AO4423 30V P-Channel MOSFET General Description The AO4423 uses advanced trench technology to provide excellent RDS(ON) , and ultra-low low gate charge with a 25V gate rating. This device is suitable for use as a load switch or in PWM applications. Features VDS (V) = -30V ID = -17A RDS(ON) < 6.2mΩ RDS(ON) < 7.2mΩ (VGS = -20V) (VGS = -20V) (VGS = -10V) D G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current AF TA=70°C TA=25°C TA=70°C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient AF Maximum Junction-to-Ambient A Maximum Junction-to-Lead 1/4 Units V VGS ±25 V ID -14 IDM -182 TA=25°C Pulsed Drain Current B Power Dissipation A Maximum -30 C -17 3.1 PD W 2 TJ, TSTG -55 to 150 Symbol t ≤ 10s Steady-State Steady-State A RθJA RθJL Typ 26 50 14 °C Max 40 75 24 Units °C/W °C/W °C/W www.freescale.net.cn AO4423 30V P-Channel MOSFET Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=-250µA, VGS=0V -30 -1 Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VGS(th) Gate Threshold Voltage VDS=VGS ID=-250µA -1.5 ID(ON) On state drain current VGS=-10V, VDS=-5V -182 TJ=55°C -5 ±1 µA ±10 µA TJ=125°C 6.2 9 mΩ 7.2 mΩ 9.5 mΩ -1 V -4.2 A 3033 pF IS=-1A,VGS=0V IS Maximum Body-Diode Continuous Current 48 S -0.71 DYNAMIC PARAMETERS Input Capacitance Ciss Gate resistance 5.1 7.4 5.9 Diode Forward Voltage Rg V A 7.5 VSD Output Capacitance -2.6 VGS=-10V, ID=-15A VDS=-5V, ID=-15A Reverse Transfer Capacitance -2.1 VGS=-6V, ID=-10A Forward Transconductance Crss µA VDS=0V, VGS=±25V gFS Coss Units VDS=0V, VGS=±20V VGS=-20V, ID=-15A Static Drain-Source On-Resistance Max V VDS=-30V, VGS=0V IDSS RDS(ON) Typ 2527 VGS=0V, VDS=-15V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Total Gate Charge Qg VGS=-10V, VDS=-15V, ID=-15A 583 2.1 pF 397 556 pF 4.3 6.4 Ω 47 57 nC Qgs Gate Source Charge 8 nC Qgd tD(on) Gate Drain Charge 14 nC Turn-On DelayTime 12 tr Turn-On Rise Time ns 8 ns tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time 54 ns 87 ns IF=-15A, dI/dt=100A/µs 26.1 Qrr Body Diode Reverse Recovery Charge IF=-15A, dI/dt=100A/µs 12.3 Body Diode Reverse Recovery Time VGS=-10V, VDS=-15V, RL=1.0Ω, RGEN=3Ω 32 ns nC A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The value in any given application depends on the user's specific board design. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating. F. The current rating is based on the t≤ 10s junction to ambient thermal resistance rating. Note *: This device is guaranteed RG 100% tested after date code 8V11 (Jan 1st 2008) Rev10: May. 2012 2/4 www.freescale.net.cn AO4423 30V P-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 50 50 -4.5V VDS=-5V -4V -10V 40 40 -6V 125°C 30 -ID(A) -ID (A) 30 20 25°C 20 -3.5V 10 10 VGS=-3V 0 0 0 1 2 3 4 5 2 3 3.5 4 4.5 5 1.7 Normalized On-Resistance RDS(ON) (mΩ Ω) 10 VGS=-6V 8 VGS=-10V 6 VGS=-20V 1.6 VGS=-20V ID = -15A 1.5 VGS=-10V ID = -15A 1.4 1.3 1.2 VGS=-6V ID = -10A 1.1 1.0 0.9 4 0 5 10 15 20 25 0 30 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage -15 1.0E+01 16 -12.8 ID=-15A 1.0E+00 14 1.0E-01 12 -IS (A) RDS(ON) (mΩ Ω) 2.5 -VGS(Volts) Figure 2: Transfer Characteristics -VDS (Volts) Fig 1: On-Region Characteristics 125°C 10 125°C 1.0E-02 1.0E-03 8 1.0E-04 6 25°C 1.0E-05 25°C 4 4 8 12 16 20 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 3/4 1.0E-06 0.0 0.2 0.4 0.6 0.8 1.0 -VSD (Volts) Figure 6: Body-Diode Characteristics www.freescale.net.cn AO4423 30V P-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 4000 10 3000 Capacitance (pF) -VGS (Volts) 3500 VDS=-15V ID=-15A 8 6 4 Ciss 2500 2000 1500 Coss 1000 2 500 0 10 20 30 40 -Qg (nC) Figure 7: Gate-Charge Characteristics RDS(ON) limited 30 TJ(Max)=150°C TA=25°C 10µs 1000 100µs 1.0 1ms 10ms 10s TJ(Max)=150°C TA=25°C Power (W) -ID (Amps) 20 10000 1s 100 10 0.1s DC 1 0.0 0.1 1 10 0.00001 100 -VDS (Volts) Figure 9: Maximum Forward Biased Safe 0.001 0.1 10 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) -15 10 Zθ JA Normalized Transient Thermal Resistance 10 -VDS (Volts) Figure 8: Capacitance Characteristics 10.0 0.1 0 50 1000.0 100.0 Crss 0 0 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=40°C/W -12.8 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 Ton T Single Pulse 0.01 0.00001 4/4 0.0001 0.001 0.01 Pulse Width 0.1(s) 1 10 Figure 11: Normalized Maximum Transient Thermal Impedance 100 1000 www.freescale.net.cn