BCX55 NPN Transistors Plastic-Encapsulate Transistors Elektronische Bauelemente RoHS Compliant Product 1 2 SOT-89 3 1.BASE 4.4~4.6 2.COLLECTOR 1.4~1.8 1.4~1.6 0.36~0.56 A V 1.5Ref. 2.3~2.6 W (Tamb=25oC) 0.9~1.1 Power dissipation PCM: 0.5 Collector current ICM: 1 Collector-base voltage V(BR)CBO: 60 3.94~4.25 3.EMITTER Features 0.32~0.52 0.35~0.44 2.9~3.1 Dimensision in Millimeter Operating and storage junction temperature range TJ, Tstg: -55 oC to +150oC o ELECTRICAL CHARACTERISTICS (Tamb=25 C Parameter unless otherwise specified) Symbol Test conditions MIN MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic=100µA, IE=0 60 V Collector-emitter breakdown voltage V(BR)CEO IC= 10mA , IB=0 60 V Emitter-base breakdown voltage V(BR)EBO IE=10µA, IC=0 5 V Collector cut-off current ICBO VCB=30V, IE=0 0.1 µA Emitter cut-off current IEBO VEB=5 V, IC=0 0.1 µA hFE(1) VCE=2V, IC= 150mA hFE(2) VCE=2V, IC= 5mA 40 hFE(3) VCE=2V, IC= 500mA 25 Collector-emitter saturation voltage VCE(sat) IC=500 mA, IB= 50mA 0.5 V Base-emitter VBE(ON) IC= 500 mA, VCE=2V 1 V DC current gain BCX55 BCX55-10 BCX55-16 voltage fT Transition frequency DEVICE MARKING http://www.SeCoSGmbH.com 01-Jun-2002 Rev. A BCX55=BE BCX55-10=BG VCE= 10V, IC= 50mA f = 100MHz 63 63 100 130 250 160 250 MHz BCX55-16=BM Any changing of specification will not be informed individual Page 1 of 1