STTH110/A ® HIGH VOLTAGE ULTRAFAST RECTIFIER MAIN PRODUCT CHARACTERISTICS IF(AV) 1A VRRM 1000 V Tj (max) 175 °C VF (max) 1.42 V FEATURES AND BENEFITS ■ ■ ■ ■ ■ Low forward voltage drop High reliability High surge current capability Soft switching for reduced EMI disturbances Planar technology DO-41 STTH110 DESCRIPTION The STTH110, which is using ST ultrafast high voltage planar technology, is specially suited for free-wheeling, clamping, snubbering, demagnetization in power supplies and other power switching applications. SMA STTH110A ABSOLUTE RATINGS (limiting values) Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage 1000 V V(RMS) RMS voltage 700 V IF(AV) Average forward current A IFSM Tstg Tj Forward surge current Tl = 100°C δ =0.5 DO-41 1 Tl = 125°C δ =0.5 SMA 1 DO-41 20 SMA 18 t = 8.3 ms Storage temperature range Maximum operating junction temperature January 2003 - Ed: 1 A - 50 + 175 °C + 175 °C 1/5 STTH110/A THERMAL PARAMETERS Symbol Rth (j-l) Rth (j-a) Parameter Junction to lead L = 10 mm Junction to ambient L = 10 mm Value Unit DO-41 45 °C/W SMA 30 DO-41 110 STATIC ELECTRICAL CHARACTERISTICS Symbol Parameter IR Reverse leakage current VF Forward voltage drop Tests conditions VR = 1000V IF = 1 A Min. Max. Unit Tj = 25°C 10 µA Tj = 125°C 50 Tj = 25°C 1.7 Tj = 150°C Typ. 0.98 V 1.42 To evaluate the maximum conduction losses use the following equation : P = 1.20 x IF(AV) + 0.225 x IF2(RMS) DYNAMIC ELECTRICAL CHARACTERISTICS Symbol Tests conditions Min. Typ. Max. Unit trr Reverse recovery time IF = 0.5 A Irr = 0.25 A IR = 1A Tj = 25°C 75 ns tfr Forward recovery time IF = 1 A dIF/dt = 50 A/µs VFR = 1.1 x VFmax Tj = 25°C 300 ns 18 V VFP 2/5 Parameter Forward recovery voltage STTH110/A Fig. 1: Conduction losses versus average current. Fig. 2: Forward voltage drop versus forward current. IFM(A) P(W) 100.0 1.8 δ = 0.05 1.6 δ = 0.2 δ = 0.1 δ = 0.5 Tj=150°C (maximum values) 1.4 δ=1 1.2 10.0 Tj=150°C (typical values) 1.0 Tj=25°C (maximum values) 0.8 0.6 1.0 T 0.4 0.2 IF(AV)(A) δ=tp/T 0.0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 VFM(V) tp 0.1 1.0 1.1 1.2 Fig. 3-1: Relative variation of thermal impedance junction ambient versus pulse duration (epoxy FR4, Lleads = 10mm) (DO-41). 0.0 Zth(j-c)/Rth(j-c) 0.9 0.9 0.8 0.8 0.7 0.7 0.6 δ = 0.5 0.5 0.5 0.4 0.4 T Single pulse tp(s) 3.0 3.5 1.E+00 1.E+01 δ = 0.1 4.0 4.5 T 0.1 δ=tp/T 0.0 1.E-01 2.5 δ = 0.2 0.2 δ = 0.1 0.1 2.0 δ = 0.5 0.3 δ = 0.2 0.2 1.5 Zth(j-c)/Rth(j-c) 1.0 0.3 1.0 Fig. 3-2: Relative variation of thermal impedance junction ambient versus pulse duration (epoxy FR4) (SMA). 1.0 0.6 0.5 tp(s) Single pulse tp δ=tp/T 0.0 1.E+02 1.E+03 Fig. 4-1: Thermal resistance junction to ambient versus copper surface under each lead (epoxy printed circuit board FR4, copper thickness: 35µm) (DO-41). 1.E-01 1.E+00 1.E+01 tp 1.E+02 1.E+03 Fig. 4-2: Thermal resistance junction to ambient versus copper surface under each lead (epoxy printed circuit board FR4, copper thickness: 35µm) (SMA). Rth(j-a)(°C/W) Rth(j-a)(°C/W) 120 140 110 130 120 100 110 90 100 80 90 70 80 60 70 50 60 50 40 40 30 30 20 20 10 10 S(cm²) 0 S(cm²) 0 0 1 2 3 4 5 6 7 8 9 10 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 3/5 STTH110/A PACKAGE MECHANICAL DATA SMA DIMENSIONS REF. E1 D E A1 A2 C L b FOOTPRINT (in millimeters) 1.65 1.45 4/5 2.40 1.45 Millimeters Inches Min. Max. Min. Max. A1 1.90 2.70 0.075 0.106 A2 0.05 0.20 0.002 0.008 b 1.25 1.65 0.049 0.065 c 0.15 0.41 0.006 0.016 E 4.80 5.60 0.189 0.220 E1 3.95 4.60 0.156 0.181 D 2.25 2.95 0.089 0.116 L 0.75 1.60 0.030 0.063 STTH110/A PACKAGE MECHANICAL DATA DO-41 DIMENSIONS C A C REF. Millimeters Inches Min. Max. Min. Max. A 4.07 5.20 0.160 0.205 B 2.04 2.71 0.080 0.107 C 28 D 0.712 O /D O /D ■ O / B 1.102 0.863 0.028 0.034 Ordering code Marking Package Weight Base qty Delivery mode STTH110 STTH110 DO-41 0.34 g 2000 Ammopack STTH110A H10 SMA 0.068 g 5000 Tape & reel STTH110RL STTH110 DO-41 0.34 g 5000 Tape & reel Epoxy meets UL 94,V0 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics © 2003 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 5/5