AO3435 20V P-Channel MOSFET General Description The AO3435 uses advanced trench technology to provide excellent RDS(ON) , low gate charge and operation with gate voltages as low as 1.5V. This device is suitable for use in buck convertor applications. Features VDS = -20V ID = -3.5A (VGS = -4.5V) RDS(ON) < 70mΩ (VGS =- 4.5V) RDS(ON) < 90mΩ (VGS = -2.5V) RDS(ON) < 110mΩ (VGS = -1.8V) RDS(ON) < 130mΩ (VGS = -1.5V) D G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol 10 Sec Drain-Source Voltage VDS Steady State -20 Gate-Source Voltage ±8 VGS TA=25°C Continuous Drain Current A Pulsed Drain Current TA=70°C B TA=70°C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A Steady-State Steady-State Maximum Junction-to-Lead C 1/4 V -3.5 -2.9 -2.7 -2.3 IDM TA=25°C Power Dissipation A ID Units V A -25 PD 1.4 1 0.9 0.6 TJ, TSTG Symbol RθJA RθJL -55 to 150 Typ 70 100 63 W °C Max 90 125 80 Units °C/W °C/W °C/W www.freescale.net.cn AO3435 20V P-Channel MOSFET Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=-250µA, VGS=0V -20 -1 Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS=±8V VGS(th) Gate Threshold Voltage VDS=VGS ID=-250µA -0.5 ID(ON) On state drain current VGS=-4.5V, VDS=-5V -25 TJ=55°C TJ=125°C VGS=-2.5V, ID=-3.0A 70 100 70 90 mΩ mΩ -1 V -1.4 A 745 pF Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance 15 -0.7 560 VGS=0V, VDS=-10V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Total Gate Charge Qg VGS=-4.5V, VDS=-10V, ID=-3.5A Gate Source Charge mΩ mΩ IS Qgs 56 80 110 IS=-1A,VGS=0V Gate resistance V A 130 VDS=-5V, ID=-3.5A Rg -1 85 Diode Forward Voltage Reverse Transfer Capacitance nA 100 Forward Transconductance Crss -0.65 µA VGS=-1.8V, ID=-2.0A VSD Output Capacitance Units VGS=-1.5V, ID=-0.5A gFS Coss -5 ±100 VGS=-4.5V, ID=-3.5A Static Drain-Source On-Resistance Max V VDS=-20V, VGS=0V IDSS RDS(ON) Typ S 80 pF 70 pF 15 23 Ω 8.5 11 nC 1.2 nC Qgd Gate Drain Charge 2.1 nC tD(on) Turn-On DelayTime 7.2 ns tr Turn-On Rise Time 36 ns tD(off) Turn-Off DelayTime 53 ns tf trr Turn-Off Fall Time IF=-3.5A, dI/dt=100A/µs 37 Qrr Body Diode Reverse Recovery Charge IF=-3.5A, dI/dt=100A/µs 27 VGS=-4.5V, VDS=-10V, RL=3Ω, RGEN=6Ω 56 Body Diode Reverse Recovery Time ns 49 ns nC A: The value of R θJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. copper, in a still air environment with TA=25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t ≤10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using 300µs pulse width, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in curve provides a single pulse rating. Rev1 : Nov. 2010 2 FR-4 board with 2oz. Copper, in a still12 air environment with T A=25°C. The SOA THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. 2/4 www.freescale.net.cn AO3435 20V P-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 25 20 VDS=-5V -3.0V -4.5V -2.5V 20 15 -ID(A) -ID (A) 15 -2.0V 10 10 5 VGS=-1.5V 5 125°C 25°C 0 0 0 1 2 3 4 5 0 -VDS (Volts) Figure 1: On-Region Characteristics 1 1.5 2 2.5 3 -VGS(Volts) Figure 2: Transfer Characteristics 1.6 150 Normalized On-Resistance VGS=-1.5V 130 RDS(ON) (mΩ ) 0.5 VGS=-1.8V 110 90 VGS=-2.5V 70 VGS=-4.5V 50 VGS=2.5V 1.4 VGS=-4.5V ID=-3.5A 1.2 VGS=-1.5V ID=-0.5A 1 0.8 0 2 4 6 8 10 0 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 1E+02 180 160 1E+01 140 1E+00 120 1E-01 12 -IS (A) RDS(ON) (mΩ ) ID=-3.5A 100 125°C 80 25°C 1E-02 1E-03 60 1E-04 25°C 40 1E-05 0 2 4 6 8 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 3/4 125°C 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -VSD (Volts) Figure 6: Body-Diode Characteristics www.freescale.net.cn AO3435 20V P-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 5 1400 VDS=-10V ID=-3.5A 1200 1000 Capacitance (pF) -VGS (Volts) 4 3 2 800 Ciss 600 400 Coss 1 200 Crss 0 0 0 2 4 6 8 10 0 Qg (nC) Figure 7: Gate-Charge Characteristics 15 20 1000 TJ(Max)=150°C TA=25°C RDS(ON) limited 10µs 100 100µ Power (W) -ID (Amps) 10 -VDS (Volts) Figure 8: Capacitance Characteristics 100.00 10.00 5 1ms 1.00 10ms 10 0.1s 0.10 DC TJ(Max)=150°C TA=25°C 1 1s 0.01 0.1 1 10 100 0.1 0.00001 -VDS (Volts) Zθ JA Normalized Transient Thermal Resistance 1 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=90°C/W 0.1 10 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junctionto-Ambient (Note E) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 0.001 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 12 0.1 PD 0.01 Ton T Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note E) 4/4 www.freescale.net.cn