AON3402 20V N-Channel MOSFET General Description The AON3402 uses advanced trench technology to provide excellent RDS(ON) , low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating.This device is suitable for use as load switch and general purpose FET application. Product Summary VDS (V) = 20V ID = 12.6A (VGS = 4.5V) RDS(ON) < 13mΩ (VGS = 4.5V) RDS(ON) < 17mΩ (VGS = 2.5V) RDS(ON) < 26mΩ (VGS = 1.8V) D Top View 1 8 2 7 3 6 4 5 G S Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol Parameter VDS Drain-Source Voltage Gate-Source Voltage VGS TA=25°C Continuous Drain A Current B TA=25°C Power Dissipation A Junction and Storage Temperature Range Maximum Junction-to-Lead 1/4 C ±12 V ID 10 IDM 40 W 2 TJ, TSTG -55 to 150 Symbol t ≤ 10s Steady-State Steady-State A 3.1 PD TA=70°C Thermal Characteristics Parameter A Maximum Junction-to-Ambient A Maximum Junction-to-Ambient Units V 12.6 TA=70°C Pulsed Drain Current Maximum 20 RθJA RθJL Typ 30 65 20 °C Max 40 80 25 Units °C/W °C/W °C/W www.freescale.net.cn AON3402 20V N-Channel MOSFET Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Min ID=250µA, VGS=0V IGSS Gate-Body leakage current VDS=0V, VGS=±10V BVGSO Gate-Source Breakdown Voltage VDS=0V, IG=±250uA ±12 VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 0.5 ID(ON) On state drain current VGS=4.5V, VDS=5V 40 TJ=55°C 1 V A VGS=2.5V, ID=10.5A 14.3 17 mΩ VGS=1.8V, ID=8.5A 21.7 26 mΩ 1 V 4.8 A Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Input Capacitance Ciss Gate resistance 0.78 13 Forward Transconductance Rg V 18 VSD Reverse Transfer Capacitance µA 10.3 gFS Output Capacitance µA 14.4 TJ=125°C VDS=5V, ID=12A Crss 25 10 VGS=4.5V, ID=12A Coss Units V 10 Zero Gate Voltage Drain Current Static Drain-Source On-Resistance Max 20 VDS=16V, VGS=0V IDSS RDS(ON) Typ VGS=0V, VDS=10V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Total Gate Charge Qg VGS=4.5V, VDS=10V, ID=12A mΩ 37 0.73 S 1810 pF 232 pF 200 pF 1.6 Ω 17.9 nC 1.5 nC Qgs Gate Source Charge Qgd Gate Drain Charge 4.7 nC tD(on) Turn-On DelayTime 2.5 ns tr Turn-On Rise Time 7.2 ns VGS=10V, VDS=10V, RL=1.0Ω, RGEN=3Ω tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time Body Diode Reverse Recovery Time Qrr Body Diode Reverse Recovery Charge IF=12A, dI/dt=100A/µs IF=12A, dI/dt=100A/µs 49 ns 10.8 ns 20.2 ns nC 8 A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using 300 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in curve provides a single pulse rating. Rev2: Nov. 2010 2/4 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA www.freescale.net.cn AON3402 20V N-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 40 30 10 35 2.5V 4.5V VDS=5V 2V 25 30 20 ID(A) ID (A) 25 20 15 15 10 125°C 10 VGS=1.5V 5 5 25°C 0 0 0 1 2 3 4 5 0 0.5 1 1.5 2 VGS(Volts) Figure 2: Transfer Characteristics VDS (Volts) Fig 1: On-Region Characteristics 25 1.6 Normalized On-Resistance VGS=1.8V RDS(ON) (mΩ ) 20 VGS=2.5V 15 VGS=4.5V 10 5 VGS=4.5V ID=12A 1.4 VGS=2.5V ID=10.5A 1.2 VGS=1.8V ID=8.5A 1 0.8 0 5 10 15 20 0 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 25 75 100 125 150 175 1.0E+01 ID=12A 35 1.0E+00 125°C 30 1.0E-01 25 20 IS (A) RDS(ON) (mΩ ) 50 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 40 125°C 1.0E-02 25°C 15 1.0E-03 10 25°C 1.0E-04 5 1.0E-05 0 0 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 3/4 2.5 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics www.freescale.net.cn 1.2 AON3402 20V N-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 3000 5 VDS=10V ID=12A 2500 Capacitance (pF) VGS (Volts) 4 3 2 1 Ciss 2000 1500 1000 Coss 500 Crss 0 0 0 4 8 12 16 20 0 5 Qg (nC) Figure 7: Gate-Charge Characteristics 15 20 VDS (Volts) Figure 8: Capacitance Characteristics 100.0 40 TJ(Max)=150°C TA=25°C 100µs 1ms 10µs 30 Power (W) RDS(ON) limited ID (Amps) 10.0 10 10ms 1.0 1s 0.1s 10 TJ(Max)=150°C TA=25°C 10s DC 0 0.001 0.1 0.1 20 1 10 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) 100 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 0.01 Zθ JA Normalized Transient Thermal Resistance 10 1 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=80°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PD Single Pulse 0.01 0.001 0.00001 Ton 0.0001 0.001 0.01 0.1 1 T 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance 4/4 www.freescale.net.cn