CM400HC-24NFM Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 Single IGBT NFM-Series Module 400 Amperes/1200 Volts G H U (2 TYP.) J V (4 TYP.) K L M B F E G C E W W E D Description: Powerex IGBTs Modules are designed for use in switching applications. Each module consists of one IGBT Transistor in a single configuration with a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. A N P Q R S C T C G E E Outline Drawing and Circuit Diagram Dim. Inches Millimeters Dim. Inches Millimeters M 1.89 48.0 A 4.25 108.0 B 2.44 62.0 N 0.94 24.0 P 0.23 6.0 C 1.016 25.8 D 3.66±0.01 93.0±0.25 Q 0.85 21.5 R 0.14 3.5 0.96 24.4 E 3.15 80.0 F 0.79 20.0 S T G 0.94 24.0 H 0.79 20.0 U M6 M6 V 0.26 Dia. 6.5 Dia. W 0.62 15.8 J 1.14 29.0 K 0.80 20.4 L 1.38 35.0 02/07 1.45+0.04/-0.0236.8+1.0/-0.5 Features: £ Low Drive Power £ Low VCE(sat) £ Discrete Super-Fast Recovery Free-Wheel Diode £ Isolated Baseplate for Easy Heat Sinking Applications: £ AC Motor Control £ UPS £ Battery Powered Supplies Ordering Information: Example: Select the complete part module number you desire from the table below -i.e. CM400HC-24NFM is a 1200V (VCES), 400 Ampere Single IGBT Power Module. Type Current Rating Amperes VCES Volts (x 50) CM 400 24 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 CM400HC-24NFM Single IGBT NFM-Series Module 400 Amperes/1200 Volts Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified Ratings Symbol CM400HC-24NFM Units Tj –40 to 150 °C Junction Temperature Storage Temperature Tstg –40 to 125 °C Collector-Emitter Voltage (G-E Short) VCES 1200 Volts Gate-Emitter Voltage (C-E Short) VGES ±20 Volts IC 400 Amperes ICM 800* Amperes IE 400 Amperes Collector Current Peak Collector Current Emitter Current** Peak Emitter Current** IEM 800* Amperes Maximum Collector Dissipation*** (TC = 25°C)**** PC 2710 Watts Mounting Torque, M6 Main Terminal — 40 in-lb Mounting Torque, M6 Mounting — 40 in-lb Mounting Torque, G(E) Terminal M4 — 15 in-lb Weight — 370 Grams VISO 2500 Volts Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) Static Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Collector-Cutoff Current Gate Leakage Current Symbol Test Conditions Min. Typ. Max. Units ICES VCE = VCES, VGE = 0V — — 1.0 mA IGES VGE = VGES, VCE = 0V — — 0.5 µA Gate-Emitter Threshold Voltage VGE(th) IC = 40mA, VCE = 10V 4.5 6.0 7.5 Volts Collector-Emitter Saturation Voltage***** VCE(sat) IC = 400A, VGE = 15V, Tj = 25°C — 3.0 4.5 Volts IC = 400A, VGE = 15V, Tj = 125°C — 3.0 — Volts Total Gate Charge QG VCC = 600V, IC = 400A, VGE = 15V — 1800 — nC Emitter-Collector Voltage** VEC IE = 400A, VGE = 0V — 2.0 3.0 Volts Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Min. Typ. Max. Units Input Capacitance Symbol Cies Test Conditions — — 63 nF Output Capacitance***** Coes — — 5.3 nF Reverse Transfer Capacitance Cres — — 1.2 nF Inductive Turn-on Delay Time td(on) Load Rise Time Switch Turn-off Delay Time Time Fall Time VCE = 10V, VGE = 0V — — 300 ns — — 100 ns tr VCC = 600V, IC = 400A, td(off) VGE1 = VGE2 = 15V, RG = 0.78Ω, — — 500 ns tf Inductive Load — 60 200 ns Diode Reverse Recovery Time** trr Switching Operation, — 120 200 ns Diode Reverse Recovery Charge** Qrr IE = 400A — 24 — µC *Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed Tj(max) rating. **Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). ***Junction temperature (Tj) should not increase beyond 150°C. ****TC , Tf measured point is just under the chips. *****Pulse width and repetition rate should be such as to cause neglible temperature rise. 02/07 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 CM400HC-24NFM Single IGBT NFM-Series Module 400 Amperes/1200 Volts Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Thermal Resistance, Junction to Case Symbol Test Conditions Min. Typ. Max. Units Rth(j-c)Q Per IGBT 1/2 Module, — — 0.046 °C/W — — 0.07 °C/W — 0.02 — °C/W 0.78 — 7.8 Ω Thermal Resistance, Junction to Case TC Measured Point Just Under Chips Rth(j-c)D Contact Thermal Resistance, Per FWDi 1/2 Module, TC Measured Point Just Under Chips Rth(c-f) Per 1/2 Module, Thermal Grease Applied Case to Fin RG COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) VGE = 20V 12 600 400 10 200 9 8 0 2 4 6 8 3 2 1 0 200 400 101 100 800 0 1 2 3 EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS) CAPACITANCE VS. VCE (TYPICAL) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) REVERSE RECOVERY CHARACTERISTICS (TYPICAL) 103 103 td(on) SWITCHING TIME, (ns) Cies 101 Coes 100 102 tr 101 VCC = 600V VGE = ±15V RG = 0.78Ω Tj = 125°C Inductive Load Cres VGE = 0V 100 101 102 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) 100 101 103 td(off) tf 10-1 10-1 102 COLLECTOR-CURRENT, IC, (AMPERES) 102 02/07 600 VGE = 0V Tj = 25°C Tj = 125°C COLLECTOR CURRENT, IC, (AMPERES) 103 CAPACITANCE, Cies, Coes, Cres, (nF) 4 0 10 VGE = 15V Tj = 25°C Tj = 125°C 102 COLLECTOR CURRENT, IC, (AMPERES) 103 REVERSE RECOVERY TIME, trr, (ns) 0 103 5 Tj = 25°C 15 13 COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) 800 FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) EMITTER CURRENT, IE, (AMPERES) OUTPUT CHARACTERISTICS (TYPICAL) 102 101 101 VCC = 600V VGE = ±15V RG = 0.78Ω Tj = 125°C Inductive Load Irr trr 102 102 101 103 REVERSE RECOVERY CURRENT, Irr, (AMPERES) External Gate Resistance EMITTER CURRENT, IE, (AMPERES) Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 CM400HC-24NFM Single IGBT NFM-Series Module 400 Amperes/1200 Volts SWITCHING LOSS VS. COLLECTOR CURRENT (TYPICAL) VCC = 600V 10 5 0 400 800 1200 1600 100 101 2000 102 103 GATE CHARGE, QG, (nC) COLLECTOR CURRENT, IC, (AMPERES) REVERSE RECOVERY SWITCHING LOSS VS. COLLECTOR CURRENT (TYPICAL) REVERSE RECOVERY SWITCHING LOSS VS. GATE RESISTANCE (TYPICAL) 102 102 VCC = 600V VGE = ±15V RG = 0.78Ω Tj = 125°C Inductive Load 101 100 101 102 COLLECTOR CURRENT, IC, (AMPERES) 101 102 VCC = 600V VGE = ±15V RG = 0.78Ω Tj = 125°C Inductive Load Eon Eoff SWITCHING LOSS, Eon, Eoff, (mJ/PULSE) SWITCHING LOSS, E(on), E(off), (mJ/PULSE) VCC = 400V 15 0 SWITCHING LOSS, Err, (mJ/PULSE) 102 IC = 400A SWITCHING LOSS, Err, (mJ/PULSE) GATE-EMITTER VOLTAGE, VGE, (VOLTS) 20 SWITCHING LOSS VS. GATE RESISTANCE (TYPICAL) 103 101 100 10-1 101 10-2 101 GATE RESISTANCE, RG, (Ω) 101 102 GATE RESISTANCE, RG, (Ω) VCC = 600V VGE = ±15V IC = 400A Tj = 125°C Inductive Load 100 100 VCC = 600V VGE = ±15V IC = 400A Tj = 125°C Inductive Load Eon Eoff 100 100 NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c') Zth = Rth • (NORMALIZED VALUE) GATE CHARGE VS. VGE 102 10-3 10-3 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT & FWDi) 10-2 10-1 100 101 10-1 Single Pulse TC = 25°C Under the Chip Per Unit Base = Rth(j-c) = 0.46°C/W (IGBT) Rth(j-c) = 0.07°C/W (FWDi) 10-2 10-5 10-4 10-3 10-3 TIME, (s) 02/07