CM200DU-12NFH Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 Dual IGBTMOD™ NFH-Series Module 200 Amperes/600 Volts TC MEASUREMENT POINT A D N M K C2E1 K E2 F E C1 E2 G2 S B G1 E1 H G F P - NUTS (3 TYP) Q - (2 TYP) Y W W V W W X R J Description: Powerex IGBTMOD™ Modules are designed for use in high frequency applications; 30 kHz for hard switching applications and 60 to 70 kHz for soft switching applications. Each module consists of two IGBT Transistors in a half-bridge configuration with each transistor having a reverseconnected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. Z V T U C LABEL L G2 E2 C2E1 E2 C1 E1 G1 Outline Drawing and Circuit Diagram Dimensions Inches Millimeters A 3.70 94.0 B 1.89 48.0 C 1.18+0.04/-0.0130.0+1.0/-0.5 D 3.15±0.01 80.0±0.25 E 0.43 11.0 F 0.16 4.0 G 0.71 18.0 H 0.51 13.0 J 0.53 13.5 K 0.91 23.0 L 0.83 21.2 M 0.67 17.0 Rev. 11/09 Dimensions N P Q R S T U V W X Y Z Inches 0.28 M5 Metric 0.26 Dia. 0.02 0.94 0.3 0.33 0.63 0.1 0.98 0.47 0.11 Millimeters 7.0 M5 Dia. 6.5 4.0 24.0 7.5 8.5 16.0 2.5 25.0 12.0 2.8 Features: £ Low VCE(sat) £ Low ESW(off) £ Discrete Super-Fast Recovery Free-Wheel Diode £ Isolated Baseplate for Easy Heat Sinking Applications: £Power Supplies £ Induction Heating £ Welders Ordering Information: Example: Select the complete part module number you desire from the table below -i.e. CM200DU-12NFH is a 600V (VCES), 200 Ampere Dual IGBTMOD™ Power Module. Type Current Rating Amperes VCES Volts (x 50) CM 200 12 1 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 CM200DU-12NFH Dual IGBTMOD™ NFH-Series Module 200 Amperes/600 Volts Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified Ratings Symbol CM200DU-12NF Units Junction Temperature Tj –40 to 150 °C Storage Temperature Tstg –40 to 125 °C Collector-Emitter Voltage (G-E Short) VCES 600 Volts Gate-Emitter Voltage (C-E Short) VGES ±20 Volts IC 200* Amperes ICM 400* Amperes Collector Current (TC = 25°C) Peak Collector Current Emitter Current** (TC = 25°C) IE 200* Amperes IEM 400* Amperes Maximum Collector Dissipation (TC = 25°C, Tj ≤ 150°C) PC 590 Watts Maximum Collector Dissipation (TC' = 25°C, Tj' ≤ 150°C) PC 830 Watts Mounting Torque, M5 Main Terminal — 30 in-lb Mounting Torque, M6 Mounting — 40 in-lb — 310 Grams VISO 2500 Volts Peak Emitter Current** Weight Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) Static Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Collector-Cutoff Current ICES VCE = VCES, VGE = 0V — — 1.0 mA Gate Leakage Current IGES VGE = VGES, VCE = 0V — — 0.5 µA Gate-Emitter Threshold Voltage VGE(th) IC = 20mA, VCE = 10V 5.0 6.0 7.0 Volts Collector-Emitter Saturation Voltage VCE(sat) IC = 200A, VGE = 15V, Tj = 25°C — 2.0 2.7 Volts IC = 200A, VGE = 15V, Tj = 125°C — 1.95 — Volts Total Gate Charge QG VCC = 300V, IC = 200A, VGE = 15V — 1240 — nC Emitter-Collector Voltage** VEC IE = 100A, VGE = 0V — — 2.6 Volts Min. Typ. Max. Units — — 55 nf — — 3.6 nf — — 2.0 nf Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Input Capacitance Cies Output Capacitance Coes Reverse Transfer Capacitance Cres Inductive Turn-on Delay Time td(on) Load Rise Time Switch Turn-off Delay Time Time Fall Time Test Conditions VCE = 10V, VGE = 0V — — 250 ns VCC = 300V, IC = 200A, — — 150 ns td(off) VGE1 = VGE2 = 15V, RG = 6.3Ω, — — 500 ns tf Inductive Load Switching Operation, — — 150 ns Diode Reverse Recovery Time** trr IE = 200A — — 150 ns Diode Reverse Recovery Charge** Qrr — 3.5 — µC tr * Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed Tj(max) rating. **Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). 2 Rev. 11/09 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 CM200DU-12NFH Dual IGBTMOD™ NFH-Series Module 200 Amperes/600 Volts Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Thermal Resistance, Junction to Case Rth(j-c)Q Per IGBT 1/2 Module, TC Reference — — 0.21 °C/W Thermal Resistance, Junction to Case Rth(j-c)D Per FWDi 1/2 Module, TC Reference — — 0.35 °C/W Thermal Resistance, Junction to Case Rth(j-c)'Q Per IGBT 1/2 Module, — — 0.15 °C/W Rth(c-f) Per 1/2 Module, Thermal Grease Applied — 0.07 — °C/W 3.1 — 31 Ω Point per Outline Drawing Point per Outline Drawing TC Reference Point Under Chips Contact Thermal Resistance External Gate Resistance RG COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) OUTPUT CHARACTERISTICS (TYPICAL) 9.5 9 8.5 8 200 7.5 100 7 Tj = 25oC 0 0 1 2 3 4 2.0 1.5 1.0 0.5 100 0 200 300 Tj = 25°C 4 3 IC = 200A 2 IC = 80A 1 0 400 IC = 400A 6 8 10 12 14 18 COLLECTOR-CURRENT, IC, (AMPERES) GATE-EMITTER VOLTAGE, VGE, (VOLTS) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) CAPACITANCE VS. VCE (TYPICAL) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) CAPACITANCE, Cies, Coes, Cres, (nF) Cies 102 td(off) 101 Coes 100 Cres td(on) tf 102 tr VCC = 300V VGE = ±15V RG = 6.3Ω Tj = 125°C Inductive Load VGE = 0V 0 0.5 1.0 1.5 2.0 2.5 3.0 EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS) Rev. 11/09 20 103 102 Tj = 25°C Tj = 125°C 101 16 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) 103 EMITTER CURRENT, IE, (AMPERES) 2.5 0 5 5 VGE = 15V Tj = 25°C Tj = 125°C SWITCHING TIME, (ns) COLLECTOR CURRENT, IC, (AMPERES) 15 13 300 3.0 10 COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) 11 VGE = 20V COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) 400 COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 10-1 10-1 100 101 102 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) 101 101 102 103 COLLECTOR CURRENT, IC, (AMPERES) 3 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 CM200DU-12NFH Dual IGBTMOD™ NFH-Series Module 200 Amperes/600 Volts REVERSE RECOVERY CHARACTERISTICS (TYPICAL) VCC = 300V VGE = 15V RG = 6.3Ω Tj = 25C Inductive Load 102 101 103 102 NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c') Zth = Rth • (NORMALIZED VALUE) 4 0 0 300 600 900 1200 1500 1800 10-1 101 102 103 REVERSE RECOVERY SWITCHING LOSS VS. EMITTER CURRENT (TYPICAL) REVERSE RECOVERY SWITCHING LOSS VS. GATE RESISTANCE (TYPICAL) 101 101 102 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT & FWDi) 10-2 10-1 100 101 Err 100 10-1 101 VCC = 300V VGE = 15V RG = 6.3Ω Tj = 125C Inductive Load C Snubber at Bus 102 EMITTER CURRENT, IE, (AMPERES) GATE RESISTANCE, RG, (Ω) 10-3 8 VCC = 300V VGE = 15V RG = 6.3Ω Tj = 125C Inductive Load C Snubber at Bus ESW(on) ESW(off) 100 SWITCHING LOSS VS. GATE RESISTANCE (TYPICAL) 100 100 10-2 VCC = 300V 12 COLLECTOR CURRENT, IC, (AMPERES) ESW(on) ESW(off) 10-1 VCC = 200V GATE CHARGE, QG, (nC) VCC = 300V VGE = 15V IC = 200A Tj = 125C Inductive Load C Snubber at Bus 10-3 16 101 EMITTER CURRENT, IE, (AMPERES) 101 100 IC = 200A 103 REVERSE RECOVERY SWITCHING LOSS, Err, (mJ/PULSE) SWITCHING LOSS, ESW(on), ESW(off), (mJ/PULSE) 101 101 SWITCHING LOSS, ESW(on), ESW(off), (mJ/PULSE) 102 20 GATE-EMITTER VOLTAGE, VGE, (VOLTS) 102 REVERSE RECOVERY CURRENT, Irr, (AMPERES) 103 Irr trr REVERSE RECOVERY SWITCHING LOSS, Err, (mJ/PULSE) REVERSE RECOVERY TIME, trr, (ns) 103 SWITCHING LOSS VS. COLLECTOR CURRENT (TYPICAL) GATE CHARGE VS. VGE Err 100 10-1 100 VCC = 300V VGE = 15V IE = 200A Tj = 125C Inductive Load C Snubber at Bus 101 102 GATE RESISTANCE, RG, (Ω) 101 10-1 Single Pulse TC = 25C Per Unit Base = Rth(j-c) = 0.21C/W (IGBT) Rth(j-c) = 0.35C/W (FWDi) 10-2 10-5 10-4 10-3 10-3 TIME, (s) 4 Rev. 11/09