CM300E3Y6-24NFH Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com Chopper IGBTMOD™ NFH-Series Module 300 Amperes/1200 Volts A D F G2 B M F K L G E2 E H N P E1 C2E1 E2 G1 C1 H G J Q S R (4 PLACES) T T U Description: Powerex IGBTMOD™ Modules are designed for use high frequency applications; 30 kHz for hard switching applications and 60 to 70 kHz for soft switching applications. Each module consists of two IGBT Transistors in a half-bridge configuration with each transistor having a reverseconnected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. V NUTS (3 PLACES) W W Q X Q X W Y X Z C LABEL AA G2 E2 Tr2 E2 C2E1 Di1 C1 Di2 E1 (TH2) NTC G1 (TH1) Outline Drawing and Circuit Diagram Dimensions Inches A 4.25 2.44 B C Millimeters Dimensions Inches Millimeters 108.0 P 0.79 20.0 62.0 Q 1.18+0.4/-0.02 30.0+1.0/-0.5 R 0.28 0.26 Dia. 7.0 Dia. 6.5 D 3.66±0.01 93.0±0.25 S 0.85 21.5 E 1.89±0.01 48.0±0.25 T 0.98 25.0 0.94 24.0 M6 Metric M6 F 0.29 7.5 U G 0.24 6.0 V J 0.689 17.5 V 0.16 4.0 H 0.59 15.0 W 0.71 18.0 K 0.244 6.2 X 0.55 14.0 L 0.16 4.0 Y 0.02 M 0.56 14.2 Z 0.33 8.5 N 1.18 30.0 AA 0.87 22.2 0.5 Features: £ Low ESW(off) £ Discrete Super-Fast Recovery Free-Wheel Diode £ Isolated Baseplate for Easy Heat Sinking Applications: £ Power Supplies £ Induction Heating £Welders Ordering Information: Example: Select the complete module number you desire from the table below -i.e. CM300E3Y6-24NFH is a 1200V (VCES), 300 Ampere Chopper IGBTMOD™ Power Module. Type Current Rating Amperes VCES Volts (x 50) CM300 24 12/11 Rev. 0 1 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com CM300E3Y6-24NFH Chopper IGBTMOD™ NFH-Series Module 300 Amperes/1200 Volts Absolute Maximum Ratings, Tj = 25°C unless otherwise specified Inverter IGBT/FWDi Part Characteristics SymbolRatingUnits Collector-Emitter Voltage (VGE = 0V) VCES 1200Volts Gate-Emitter Voltage (VCE = 0V) VGES ±20Volts Collector Current (Operation, TC = 25°C)*3IC Collector Current (Pulse, Repetitive)*2I 300Amperes CRM 600Amperes Total Power Dissipation (TC = 25°C)*2,*3Ptot 1760Watts Emitter Current (Operation, TC = 25°C)*3 Emitter Current (Pulse, Repetitive)*2 IE*1 50Amperes IERM*1 100Amperes Clamp Diode Part Characteristics SymbolRatingUnits Repetitive Peak Reverse Voltage Forward Current (Operation, TC = VRRM 1200Volts 25°C)*3 Forward Current (Pulse, Repetitive)*2 IF 300Amperes IFRM 600Amperes Module Characteristics SymbolRatingUnits Isolation Voltage (Charged Part to Baseplate, f= 60 Hz, AC 1 Minute) VISO 2500Vrms Maximum Junction Temperature Tj(max)+150 °C Operating Junction Temperature Storage Temperature Tj(op) -40 to +150 °C Tstg -40 to +125 °C *1 Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling diode (FWDi). *2 Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed Tj(max) rating. *3 Case temperature (TC) and heatsink temperature (Ts) is measured on the surface (mounting side) of the baseplate and the heatsink side just under the chips. Refer to the figure to the right for chip location. The heatsink thermal resistance should be measured just under the chips. 0 60.1 0 0 18.4 Th 32.2 Tr2 Di2 Tr2 Di1 24.4 Di1 34.5 34.4 0 31.8 42.2 52.4 76.7 LABEL SIDE Each mark points to the center position of each chip. Tr2: IGBT Di1: ClampDi 2 Di2: FWDi Th: NTC Thermistor 12/11 Rev. 0 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com CM300E3Y6-24NFH Chopper IGBTMOD™ NFH-Series Module 300 Amperes/1200 Volts Electrical Characteristics, Tj = 25°C unless otherwise specified Inverter IGBT/FWDi Part Characteristics Symbol Test Conditions Min. Typ. Max. Units Collector-Emitter Cutoff Current ICES VCE = VCES, VGE = 0V — — 1 mA Gate-Emitter Leakage Current IGES ±VGE = VGES, VCE = 0V — — 1 µA Gate-Emitter Threshold Voltage VGE(th) IC = 30mA, VCE = 10V 4.5 6.0 7.5 Volts Collector-Emitter Saturation Voltage VCE(sat) IC = 300A, VGE = 15V, Tj = 25°C*4 — 5.0 6.5 Volts IC = 300A, VGE = 15V, Tj = 125°C*4 — 5.0 — Volts — — 47 nF — — 4.0 nF — — 0.9 nF — 1350 — nC — — 300 ns Input Capacitance Cies Output Capacitance Coes Reverse Transfer Capacitance Cres Total Gate Charge QG Turn-on Delay Time td(on) Rise Time Turn-off Delay Time Fall Time VCE = 10V, VGE = 0V VCC = 600V, IC = 300A, VGE = 15V tr VCC = 600V, IC = 300A, VGE = ±15V, — — 80 ns td(off) RG = 1.0Ω, Inductive Load — — 500 ns — — 150 ns Emitter-Collector Voltage VEC*1 tf IE = 50A, VGE = 0V*4 — 2.8 3.8 Volts Internal Lead Resistance RCC' + EE' IC = 300A, TC = 25°C, — 0.53 — mΩ Chip - Terminals Internal Gate Resistance rg External Gate Resistance RG TC = 25°C — 0.8 — Ω 1.0 — 10 Ω Clamp Diode Part Collector Cutoff Current IRRM VR = VRRM — — 1 mA Reverse Recovery Time trr VCC = 600V, IF = 300A, VGE = ±15V, — — 100 ns Reverse Recovery Charge Qrr RG = 1.0Ω, Inductive Load — 6.0 — µC Emitter-Collector Voltage VFM IF = 300A*4 — 5.5 7.0 Volts Internal Lead Resistance RCC' + EE' IF = 300A, TC = 25°C, — 0.53 — mΩ Chip - Terminals *1 Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling diode (FWDi). *4 Pulse width and repetition rate should be such as to cause negligible temperature rise. 12/11 Rev. 0 3 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com CM300E3Y6-24NFH Chopper IGBTMOD™ NFH-Series Module 300 Amperes/1200 Volts Electrical Characteristics, Tj = 25°C unless otherwise specified NTC Thermistor Part Symbol Test Conditions Min. Typ. Max. Units Zero Power Resistance Characteristics R25 TC = 25°C*3 4.85 5.00 5.15 kΩ Deviation of Resistance ∆R/R B Constant B(25/50) Power Dissipation 100°C*3 -7.3 — +7.8 % Approximate by Equation*5 — 3375 — K — — 10 mW R100 = 493Ω, TC = P25 TC = 25°C*3 Mechanical Characteristics Mounting Torque Mt Main Terminals, M6 Screw 31 35 40 in-lb Mounting Torque Ms Mounting, M6 Screw 31 35 40 in-lb — 400 — Grams On Centerline X, Y*6 -100 — +100 µm Weight m Flatness of Baseplate ec Thermal Resistance Characteristics, Tj = 25°C unless otherwise specified Thermal Resistance, Junction to Case Rth(j-c)Q Per Inverter IGBT*3 — — 0.071 K/W Thermal Resistance, Junction to Case Rth(j-c)D Per Inverter FWDi*3 — — 0.43 K/W Thermal Resistance, Junction to Case Rth(j-c)D Contact Thermal Resistance, Rth(c-s) Case to Heatsink*2 ClampDi*3 — — 0.11 K/W Thermal Grease Applied, — 0.02 — K/W Per per 1/2 Module*3,*7 *3 Case temperature (TC) is measured on the surface (mounting side) of the baseplate just under the chips. Refer to the figure to the right for chip location. R25 1 1 *5 B(25/50) = In( )/( – ) 0 R50 T25 T50 R25; Resistance at Absolute Temperature T25 [K]; T25 = 25 [°C] + 273.15 = 298.15 [K] R50; Resistance at Absolute Temperature T50 [K]; T50 = 50 [°C] + 273.15 = 323.15 [K] 18.4 *6 Baseplate (mounting side) flatness measurement points (X, Y) are shown in the figure. 0 60.1 0 Th Tr2 Di2 Tr2 Di1 24.4 Di1 34.5 34.4 – CONCAVE + CONVEX 32.2 Y BOTTOM 3 mm X 0 HEATSINK SIDE HEATSINK SIDE – CONCAVE + CONVEX 31.8 42.2 52.4 76.7 LABEL SIDE Each mark points to the center position of each chip. Tr2: IGBT Di1: ClampDi Di2: FWDi Th: NTC Thermistor *7 Typical value is measured by using thermally conductive grease of λ = 0.9 [W/(m • K)]. 4 12/11 Rev. 0