CM300DU-12NFH Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 Dual IGBTMOD™ NFH-Series Module 300 Amperes/600 Volts A D S S K K K V L (4 PLACES) Q M (3 PLACES) G G2 E2 B E H E1 C2E1 C1 E2 G1 G N J AA Q Z F F Q P X V Q P Y T U P S C W LABEL R G2 E2 C2E1 E2 C1 E1 G1 Outline Drawing and Circuit Diagram DimensionsInches Millimeters DimensionsInches Millimeters A 108.0 P 0.71 62.0 4.25 18.0 Q 0.28 1.14+0.04/-0.02 29.0+1.0/-0.5 R 0.874 D 3.66±0.01 93.0±0.25 S 0.30 7.5 E 1.89±0.01 48.0±0.25 T 0.94 24.0 B C 2.44 U 0.11 2.8 6.0 V 0.16 4.0 0.59 15.0 W 0.33 8.5 0.7854 19.95 X 0.46 11.75 0.012 ~ 0 F 0.98 G 0.24 H J K 7.0 22.2 25.0 Y 0.3 ~ 0 0.55 14.0 L 0.26 Dia. 6.5 Dia. Z 0.85 21.5 M M6 Metric M6 AA 0.69 17.5 N 1.022 25.95 Description: Powerex IGBTMOD™ Modules are designed for use in high frequency applications; 30 kHz for hard switching applications and 60 to 70 kHz for soft switching applications. Each module consists of two IGBT Transistors in a half-bridge configuration with each transistor having a reverseconnected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. Features: £ Low VCE(sat) £ Low ESW(off) £ Discrete Super-Fast Recovery Free-Wheel Diode £ Isolated Baseplate for Easy Heat Sinking Applications: £ Power Supplies £ Induction Heating £ Welders Ordering Information: Example: Select the complete part module number you desire from the table below -i.e. CM300DU-12NFH is a 600V (VCES), 300 Ampere Dual IGBTMOD™ Power Module. Type Current Rating Amperes VCES Volts (x 50) CM300 7/11 Rev. 1 12 1 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 CM300DU-12NFH Dual IGBTMOD™ NFH-Series Module 300 Amperes/600 Volts Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified Ratings SymbolCM300DU-12NFUnits Junction Temperature Tj –40 to 150 °C Storage Temperature Tstg –40 to 125 °C Collector-Emitter Voltage (G-E Short) VCES 6 00 Volts Gate-Emitter Voltage (C-E Short) VGES ±20Volts Collector Current (TC = 25°C) Peak Collector Current IC 300*Amperes ICM 600*Amperes Emitter Current** (TC = 25°C) Peak Emitter Current** IE 300*Amperes IEM 600*Amperes Maximum Collector Dissipation (TC = 25°C, Tj ≤ 150°C) PC 780Watts Maximum Collector Dissipation (TC' = 25°C, Tj' ≤ 150°C) PC 1250Watts Mounting Torque, M6 Main Terminal — 40 in-lb Mounting Torque, M6 Mounting — 40 in-lb — 400Grams Weight Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) VISO 2500Volts Static Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Collector-Cutoff Current Symbol Test Conditions Min. Typ. Max. Units mA ICES VCE = VCES, VGE = 0V — — 1.0 VGE = VGES, VCE = 0V — — 0.5 µA Gate-Emitter Threshold Voltage VGE(th) IC = 30mA, VCE = 10V 5.0 6.0 7.0 Volts Collector-Emitter Saturation Voltage VCE(sat) IC = 300A, VGE = 15V, Tj = 25°C — 2.0 2.7 Volts IC = 300A, VGE = 15V, Tj = 125°C — 1.95 — Volts Total Gate Charge QG VCC = 300V, IC = 300A, VGE = 15V — 1860 — nC Emitter-Collector Voltage** VEC IE = 300A, VGE = 0V — — 2.6 Volts Min. Typ. Max. Units — — 83 nf — — 5.4 nf — — 3.0 nf Gate Leakage Current IGES Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Input Capacitance Cies Output Capacitance Coes Reverse Transfer Capacitance Cres Inductive Turn-on Delay Time td(on) Load Rise Time Switch Turn-off Delay Time Time Fall Time Test Conditions VCE = 10V, VGE = 0V — — 350 ns VCC = 300V, IC = 300A, — — 150 ns td(off) VGE1 = VGE2 = 15V, RG = 4.2Ω, — — 700 ns tf Inductive Load Switching Operation, — — 150 ns Diode Reverse Recovery Time** trr IE = 300A — — 200 ns Diode Reverse Recovery Charge** Qrr — 5.5 — µC tr * Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed Tj(max) rating. **Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). 2 7/11 Rev. 1 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 CM300DU-12NFH Dual IGBTMOD™ NFH-Series Module 300 Amperes/600 Volts Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Thermal Resistance, Junction to Case Rth(j-c)Q Per IGBT 1/2 Module, TC Reference — — 0.16 °C/W Thermal Resistance, Junction to Case Rth(j-c)D Per FWDi 1/2 Module, TC Reference — — 0.24 °C/W Thermal Resistance, Junction to Case Rth(j-c)'Q Per IGBT 1/2 Module, — — 0.10 °C/W Rth(c-f) Per 1/2 Module, Thermal Grease Applied — 0.04 — °C/W 2.1 — 21 Ω Point per Outline Drawing Point per Outline Drawing TC Reference Point Under Chips Contact Thermal Resistance External Gate Resistance RG COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 500 3.0 13 15 VGE = 20V 10 11 COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) 9.5 9 8.5 400 8 300 7.5 200 100 7 Tj = 25°C 0 0 1 2 3 4 2.0 1.5 1.0 0.5 100 0 200 300 400 500 4 3 IC = 600A IC = 300A 2 IC = 120A 1 0 600 Tj = 25°C 6 8 10 12 14 18 COLLECTOR-CURRENT, IC, (AMPERES) GATE-EMITTER VOLTAGE, VGE, (VOLTS) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) CAPACITANCE VS. VCE (TYPICAL) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) CAPACITANCE, Cies, Coes, Cres, (nF) 102 td(off) Cies 101 Coes Cres 100 td(on) 102 tf VCC = 300V VGE = 15V RG = 4.2Ω Tj = 125°C Inductive Load tr VGE = 0V 0 0.5 1.0 1.5 2.0 2.5 3.0 EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS) 7/11 Rev. 1 20 103 102 Tj = 25°C Tj = 125°C 101 16 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) 103 EMITTER CURRENT, IE, (AMPERES) 2.5 0 5 5 VGE = 15V Tj = 25°C Tj = 125°C SWITCHING TIME, (ns) COLLECTOR CURRENT, IC, (AMPERES) 600 COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) OUTPUT CHARACTERISTICS (TYPICAL) 10-1 10-1 100 101 102 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) 101 101 102 103 COLLECTOR CURRENT, IC, (AMPERES) 3 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 CM300DU-12NFH Dual IGBTMOD™ NFH-Series Module 300 Amperes/600 Volts REVERSE RECOVERY CHARACTERISTICS (TYPICAL) VCC = 300V VGE = 15V RG = 4.2Ω Tj = 25°C Inductive Load ESW( on), SWITCHING LOSS, ESW( 101 103 102 NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c') Zth = Rth • (NORMALIZED VALUE) (mJ/PULSE) off), 0 0 500 1000 1500 2000 ESW( on), 2500 10-1 101 102 103 REVERSE RECOVERY SWITCHING LOSS VS. EMITTER CURRENT (TYPICAL) REVERSE RECOVERY SWITCHING LOSS VS. GATE RESISTANCE (TYPICAL) 101 101 102 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT & FWDi) 10-2 10-1 100 101 Err 100 10-1 101 VCC = 300V VGE = 15V RG = 4.2Ω Tj = 125°C Inductive Load C Snubber at Bus 102 EMITTER CURRENT, IE, (AMPERES) GATE RESISTANCE, RG, () 10-3 4 SWITCHING LOSS VS. GATE RESISTANCE (TYPICAL) 100 100 10-2 8 VCC = 300V VGE = 15V RG = 4.2Ω Tj = 125°C Inductive Load C Snubber at Bus ESW(on) ESW(off) 100 COLLECTOR CURRENT, IC, (AMPERES) ESW(on) ESW(off) 10-1 VCC = 300V GATE CHARGE, QG, (nC) VCC = 300V VGE = 15V IC = 300A Tj = 125°C Inductive Load C Snubber at Bus 10-3 VCC = 200V 12 EMITTER CURRENT, IE, (AMPERES) 101 100 16 101 103 REVERSE RECOVERY SWITCHING LOSS, Err, (mJ/PULSE) 102 off), (mJ/PULSE) 101 101 IC = 300A SWITCHING LOSS, ESW( 102 20 GATE-EMITTER VOLTAGE, VGE, (VOLTS) 102 REVERSE RECOVERY CURRENT, Irr, (AMPERES) 103 Irr trr REVERSE RECOVERY SWITCHING LOSS, Err, (mJ/PULSE) REVERSE RECOVERY TIME, trr, (ns) 103 SWITCHING LOSS VS. COLLECTOR CURRENT (TYPICAL) GATE CHARGE VS. VGE Err 100 10-1 100 VCC = 300V VGE = 15V IE = 300A Tj = 125°C Inductive Load C Snubber at Bus 101 102 GATE RESISTANCE, RG, () 101 10-1 Single Pulse TC = 25C Per Unit Base = Rth(j-c) = 0.16°C/W (IGBT) Rth(j-c) = 0.24°C/W (FWDi) 10-2 10-5 10-4 10-3 10-3 TIME, (s) 4 7/11 Rev. 1