CM1200DB-34N Dual IGBTMOD™ HVIGBT Module Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com 1200 Amperes/1700 Volts A D D U K (4 TYP) 4 2 Q F B C E 3 Y 1 Z E1 E2 AA G1 M (3 TYP) G2 V W C1 C2 L (6 PLACES) J H G AB N X 4(E1) T R S 2(C2) E1 C2 G1 G2 C1 E2 P Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of two IGBT Transistors in a halfbridge configuration with each transistor having a reverseconnected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. Features: Q 3(C1) 1(E2) Outline Drawing and Circuit Diagram £Low Drive Power £Low VCE(sat) £Super-Fast Recovery Free-Wheel Diode £Isolated Baseplate for Easy DimensionsInches Millimeters DimensionsInches Millimeters A 5.12±0.02130.0±0.5 P 1.50+0.04/-0.038.0+1.0/-0.0 B 5.51±0.02140.0±0.5 Q 0.2±0.0085.0±0.2 Applications: C 4.88±0.01124.0±0.25 R 0.65 Min. 16.5 Min. D 2.24±0.0157.0±0.25 S 0.30 Min. 7.7 Min. E 1.18±0.00830.0±0.2 T F 0.79±0.00420.0±0.1 U 1.16±0.0229.5±0.5 £Traction £Medium Voltage Drives £High Voltage Power Supplies G 2.09±0.00853.0±0.2 V 0.45±0.00811.5±0.2 H 1.57±0.00840.0±0.2 W J 1.73±0.00844.0±0.2 K M8 Metric M8 Y 1.38±0.00835.0±0.2 L 0.28 Dia. 7.0 Dia. Z 0.63±0.00816.0±0.2 M M4 Metric M4 AA 0.71±0.00818.0±0.2 AB 2.24±0.00857.0±0.2 N 2.17±0.0155.2±0.3 X 0.47±0.00811.85±0.2 0.55±0.00814.0±0.2 1.10+0.04/-0.028.0+1.0/-0.0 Heat Sinking Ordering Information: Example: Select the complete part module number you desire from the table below -i.e. CM1200DB-34N is a 1700V (VCES), 1200 Ampere Dual IGBTMOD™ Power Module. Type Current Rating Amperes VCES Volts (x 50) CM1200 34 12/12 Rev. 1 1 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com CM1200DB-34N Dual IGBTMOD™ HVIGBT Module 1200 Amperes/1700 Volts Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified Ratings SymbolCM1200DB-34NUnits Junction Temperature Tj -40 to 150 °C Storage Temperature Tstg -40 to 125 °C Topr -40 to 125 °C Operating Temperature Collector-Emitter Voltage (VGE = 0V) VCES 1700Volts Gate-Emitter Voltage (VCE = 0V) VGES Collector Current (DC, Tc = 80°C) Peak Collector Current (Pulse) 1200Amperes ICM*1 2400Amperes Emitter Current (Tc = 25°C)*2IE Emitter Surge Current ±20Volts IC (Pulse)*2I *1 EM 1200Amperes 2400Amperes Maximum Power Dissipation (Tc = 25°C, IGBT Part)*3PC 6900Watts Max. Mounting Torque M8 Main Terminal Screws – 177 in-lb Max. Mounting Torque M6 Mounting Screws – 53 in-lb Max. Mounting Torque M4 Auxiliary Terminal Screws – 27 in-lb Module Weight (Typical) – 1.3 kg Isolation Voltage (RMS, Sinusoidal, f = 60Hz, t = 1 min.) Viso 4000Volts Maximum Short Circuit Pulse Width (VCC = 1200V, VCES ≤ 1700V, VGE = 15V, Tj = 125°C) tpsc10µs *1 Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed Topr(max) rating (125°C). *2 Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). *3 Junction temperature (Tj) should not exceed Tj(max) rating (150°C). 2 12/12 Rev. 1 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com CM1200DB-34N Dual IGBTMOD™ HVIGBT Module 1200 Amperes/1700 Volts Static Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Collector-Cutoff Current Gate-Emitter Threshold Voltage Gate Leakage Current Collector-Emitter Saturation Voltage Symbol Test Conditions Min. Typ. Max. Units ICESVCE = VCES, VGE = 0V – – 4 mA VGE(th)IC = 120mA, VCE = 10V 6.0 7.0 8.0 Volts – – 0.5 µA IGESVGE = VGES, VCE = 0V VCE(sat)IC = 1200A, VGE = 15V, Tj = 25°C*4 – 2.15 2.80Volts IC = 1200A, VGE = 15V, Tj = 125°C*4 –2.40–Volts Input Capacitance Cies Output Capacitance Reverse Transfer Capacitance Total Gate Charge Emitter-Collector Voltage – 176 – nF CoesVCE = 10V, f = 100kHz, VGE = 0V – 9.6 – nF Cres –2.8– nF QGVCC = 850V, IC = 1200A, VGE = 15V VEC*2IE = 1200A, VGE = 0V, Tj = 25°C*4 – 6.8 – µC – 2.603.30Volts IE = 1200A, VGE = 0V, Tj = 125°C*4 –2.30–Volts Turn-On Delay Time Turn-On Rise Time Turn-On Switching Energy Turn-Off Delay Time Turn-Off Fall Time td(on)VCC = 850V, IC = 1200A, trVGE = ±15V, RG(on) = 1.3Ω, EonTj = 125°C, Ls = 150nH, Inductive Load td(off)VCC = 850V, IC = 1200A, tfVGE = ±15V, RG(off) = 3.3Ω, – 1.00 – µs – 0.40 – µs – 380 – mJ/P – 1.20 – µs – 0.30 – µs Turn-Off Switching Energy EoffTj = 125°C, Ls = 150nH, Inductive Load – 360 – mJ/P Reverse Recovery Time trr*2VCC = 850V, IC = 1200A, – 1.00 – µs – 560 – Amperes – 300 – µC GE = ±15V, RG(on) = 1.3Ω, Reverse Recovery Current Irr Reverse Recovery Charge Qrr*2Tj = 125°C, Ls = 150nH, Reverse Recovery Energy *2V *2 Erec Inductive Load –220–mJ/P *2 Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). *4 Pulse width and repetition rate should be such as to cause negligible temperature rise. 12/12 Rev. 1 3 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com CM1200DB-34N Dual IGBTMOD™ HVIGBT Module 1200 Amperes/1700 Volts Thermal Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Thermal Resistance, Junction to Case Rth(j-c) Q IGBT Part, 1/2 Module – – 0.018 °C/W Thermal Resistance, Junction to Case Rth(j-c) D FWDi Part, 1/2 Module – – 0.040 °C/W Rth(c-f) λgrease = 1W/m•K, 1/2 Module – 0.016 – °C/W Min. Typ. Max. Units Contact Thermal Resistance, Case to Fin Mechanical Characteristics, Tj = 25 °C unless otherwise specified Characteristics 4 Symbol Test Conditions Comparative Tracking Index CTI – 600 ––– Clearance Distance in Air da – 9.5 – –mm Creepage Distance Along Surface ds – 15.0– – mm Internal Inductance LC-E(int) IGBT Part –30–nH Internal Lead Resistance RC-E(int)TC = 25°C – 0.28 – mΩ 12/12 Rev. 1 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com CM1200DB-34N Dual IGBTMOD™ HVIGBT Module 1200 Amperes/1700 Volts OUTPUT CHARACTERISTICS (TYPICAL) 2000 12V VGE = 20V 1600 10V 1200 800 400 0 1 2 3 4 5 6 3 2 1 0 0 400 1600 1200 800 400 0 800 1200 1600 2000 2400 VCE = 20V Tj = 25°C Tj = 125°C 2000 0 2 4 6 8 10 GATE-EMITTER VOLTAGE, VGE, (VOLTS) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) CAPACITANCE VS. COLLECTOR-EMITTER VOLTAGE (TYPICAL) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) 103 3 2 1 0 400 Cies 102 101 Coes VGE = 15V f = 100kHz Tj = 25°C 100 10-1 800 1200 1600 2000 2400 100 101 FREE-WHEEL DIODE REVERSE RECOVERY CHARGE CHARACTERISTICS (TYPICAL) REVERSE BIAS SAFE OPERATING AREA (RBSOA) 100 0 400 800 1200 1600 2000 2400 EMITTER CURRENT, IE, (AMPERES) 12/12 Rev. 1 COLLECTOR CURRENT, IC, (AMPERES) 200 2000 1500 VCC ≤ 1200V VGE = ±15V RG(off) ≥ 3.3Ω Tj = 125°C Module Chip 1000 500 0 500 VCC = 850V VGE = ±15V RG(on) = 1.3Ω Tj = 125°C Inductive Load 1000 1500 2000 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) 103 104 GATE CHARGE, VGE 20 2500 0 10-1 COLLECTOR CURRENT, IC, (AMPERES) 3000 300 tr tf 10-2 102 102 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) 400 td(off) td(on) 100 Cres COLLECTOR CURRENT, IC, (AMPERES) VCC = 850V VGE = ±15V RG(on) = 1.3Ω Tj = 125°C 12 101 SWITCHING TIME, (µs) VGE = 15V Tj = 25°C Tj = 125°C 500 REVERSE RECOVERY CHARGE, Qrr, (μC) 4 EMITTER CURRENT, IE, (AMPERES) 4 0 Tj = 25°C Tj = 125°C COLLECTOR-EMITTER VOLTAGE, VCE(sat), (VOLTS) 5 0 2400 5 GATE-EMITTER VOLTAGE, VGE, (VOLTS) COLLECTOR-EMITTER VOLTAGE, VCES, (VOLTS) 0 8V TRANSFER CHARACTERISTICS (TYPICAL) COLLECTOR CURRENT, IC, (AMPERES) COLLECTOR-EMITTER VOLTAGE, VCES, (VOLTS) 15V Tj = 125°C CAPACITANCE, Cies, Coes, Cres, (pF) COLLECTOR CURRENT, IC, (AMPERES) 2400 FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) IC = 1200A VCC = 850V Tj = 25°C 16 12 8 4 0 0 2 4 6 8 10 GATE CHARGE, QG, (μC) 5 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com HALF-BRIDGE SWITCHING ENERGY CHARACTERISTICS (TYPICAL) VCC = 850V VGE = ±15V RG(on) = 1.3Ω RG(off) = 3.3Ω Tj = 125°C Inductive Load Eon Eoff Erec 1000 800 600 400 200 0 0 400 800 1200 1600 2000 2400 COLLECTOR CURRENT, IC, (AMPERES) 6 2000 SWITCHING ENERGIES, (mJ/PULSE) SWITCHING ENERGIES, (mJ/PULSE) 1200 HALF-BRIDGE SWITCHING ENERGY CHARACTERISTICS (TYPICAL) VCC = 850V IC = 1200A VGE = ±15V Tj = 125°C Inductive Load Eon Eoff Erec 1600 1200 800 400 0 0 2 4 6 8 GATE RESISTANCE, RG, (Ω) 10 12 NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c') Zth = Rth • (NORMALIZED VALUE) CM1200DB-34N Dual IGBTMOD™ HVIGBT Module 1200 Amperes/1700 Volts TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT & FWDi) 1.2 1.0 0.8 Single Pulse TC = 25°C Per Unit Base = Rth(j-c) = 0.018°C/W (IGBT) Rth(j-c) = 0.040°C/W (FWDi) 0.6 0.4 0.2 0 10-3 10-2 10-1 100 101 TIME, (s) 12/12 Rev. 1