AO4722 30V N-Channel MOSFET General Description SRFET TM The AO4722 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS(ON),and low gate charge. This device is suitable for use as a low side FET in SMPS, load switching and general purpose applications. Features VDS (V) = 30V ID =11.6A (VGS = 10V) RDS(ON) < 14mΩ (VGS = 10V) RDS(ON) < 22mΩ (VGS = 4.5V) SOIC-8 D G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol 10 Sec Drain-Source Voltage VDS 30 Gate-Source Voltage ±20 Continuous Drain Current A VGS TA=25°C TA=70°C IDSM Pulsed Drain Current B Avalanche Current B Repetitive avalanche energy L=0.3mH TA=25°C Power Dissipation B TA=70°C 17 EAR PDSM Thermal Characteristics Parameter Symbol Maximum Junction-to-Ambient A Steady-State Maximum Junction-to-Lead C Steady-State 1/4 6.8 IAR TJ, TSTG t ≤ 10s 8.5 9.3 100 RθJA RθJL 43 A mJ 3.1 1.7 2.0 1.1 -55 to 150 Typ 32 60 17 Units V 11.6 IDM Junction and Storage Temperature Range Maximum Junction-to-Ambient A Steady State W °C Max 40 75 24 Units °C/W °C/W °C/W www.freescale.net.cn AO4722 30V N-Channel MOSFET Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250uA, VGS=0V IGSS VGS(th) Gate-Body leakage current VDS=0V, VGS= ±20V Gate Threshold Voltage On state drain current VDS=VGS ID=250µA 1.3 VGS=10V, VDS=5V 100 TJ=125°C VGS=10V, ID=11.6A Static Drain-Source On-Resistance TJ=125°C VGS=4.5V, ID=9.3A gFS Forward Transconductance VDS=5V, ID=11.6A VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode + Schottky Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance 10 mA 0.1 µA 1.65 2.5 V 11.5 14 17 21 17.5 22 A 28 0.43 903 VGS=0V, VDS=15V, f=1MHz Units V 0.1 Zero Gate Voltage Drain Current RDS(ON) Max 30 VDS=30V, VGS=0V IDSS ID(ON) Typ mΩ mΩ S 0.5 V 4 A 1100 pF 225 pF 91 pF 1.7 2.6 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 15.3 20 nC Qg(4.5V) Total Gate Charge 7.8 10 nC Qgs Gate Source Charge Qgd Gate Drain Charge VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=15V, ID=11.6A tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time Body Diode Reverse Recovery Time Qrr Body Diode Reverse Recovery Charge IF=11.6A, dI/dt=300A/µs VGS=10V, VDS=15V, RL=1.3Ω, RGEN=3Ω IF=11.6A, dI/dt=300A/µs 2.0 nC 3.9 nC 5.0 ns 9.2 ns 17.8 ns 4.4 ns 17 30.0 20 ns nC A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The value in any given application depends on the user's specific board design. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating. F. The current rating is based on the t≤ 10s junction to ambient thermal resistance rating. Rev2: Nov. 2010 2/4 www.freescale.net.cn AO4722 30V N-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 30 10V 80 VDS=5V 25 6V 20 60 ID(A) ID (A) 4.5V 40 15 4V 10 125° 20 25°C 5 VGS=3V 0 0 0 1 2 3 4 5 1 2 VDS (Volts) 25 5 Normalized On-Resistance 1.8 VGS=4.5V 20 RDS(ON) (mΩ ) 4 VGS(Volts) Figure 2: Transfer Characteristics DYNAMIC PARAMETERS Figure 1: On-Region Characteristics 15 10 VGS=10V 5 ID=11.6A VGS=10V 1.6 1.4 ID=9.3A 1.2 VGS=4.5V 1 0.8 0 5 10 15 20 25 30 0 30 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 60 90 120 150 180 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 45 1.0E+02 40 1.0E+01 ID=11.6A 35 125°C 1.0E+00 30 IS (A) RDS(ON) (mΩ ) 3 125°C 25 25°C 1.0E-01 1.0E-02 20 1.0E-03 15 1.0E-04 10 25°C 1.0E-05 5 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 3/4 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics www.freescale.net.cn AO4722 30V N-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1400 10 VDS=15V ID=11.6A 1200 Capacitance (pF) VGS (Volts) 8 6 4 Ciss 1000 800 600 400 Coss 2 200 0 0 0 5 10 15 20 0 Qg (nC) Figure 7: Gate-Charge Characteristics DYNAMIC PARAMETERS 1000.0 5 10 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 30 100 100.0 TJ(Max)=150°C TA=25°C 80 RDS(ON) limited 10.0 10µs 100µ 1m 10ms 0.1s 1.0 TJ(Max)=150°C TA=25°C 0.1 0.0 0.01 0.1 DC 1 VDS (Volts) Power (W) ID (Amps) Crss 1s 10s 10 60 40 20 0 0.0001 0.001 100 0.01 0.1 1 10 100 Pulse Width (s) Figure10: Single Pulse Power Rating Junction-toAmbient (Note E) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) Zθ JA Normalized Transient Thermal Resistance 10 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 0.01 Single Pulse 0.001 0.00001 0.0001 0.001 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=75°C/W 0.01 0.1 PD Ton 1 T 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note E) 4/4 www.freescale.net.cn