PZT4672 NPN Transistor Elektronische Bauelemente Epitaxial Planar Transistor RoHS Compliant Product SOT-223 Description The PZT4672 is designed for low frequency amplifier applications. Features *Excellent DC Current Gain Characteristic *Low Saturation Voltage, Typically VCE(sat)=0.1V at IC/IB=1A/50mA REF. 4 6 7 2 Date Code B ABSOLUTE MAXIMUM RATINGS A C D E I H C Millimeter Min. Max. 6.70 7.30 2.90 3.10 0.02 0.10 0 10 0.60 0.80 0.25 0.35 E REF. B J 1 2 3 4 5 Millimeter Min. Max. 13 TYP. 2.30 REF. 6.30 6.70 6.30 6.70 3.30 3.70 3.30 3.70 1.40 1.80 Ta=25oC Symbol Value Units VCBO Collector-Base Voltage 60 V VCEO VEBO Collector-Emitter Voltage Emitter-Base Voltage 50 V V Collector Current (DC) Collector Current (Pulse PW=10ms) 2 5 IC PD TJ,Tstg Parameter 6 Total Power Dissipation A W 2 Junction and Storage Temperature C -55~+150 O o ELECTRICAL CHARACTERISTICS Tamb=25 C unless otherwise specified Parameter Collector-Base Breakdown Voltage Symbol BVCBO *BVCEO BVEBO Min Typ. - Max - Unit V V V - 100 nA VCB= 60V,IE=0 Test Conditions I C= 50 µA,IE=0 I C= 1mA,IB=0 I E= 50µA,IC=0 Collector-Base Cutoff Current I CBO 60 50 6 - Emitter-Base Cutoff Current I EBO - - 100 nA VEB=5V,IC=0 Collector Saturation Voltage *VCE(sat) *hFE - 0.1 - 0.35 V I C=1A,IB=50mA Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage DC Current Gain Gain-Bandwidth Product fT Output Capacitance Cob 120 - 210 400 - 25 - MH z pF VCE= 2 V, I C=500mA VCE= 2 V, IC= 500 mA,f=100MHz VCB=10V , f=1MHz,IE=0 *Pulse width≦380µs, Duty Cycle≦2% Classification of hFE Rank Range http://www.SeCoSGmbH.com 01-Jun-2002 Rev. A A 120~240 B 200~400 Any changing of specification will not be informed individual Page 1 of 2 PZT4672 Elektronische Bauelemente NPN Transistor Epitaxial Planar Transistor Characteristics Curve http://www.SeCoSGmbH.com 01-Jun-2002 Rev. A Any changing of specification will not be informed individual Page 2 of 2