SECOS PZT4672

PZT4672
NPN Transistor
Elektronische Bauelemente
Epitaxial Planar Transistor
RoHS Compliant Product
SOT-223
Description
The PZT4672 is designed for low
frequency amplifier applications.
Features
*Excellent DC Current Gain Characteristic
*Low Saturation Voltage, Typically
VCE(sat)=0.1V at IC/IB=1A/50mA
REF.
4 6 7 2
Date Code
B
ABSOLUTE MAXIMUM RATINGS
A
C
D
E
I
H
C
Millimeter
Min.
Max.
6.70
7.30
2.90
3.10
0.02
0.10
0
10
0.60
0.80
0.25
0.35
E
REF.
B
J
1
2
3
4
5
Millimeter
Min.
Max.
13 TYP.
2.30 REF.
6.30
6.70
6.30
6.70
3.30
3.70
3.30
3.70
1.40
1.80
Ta=25oC
Symbol
Value
Units
VCBO
Collector-Base Voltage
60
V
VCEO
VEBO
Collector-Emitter Voltage
Emitter-Base Voltage
50
V
V
Collector Current (DC)
Collector Current (Pulse PW=10ms)
2
5
IC
PD
TJ,Tstg
Parameter
6
Total Power Dissipation
A
W
2
Junction and Storage Temperature
C
-55~+150
O
o
ELECTRICAL CHARACTERISTICS Tamb=25 C unless otherwise specified
Parameter
Collector-Base Breakdown Voltage
Symbol
BVCBO
*BVCEO
BVEBO
Min
Typ.
-
Max
-
Unit
V
V
V
-
100
nA
VCB= 60V,IE=0
Test Conditions
I C= 50 µA,IE=0
I C= 1mA,IB=0
I E= 50µA,IC=0
Collector-Base Cutoff Current
I CBO
60
50
6
-
Emitter-Base Cutoff Current
I EBO
-
-
100
nA
VEB=5V,IC=0
Collector Saturation Voltage
*VCE(sat)
*hFE
-
0.1
-
0.35
V
I C=1A,IB=50mA
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
DC Current Gain
Gain-Bandwidth Product
fT
Output Capacitance
Cob
120
-
210
400
-
25
-
MH z
pF
VCE= 2 V, I C=500mA
VCE= 2 V, IC= 500 mA,f=100MHz
VCB=10V , f=1MHz,IE=0
*Pulse width≦380µs, Duty Cycle≦2%
Classification of hFE
Rank
Range
http://www.SeCoSGmbH.com
01-Jun-2002 Rev. A
A
120~240
B
200~400
Any changing of specification will not be informed individual
Page 1 of 2
PZT4672
Elektronische Bauelemente
NPN Transistor
Epitaxial Planar Transistor
Characteristics Curve
http://www.SeCoSGmbH.com
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
Page 2 of 2