2SB764L PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURE ● Power dissipation PCM: 0.9 W (Tamb=25℃) ● Collector current ICM: -1 A ● Collector-base voltage V(BR)CBO: -60 V ● Operating and storage junction temperature range TO-92L G H TJ, TSTG: -55℃ to +150℃ 1Emitter 2Collector 3Base J A D Collector REF. 2 B K 3 Base PACKAGING INFORMATION E C 1 Weight: 0.3900 g (Approximate) Emitter F A B C D E F G H J K Millimeter Min. Max. 4.70 5.10 7.80 8.20 13.80 14.20 3.70 4.10 0.35 0.55 0.35 0.45 1.27 TYP. 1.28 1.58 2.44 2.64 0.60 0.80 ELECTRICAL CHARACTERISTICS (at TA = 25°C unless otherwise specified) Symbol Min. Typ. Max. Unit Collector-Base Breakdown Voltage Parameter V(BR)CBO -60 - - V IC = -10μA, IE = 0 Collector-Emitter Breakdown Voltage V(BR)CEO -50 - - V IC = -1mA, IB = 0 Emitter-Base Breakdown Voltage V(BR)EBO -5 - - V IE = -10μA, IC = 0 ICBO - - -1 μA VCB = -50V, IE = 0 μA Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage IEBO - - -1 hFE(1) 60 - 320 hFE(2) 30 - - VCE(sat) - - -0.7 Test Conditions VEB = -5V, IC = 0 VCE = -2V, IC = -0.05A VCE = -2V, IC = -1A V IC = -0.5A, IB = -0.05A Base-Emitter Voltage VBE - - -1.2 V IC = -0.5A, IB = -0.05A Transition Frequency fT - 150 - MHz VCE = -10V, IC = -0.05A COB - 20 - pF Collector Output Capacitance VCB = -10V, IE = 0, f = 1 MHz CLASSIFICATION OF hFE(1) Rank Range 01-April-2009 Rev. A D E F 60 - 120 100 - 200 160 - 320 Page 1 of 3 2SB764L Elektronische Bauelemente PNP Plastic Encapsulated Transistor CHARACTERISTIC CURVES 2SB764L 01-April-2009 Rev. A Page 2 of 3 2SB764L Elektronische Bauelemente PNP Plastic Encapsulated Transistor CHARACTERISTIC CURVES 2SB764L 01-April-2009 Rev. A Page 3 of 3