STMICROELECTRONICS STTH110

STTH110/A
®
HIGH VOLTAGE ULTRAFAST RECTIFIER
MAIN PRODUCT CHARACTERISTICS
IF(AV)
1A
VRRM
1000 V
Tj (max)
175 °C
VF (max)
1.42 V
FEATURES AND BENEFITS
■
■
■
■
■
Low forward voltage drop
High reliability
High surge current capability
Soft switching for reduced EMI disturbances
Planar technology
DO-41
STTH110
DESCRIPTION
The STTH110, which is using ST ultrafast high
voltage planar technology, is specially suited for
free-wheeling, clamping, snubbering, demagnetization in power supplies and other power switching
applications.
SMA
STTH110A
ABSOLUTE RATINGS (limiting values)
Symbol
Parameter
Value
Unit
VRRM
Repetitive peak reverse voltage
1000
V
V(RMS)
RMS voltage
700
V
IF(AV)
Average forward current
A
IFSM
Tstg
Tj
Forward surge current
Tl = 100°C
δ =0.5
DO-41
1
Tl = 125°C
δ =0.5
SMA
1
DO-41
20
SMA
18
t = 8.3 ms
Storage temperature range
Maximum operating junction temperature
January 2003 - Ed: 1
A
- 50 + 175
°C
+ 175
°C
1/5
STTH110/A
THERMAL PARAMETERS
Symbol
Rth (j-l)
Rth (j-a)
Parameter
Junction to lead
L = 10 mm
Junction to ambient
L = 10 mm
Value
Unit
DO-41
45
°C/W
SMA
30
DO-41
110
STATIC ELECTRICAL CHARACTERISTICS
Symbol
Parameter
IR
Reverse leakage current
VF
Forward voltage drop
Tests conditions
VR = 1000V
IF = 1 A
Min.
Max.
Unit
Tj = 25°C
10
µA
Tj = 125°C
50
Tj = 25°C
1.7
Tj = 150°C
Typ.
0.98
V
1.42
To evaluate the maximum conduction losses use the following equation :
P = 1.20 x IF(AV) + 0.225 x IF2(RMS)
DYNAMIC ELECTRICAL CHARACTERISTICS
Symbol
Tests conditions
Min.
Typ.
Max.
Unit
trr
Reverse recovery time
IF = 0.5 A
Irr = 0.25 A IR = 1A
Tj = 25°C
75
ns
tfr
Forward recovery time
IF = 1 A
dIF/dt = 50 A/µs
VFR = 1.1 x VFmax
Tj = 25°C
300
ns
18
V
VFP
2/5
Parameter
Forward recovery voltage
STTH110/A
Fig. 1: Conduction losses versus average current.
Fig. 2: Forward voltage drop versus forward
current.
IFM(A)
P(W)
100.0
1.8
δ = 0.05
1.6
δ = 0.2
δ = 0.1
δ = 0.5
Tj=150°C
(maximum values)
1.4
δ=1
1.2
10.0
Tj=150°C
(typical values)
1.0
Tj=25°C
(maximum values)
0.8
0.6
1.0
T
0.4
0.2
IF(AV)(A)
δ=tp/T
0.0
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
VFM(V)
tp
0.1
1.0
1.1
1.2
Fig. 3-1: Relative variation of thermal impedance
junction ambient versus pulse duration (epoxy
FR4, Lleads = 10mm) (DO-41).
0.0
Zth(j-c)/Rth(j-c)
0.9
0.9
0.8
0.8
0.7
0.7
0.6
δ = 0.5
0.5
0.5
0.4
0.4
T
Single pulse
tp(s)
3.0
3.5
1.E+00
1.E+01
δ = 0.1
4.0
4.5
T
0.1
δ=tp/T
0.0
1.E-01
2.5
δ = 0.2
0.2
δ = 0.1
0.1
2.0
δ = 0.5
0.3
δ = 0.2
0.2
1.5
Zth(j-c)/Rth(j-c)
1.0
0.3
1.0
Fig. 3-2: Relative variation of thermal impedance
junction ambient versus pulse duration (epoxy
FR4) (SMA).
1.0
0.6
0.5
tp(s)
Single pulse
tp
δ=tp/T
0.0
1.E+02
1.E+03
Fig. 4-1: Thermal resistance junction to ambient
versus copper surface under each lead (epoxy
printed circuit board FR4, copper thickness: 35µm)
(DO-41).
1.E-01
1.E+00
1.E+01
tp
1.E+02
1.E+03
Fig. 4-2: Thermal resistance junction to ambient
versus copper surface under each lead (epoxy
printed circuit board FR4, copper thickness: 35µm)
(SMA).
Rth(j-a)(°C/W)
Rth(j-a)(°C/W)
120
140
110
130
120
100
110
90
100
80
90
70
80
60
70
50
60
50
40
40
30
30
20
20
10
10
S(cm²)
0
S(cm²)
0
0
1
2
3
4
5
6
7
8
9
10
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
3/5
STTH110/A
PACKAGE MECHANICAL DATA
SMA
DIMENSIONS
REF.
E1
D
E
A1
A2
C
L
b
FOOTPRINT (in millimeters)
1.65
1.45
4/5
2.40
1.45
Millimeters
Inches
Min.
Max.
Min.
Max.
A1
1.90
2.70
0.075
0.106
A2
0.05
0.20
0.002
0.008
b
1.25
1.65
0.049
0.065
c
0.15
0.41
0.006
0.016
E
4.80
5.60
0.189
0.220
E1
3.95
4.60
0.156
0.181
D
2.25
2.95
0.089
0.116
L
0.75
1.60
0.030
0.063
STTH110/A
PACKAGE MECHANICAL DATA
DO-41
DIMENSIONS
C
A
C
REF.
Millimeters
Inches
Min.
Max.
Min.
Max.
A
4.07
5.20
0.160
0.205
B
2.04
2.71
0.080
0.107
C
28
D
0.712
O
/D
O
/D
■
O
/ B
1.102
0.863
0.028
0.034
Ordering code
Marking
Package
Weight
Base qty
Delivery mode
STTH110
STTH110
DO-41
0.34 g
2000
Ammopack
STTH110A
H10
SMA
0.068 g
5000
Tape & reel
STTH110RL
STTH110
DO-41
0.34 g
5000
Tape & reel
Epoxy meets UL 94,V0
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use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied.
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approval of STMicroelectronics.
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© 2003 STMicroelectronics - Printed in Italy - All rights reserved.
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