SECOS CZD1225

CZD1225
PNP Epitaxial Planar Silicon Transistor
Elektronische Bauelemente
DESCRIPTION
D-Pack (TO-252)
The CZD1225 is designed for power amplifier and driver stage
amplifier applications.
A
B
FEATURES

High transition frequency:fT = 100MHz (typ.)

Complements to CZD2983
C
D
GE
K
M
Collector
MARKING
REF.
Date Code
A
B
C
D
E
F
G
H

Base

Emitter
1
N
O
P
J

1225

HF
Millimeter
Min.
Max.
6.4
6.8
5.20
5.50
2.20
2.40
0.45
0.58
6.8
7.3
2.40
3.0
5.40
6.2
0.8
1.20
REF.
J
K
M
N
O
P
Millimeter
Min.
Max.
2.30 REF.
0.70
0.90
0.50
1.1
0.9
1.6
0
0.15
0.43
0.58
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Parameter
Symbol
Ratings
Unit
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Base Current
Total Device Dissipation (TA=25°C)
Total Device Dissipation (TC=25°C)
Junction Temperature
Storage Temperature
VCBO
VCEO
VEBO
IC
IB
PD
PD
TJ
TSTG
-160
-160
-5
-1.5
-0.3
1
15
150
-55 ~ 150
V
V
V
A
A
W
W
℃
℃
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base-emitter voltage
*DC current gain
Transition frequency
Output Capacitance
Symbol
Min.
Typ.
Max.
Unit
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
*VCE(sat)
*VBE(on)
*hFE
fT
COB
-160
-160
-5
-
-
V
V
V
A
A
V
V
70
-
100
30
-1
-1
-1.5
-1.0
240
-
MHz
pF
Test Conditions
IC=-1mA, IE=0
IC=-10mA, IB=0
IE=-1mA, IC=0
VCB=-160V, IE=0
VEB=-5V, IC=0
IC=-500mA, IB=-50mA
VCE=-5V, IC=-0.5A
VCE=-5V, IC=-0.1A
VCE=-10V, IE=-0.1A,
VCB=-10V, IE=0, f=1MHz
*Measured under pulse condition. Pulse width≦300μs, Duty Cycle≦2%
CLASSIFICATION OF hFE
Rank
Range
http://www.SeCoSGmbH.com/
15-Apr-2010 Rev. A
O
70 ~ 140
Y
120 ~ 240
Any changes of specification will not be informed individually.
Page 1 of 2
CZD1225
Elektronische Bauelemente
PNP Epitaxial Planar Silicon Transistor
CHARACTERISTIC CURVES
http://www.SeCoSGmbH.com/
15-Apr-2010 Rev. A
Any changes of specification will not be informed individually.
Page 2 of 2