RoHS NKT350/NKH350 Series RoHS SEMICONDUCTOR Nell High Power Products Thyristor/Diode and Thyristor/Thyristor, 350A ( MAGN-A-PAK Power Modules) 2 G1 K1 3 MAGN-A-PAK 4-Ø6.30 Thru. 23.0 1 38.0±0.5 53±0 36.0 K2 G2 25.0 40.0 80.0±0.5 6.0 92.0 115±3.0 FEATURES • High voltage 3- M8 Screws • Electrically isolated by DBC ceramic (AI 2O3) 60.0±3.0 37.0±1.0 8.0 • Glass passivated chips 25.0.±1.0 51.0±1.0 • High surge capability 47.0±1.0 • Industrial standard package 39.0±1.0 2.8 x 0.8±0.1 (G/K Pins) • 3500 V RMS isolating voltage • Modules uses high voltage power thyristor/diodes in two basic configurations • Simple mounting All dimensions in millimeters • UL approved file E320098 • Compliant to RoHS • Designed and qualified for multiple level APPLICATIONS K2 G2 • DC motor control and drives • Battery charges 3 ~ + 2 - 1 • Welders G1 K1 NKT • Power converters • Lighting control • Heat and temperature control • Ups 3 ~ + 2 - 1 G1 K1 NKH PRODUCT SUMMARY IT(AV) 350 A MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUE UNITS 350 A IT(AV) 85 °C IT(RMS) 85 °C 550 50 Hz 9300 60 Hz 9765 50 Hz 432 60 Hz 394 ITSM I2t I2√t 4325 A kA2s kA2√s VDRM / VRRM Range 400 to 1600 V TJ Range -40 to 125 °C www.nellsemi.com Page 1 of 4 RoHS NKT350/NKH350 Series RoHS SEMICONDUCTOR Nell High Power Products ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER VOLTAGE CODE VRRM /V DRM , MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE V VRSM /V DSM , MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V 04 400 500 NKT350 NKH350 08 800 900 10 1000 1100 12 1200 1300 14 1400 1500 16 1600 1700 IRRM /I DRM AT 125 °C mA 40 FORWARD CONDUCTION PARAMETER SYMBOL TEST CONDITIONS Maximum average on-state current at case temperature IT(AV) 180° conduction, half sine wave ,50Hz Maximum RMS on-state current lT(RMS) 180° conduction, half sine wave ,50Hz ,TC = 85°C Maximum peak, one-cycle, on-state non-repetitive surge current ITSM t = 10 ms Maximum I 2t for fusing I 2t No voltage reapplied t = 8.3 ms t = 10 ms t = 8.3 ms A 85 °C 550 100%V RRM reapplied 432 394 302 kA2s 275 2 I √t t = 0.1 ms to 10 ms, no voltage reapplied Maximum on-state voltage drop VTM lTM= 900A, TJ = 25 °C, 180° conduction 1.7 Maximum forward voltage drop VFM IFM= 900A, TJ = 25 °C, 180° conduction 1.4 IH Anode supply = 12 V initial I T = 1 A, TJ = 25 °C 200 IL Anode supply = 12 V resistive load = 1 Ω Gate pulse: 10 V, 100 μs, TJ = 25 °C 400 Maximum latching current A 9765 Sine half wave, initial TJ = TJ maximum Maximum I 2√t for fusing Maximum holding current UNITS 350 9300 t = 10 ms t = 8.3 ms VALUES 4325 kA2√s V mA SWITCHING PARAMETER SYMBOL TEST CONDITIONS VALUES T J = 25°C, gate current = 1A, dI g /dt= 1 A/µs 1.0 2.0 Typical delay time td Typical rise time tr V d = 0.67% V DRM Typical turn-off time tq I TM = 300A, dI/dt = 15 A/µs, T J = T J maximum V R = 50V, dV/dt = 20 V/dt, gate 0V, 100Ω UNITS µs 200 to 350 BLOCKING PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS 40 mA 50 Hz, circuit to base, all terminals shorted, 25°C, 1s 3500 V T J = T J maximum, exponential to 67% rated V DRM 1000 V/μs Maximum peak reverse and off-state leakage current l RRM , l DRM T J = 125°C RMS isolation Voltage V ISO Critical rate of rise of off-state voltage dV/dt www.nellsemi.com Page 2 of 4 RoHS NKT350/NKH350 Series RoHS SEMICONDUCTOR Nell High Power Products TRIGGERING PARAMETER SYMBOL Maximum peak gate power Maximum average gate power TEST CONDITIONS VALUES PGM t p ≤ 5 ms, TJ = TJ maximum 10 PG(AV) f = 50 Hz, TJ = TJ maximum 2 IGM Maximum peak gate current Maximum peak negative gate voltage 3 t p ≤ 5 ms, TJ = TJ maximum - VGM UNITS W A 5 V Maximum required DC gate voltage to trigger VGT 2 Anode supply = 12 V, resistive load; Ra = 1 Ω TJ = 25 °C Maximum required DC I GT gate current to trigger Maximum gate voltage that will not trigger VGD Maximum gate current that will not trigger I GD Maximum rate of rise of turned-on current dI/dt 50 to 200 0.25 mA V TJ = TJ maximum, 67% V DRM applied T J = T J maximum, I TM = 400A rated V DRM applied 10 mA 500 A/μs VALUES UNITS - 40 to 125 °C THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS junction operating and storage temperature range TJ, Tstg Maximum thermal resistance, junction to case per junction RthJC DC operation 0.11 Typical thermal resistance, case to heatsink per module RthCS Mounting surface, smooth , flat and greased 0.02 °C/W A mounting compound is recommended and the torque should be rechecked after a period of about 3 hours to allow for the spread of the compound. MAP to heatsink, M6 Mounting torque ± 10 % busbar to MAP, M8 Approximate weight Case style 4 to 6 N.m 900 g 31.7 oz. MAGN-A-PAK ORDERING INFORMATION TABLE Device code www.nellsemi.com NKT 350 1 2 / 16 3 1 - Module type: NKT for (Thyristor + Thyristor) module NKH for (Thyristor + Diode) module 2 - Current rating: IT(AV) 3 - Voltage code x 100 = V RRM Page 3 of 4 RoHS NKT350/NKH350 Series RoHS SEMICONDUCTOR Nell High Power Products Fig.1 On-state current vs. voltage characteristics Fig.2 Transient thermal impedance(junction-case) 0.12 Transient thermal impedance (°C/W) 4 On-state peak voltage (V) 3.5 T J = 125°C 3 2.5 2 1.5 1 0.5 100 1000 10000 0.10 0.08 0.06 0.04 0.02 0.00 0.001 0.01 0.1 On-state current (A) Time (s) Fig.3 Power consumption vs. average current Fig.4 Case temperature vs. on-state average current 140 500 180 0 120° 180° 90° Conduction Angle 400 60° 30° 300 200 Case temperature (°C) Maximum power consumption (W) 600 100 120 180 0 100 Conduction Angle 80 60 180° 40 30° 20 60° 90° 120° 0 0 0 70 140 210 280 0 350 On-state average current (A) 90 180 270 360 450 540 On-state average current (A) 2 Fig.5 On-state surge current vs cycles Fig.6 I t characteristics 10 500 9 8 400 A S (1000A S) 2 7 6 5 300 2 On-state surge current (KA) 10 1 4 200 3 2 1 10 Cycles @50Hz www.nellsemi.com 100 100 Page 4 of 4 1 Time (ms) 10