f = 1 MHz nA A VGS = -10 V, ID = -3.0 A VDS = -20V ,VGS = -10 V , ID= -3 A Unit V -1.0 -1 IS = -1.25 A, VGS = 0 V VSD Max -10 VDS = -5 V, ID = -3.0 A Diode Forward Voltage * Typ VDS = -40 V, VGS = 0 V gfs Total Gate Charge Min 20 V Forward Transconductance * Reverse Transfer Capacitance 2 Testconditons ns