SavantIC Semiconductor Product Specification BU932 Silicon NPN Power Transistors DESCRIPTION ·With TO-3 package ·DARLINGTON APPLICATIONS ·Automotive ignition applications ·Inverters circuits for motor controls PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 500 V VCEO Collector-emitter voltage Open base 450 V VEBO Emitter-base voltage Open collector 5 V IC Collector current 15 A ICM Collector current-peak 30 A IB Base current 1 A IBM Base current-peak 5 A PT Total power dissipation 150 W Tj Junction temperature 200 Tstg Storage temperature -40~200 TC/25 THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance from junction to case VALUE 1.0 UNIT /W SavantIC Semiconductor Product Specification BU932 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-emitter sustaining voltage IC=100mA ; IB=0 VCEsat Collector-emitter saturation voltage IC=8A; IB=150mA 1.8 V VBEsat Base-emitter saturation voltage IC=8A; IB=150mA 2.2 V ICEO Collector cut-off current VCE=450V ;IB=0 1.0 mA ICES Collector cut-off current VCE=450V ;VBE=0 TC=125 1.0 5.0 mA IEBO Emitter cut-off current VEB=5V; IC=0 50 mA hFE DC current gain IC=5A ; VCE=10V VF Diode forward voltage IF=10A 2.8 V 2 MIN TYP. MAX 450 UNIT V 300 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3 BU932