110PT Series

110PT Series
SEMICONDUCTOR
RoHS
RoHS
Nell High Power Products
Phase Control Thyristors
(Stud version, 110A)
FEATURES
High current and high surge capability
Hermetic ceramic housing
Planar SCR chips
Compliant to RoHS
Designed and qualified for multiple level
TYPICAL APPLICATIONS
DC motor control and drives
TO-209AC (TO-94)
Battery chargers
AC controllers
Controlled DC power supplies
PRODUCT SUMMARY
I T(AV)
110A
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
I T(AV)
VALUE
UNITS
90°C
110
A
I T(RMS)
90°C
173
50 Hz
2250
60 Hz
2360
50 Hz
25.3
60 Hz
23.1
CHARACTERISTICS
I TSM /l FSM
l 2t
I 2√t
A
kA 2 s
253
kA2√s
400 to 1600
V
V DRM /V RRM
Range
tq
typical
110
µS
TJ
Range
-40 to 150
°C
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE
NUMBER
110PT..S
VOLTAGE
CODE
VRRM /V DRM , MAXIMUM REPETITIVE
PEAK REVERSE VOLTAGE
V
VRSM /V DSM , MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
04
400
500
08
800
900
12
1200
1300
14
1400
1500
16
1600
1700
18
1800
1900
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Page 1 of 8
IRRM /I DRM
AT 150 °C
mA
20
110PT Series
SEMICONDUCTOR
RoHS
RoHS
Nell High Power Products
FORWARD CONDUCTION
PARAMETER
SYMBOL
Maximum average on-state current
at case temperature
I T(AV)
I T(RMS)
Maximum RMS on-state current
TEST CONDITIONS
I TSM
non-reptitive surge current
t = 8.3 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
I 2t
Maximum
I 2√t
for fusing
A
90
ºC
173
No voltage
reapplied
2250
100%V RRM
reapplied
1890
No voltage
reapplied
2360
Sine half wave,
1980
initial T J = T J maximum
25.3
23.1
100%V RRM
reapplied
17.9
t = 0.1 to 10 ms, no voltage reapplied
253
t = 10 ms
t = 8.3 ms
l 2√t
110
180° conduction, half sine wave, 50Hz, T C =90°C
t = 10 ms
Maximum l 2 t for fusing
UNIT
180° conduction, half sine wave, 50Hz
t = 10 ms
Maximum peak, one-cycle, on-state
VALUES
V T(TO)1
(16.7% x π x I T(AV) ) < I < π x I T(AV) , T J = T J maximum
0.80
High level value of threshold voltage
V T(TO)2
I > π x I T(AV) , T J = T J maximum
1.05
kA 2√s
V
Low level value of on-state slope resistance
r t1
(16.7% x π x I T(AV) ) < I < π x I T(AV) , T J = T J maximum
2.10
High level value of on-state slope resistance
r t2
I > π x I T(AV) , T J = T J maximum
1.75
V TM
kA 2 s
16.3
Low level value of threshold voltage
Maximum on-state voltage drop
A
mΩ
I TM = 350A, T J = 25°C, 180°C conduction
1.6
Maximum holding current
lH
Anode supply = 6V, resistive load T J = 25°C
150
Maximum latching current
lL
Anode supply = 6V, resistive load T J = 25°C
400
V
mA
BLOCKING
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum peak reverse and
off-state leakage current
l RRM
l DRM
T J = 150°C
Maximum critical rate of rise of
off-state voltage
dV/dt
T J = T J maximum,
exponential to 67% rated V DRM
VALUES
UNITS
20
mA
1000
V/μs
Voltage code
UNITS
SWITCHING
PARAMETER
Typical delay time
Typical turn-off time
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SYMBOL
TEST CONDITIONS
td
Gate current 1A, dl g /dt = 1A/μs
V d = 67% V DRM, T J = 25°C
tq
l TM = 50A, T J = T J maximum, dl/dt = -5 A/μs
V R = 50V, dV/dt = 20 V/μs, gate 0V, 25Ω
Page 2 of 8
1
μs
110
110PT Series
SEMICONDUCTOR
RoHS
RoHS
Nell High Power Products
TRIGGERING
PARAMETER
Maximum peak gate power
Maximum average gate power
SYMBOL
Max.
t p ≤ 5ms, T J = T J maximum
12
P G(AV)
f = 50Hz, T J = T J maximum
3
l GM
Maximum peak positive
gate voltage
+V GM
Maximum peak negative
gate voltage
-V GM
t p ≤ 5ms, T J = T J maximum
UNITS
W
A
3
20
10
V
V GT
T J = -40°C
1.60
-
T J = 25°C
1.0
1.5
0.7
-
140
-
T J = 25°C
60
120
T J = 150°C
30
-
Anode supply = 12V,
resistive load;
R L = 30Ω
T J = 150°C
T J = -40°C
Maximum required DC
gate current to trigger
VALUES
TYP.
P GM
Maximum peak positive
gate current
Maximum required DC
gate voltage to trigger
TEST CONDITIONS
l GT
Maximum gate voltage
that will not trigger
V GD
Maximum gate current
that will not trigger
l GD
Maximum rate of rise of
turmed-on current
dl/dt
0.25
mA
V
T J = T J maximum, 66.7% V DRM applied
T J = 25°C, l GM = 1.5A, t r ≤ 0.5 µs
10
mA
150
A/µs
VALUES
UNITS
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum junction operating
temperature range
TJ
Maximum junction operating
temperature range
T stg
TEST CONDITIONS
-40 to 150
°C
-40 to 150
Maximum thermal resistance,
junction to case per junction
R thJC
DC operation
Maximum thermal resistance,
case to heatsink per module
R thCS
Mounting surface, smooth, flat and greased
0.25
°C/W
0.1
Non-lubricated threads
15.5
(137)
Lubricated threads
14
(120)
Mounting torque, ±10%
N.m
(lbf . in)
115
g
4.06
oz.
Approximate weight
Case style
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See dimensions ( at the end of datasheet )
Page 3 of 8
TO-209AC (TO-94)
110PT Series
SEMICONDUCTOR
RoHS
RoHS
Nell High Power Products
∆RthJC CONDUCTION
CONDUCTION ANGLE
SINUSOIDAL CONDUCTION
180°
0.043
0.031
120°
90°
0.052
0.066
0.096
0.053
0.071
0.101
0.167
0.169
60°
30°
TEST CONDUCTIONS
RECTANGULAR CONDUCTION
UNITS
T J = T J maximum
K/W
Note
• The table above shows the increment of thermal resistance RthJC when devices
operate at different conduction angles than DC
ORDERING INFORMATION TABLE
Device code
110
PT
16
S
M
1
2
3
4
5
1
- Maximum average on-state current, I T(AV)
2
- For phase control thyristors
3
- Voltage code, V DRM /V RRM = code x 100
4
- Stud version
- None for standard device, ½” - 20UNF
5
″M ″ for metric device, M12 x 1.5
″S″ for short flexible lead
Fig.1 Current ratings characteristics
Fig.2 Current ratings characteristics
150
150
R thJC (DC) = 0.25 K/W
140
140
Ø
Conduction angle
130
120
110
100
90
80
30°C
0
20
40
60°C
60
90°C
120°C
100
Conduction period
120
110
100
DC
90
30°C
120°C
60°C
180°C
90°C
120
Average on-state current (A)
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Ø
130
80
180°C
80
Maximum allowable case
temperature (°C)
Maximum allowable case
temperature (°C)
R thJC (DC) = 0.25 K/W
70
0
20
40
60
80
100 120 140 160
Average on-state current (A)
Page 4 of 8
180
110PT Series
SEMICONDUCTOR
RoHS
RoHS
Nell High Power Products
Fig.3 On-State power loss characteristics
160
Maximum average on-state
power loss (W)
40
Conduction angle
20
T J =150 ºC
0
0
20
40
60
80
100
80
1.5
60
/W
K/ W
2 K/
40
W
4 K /W
5 K /W
20
0
120
W
R
Ø
1K
100
K/
-∆
60
8
W
80
0.
K/
RMS limit
30°C
K/
W
120
3
60°C
100
6
0.
90°C
0.
=
120°C
120
140
A
180°C
hS
140
Rt
Maximum average on-state
power loss (W)
160
0
20
40
60
80
100
120
140
120
140
Maximum allowable ambient
temperature (°C)
Average on-state current (A)
Fig.4 On-State power loss characteristics
220
200
Maximum average on-state
power loss (W)
Maximum average on-state
power loss (W)
220
DC
180
180°C
160
120°C
90°C
140
60°C
120
RMS limit
30°C
100
80
60
Ø
40
Conduction period
20
T J =150 ºC
0
0
20
40
60
80
200
th
140
0 .6
120
0 .8
100
1K
80
1.5
=
0.
3
K/
W
K/
-∆
R
W
K /W
/W
K/ W
2 K /W
60
40
4 K /W
20
5 K /W
0
20
40
60
80
100
Maximum allowable ambient
temperature (°C)
Average on-state current (A)
Fig.5 Maximum non-repetitive surge current
Fig.6 Maximum non-repetitive surge current
2500
2000
Maximum Non Repetitive Surge Current
At Any Rated Load Condition And With
Rated V RRM Applied Following Surge.
Initial T J = 150°C
1800
Peak half sine wave On-state
current (A)
Peak half sine wave On-state
current (A)
SA
160
0
100 120 140 160 180
R
180
@60 Hz 0.0083 s
@50 Hz 0.0100 s
1600
1400
1200
1000
800
1
10
100
Number of equal amplitude half (A)
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Versus Pulse Train Duration. Control
Of Conduction May Not Be Maintained
Initial T J = 150°C
2000
No Voltage Reapplied @ 50Hz
Reted VRRM Reapplied @ 50Hz
1500
1000
500
0.01
0.1
1
Average on-state current (A)
Page 5 of 8
10
110PT Series
SEMICONDUCTOR
RoHS
RoHS
Nell High Power Products
Fig.7 On-state voltage drop characteristics
lnstantaneous on-state current (A)
10000
T J =25 ºC
1000
T J =150 ºC
100
10
1
0
1
3
2
5
4
lnstantaneous on-state voltage (A)
Fig.8 Thermal lmpedance Z thJC characteristic
Transient thermal lmpedance
, Z thJC (K/W)
1
Steady state value
R thJC = 0.25 K/W
(DC operation)
0.1
0.01
0.001
0.0001
0.001
0.01
0.1
10
1
Square wave pulse duration (s)
100
10
Rectangular gate pulse
a) Recommended load line for
rated di/dt : 20V, 30Ω
t r ≤ 0.5µs, t p ≥ 6µs
b) Recommended load line for
≤ 30% rated di/dt : 15V, 40Ω
t r ≤ 1µs, t p ≥ 6µs
(2) P GM = 30W, t p = 2ms
(3) P GM = 60W, t p = 1ms
(a)
(4) P GM = 200W, t p = 300µs
(b)
T J =40 ºC
V GD
(1) P GM = 12W, t p = 5ms
T J =25 ºC
1
T J =150 ºC
lnstantaneous gate voltage (V)
Fig.9 Gate characteristics
(1)
(2)
(3)
(4)
Frequency limited by P G(AV)
0.1
0.001
0.01
0.1
1
10
lnstantaneous gate voltage (A)
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Page 6 of 8
100
1000
110PT Series
SEMICONDUCTOR
RoHS
RoHS
Nell High Power Products
www.nellsemi.com
200 (7.87) Min
160 (6.30) Min
Ceramic Housing
Page 7 of 8
110PT Series
SEMICONDUCTOR
RoHS
RoHS
Nell High Power Products
www.nellsemi.com
130 (5.12) Min
100 (3.94) Min
Ceramic housing (for short flexible lead)
Page 8 of 8