SHENZHENFREESCALE AO4478

AO4478
30V N-Channel MOSFET
General Description
The AO4478 uses advanced trench technology to provide excellent RDS(ON), low gate charge. This
device is suitable for use as general puspose, PWM and a load switch applications.
Features
VDS (V) = 30V
ID = 9A (VGS = 10V)
RDS(ON) <19mΩ (VGS = 10V)
RDS(ON) <26mΩ (VGS = 4.5V)
D
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Symbol
Parameter
VDS
Drain-Source Voltage
Gate-Source Voltage
VGS
TA=25°C
Continuous Drain
Current
TA=70°C
Pulsed Drain Current
Avalanche Current C
Repetitive avalanche energy L=0.1mHC
TA=25°C
Junction and Storage Temperature Range
Maximum Junction-to-Lead
1/6
C
±25
V
ID
7.0
IDM
60
Iar
Ear
17
14
3.1
PD
TA=70°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient AD
Units
V
9.0
C
Power DissipationB
Maximum
30
mJ
W
2.0
-55 to 150
TJ, TSTG
Symbol
t ≤ 10s
Steady-State
Steady-State
A
RθJA
RθJL
Typ
31
59
16
°C
Max
40
75
24
Units
°C/W
°C/W
°C/W
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AO4478
30V N-Channel MOSFET
Electrical Characteristics (TJ=25°C unless otherwise noted)
Parameter
Symbol
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
Conditions
Min
ID=250µA, VGS=0V
Gate-Body leakage current
VDS=0V, VGS= ±25V
Gate Threshold Voltage
VDS=VGS ID=250µA
1
ID(ON)
On state drain current
VGS=10V, VDS=5V
60
VGS=10V, ID=9A
TJ=125°C
VGS=4.5V, ID=8A
Forward Transconductance
VDS=5V, ID=10A
VSD
Diode Forward Voltage
IS=1A,VGS=0V
IS
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
V
100
nA
1.6
2
V
16
19
25
30
21
26
mΩ
1
V
4
A
560
pF
A
VGS=0V, VDS=0V, f=1MHz
mΩ
24
0.70
466
VGS=0V, VDS=15V, f=1MHz
uA
5
VGS(th)
gFS
Units
1
TJ=55°C
Static Drain-Source On-Resistance
Max
30
VDS=30V, VGS=0V
IGSS
RDS(ON)
Typ
S
90
pF
61
pF
3.7
Ω
5.6
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
9.3
11
nC
Qg(4.5V) Total Gate Charge
4.3
5.2
nC
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
trr
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Qrr
VGS=10V, VDS=15V, ID=9A
1
nC
2.3
nC
5
ns
VGS=10V, VDS=15V, RL=1.65Ω,
RGEN=3Ω
8
ns
20
ns
5
ns
IF=9A, dI/dt=500A/µs
7.5
Body Diode Reverse Recovery Charge IF=9A, dI/dt=500A/µs
9.8
9
ns
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.
C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C.
D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with
2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse ratin g.
Rev1: Nov. 2010
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
2/6
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AO4478
30V N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
30
70
VDS= 5V
7V
60
25
10V
4.5V
20
40
ID(A)
ID (A)
50
4V
30
15
125°C
10
20
25°C
VGS= 3V
10
5
2.5V
0
0
0
1
2
3
4
5
0
1
2.0
35
1.8
RDS(ON) (mΩ )
Normalized On-Resistance
40
30
VGS=4.5V
25
20
15
2
3
4
5
VGS(Volts)
Figure 2: Transfer Characteristics(Note E)
VDS (Volts)
Figure 1: On-Region Characteristics(Note E)
VGS=10V
10
5
1.6
VGS=4.5V
ID=8A
1.4
1.2
VGS=10V
ID=9A
1.0
0.8
0.6
0
5
10
15
20
25
0
ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage(Note E)
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature(Note E)
1E+01
70
60
1E+00
50
1E-01
IS (A)
RDS(ON) (mΩ )
ID=9A
40
125°C
1E-02
25°C
125°C
30
1E-03
25°C
20
1E-04
10
2
3/6
3
4
5
6
7
8
9
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source
Voltage(Note E)
10
1E-05
0.0
0.2
0.4
0.6
0.8
1.0
VSD (Volts)
Figure 6: Body-Diode Characteristics(Note E)
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AO4478
30V N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
800
10
VGS (Volts)
Capacitance (pF)
VDS=15V
ID=9A
8
6
4
600
Ciss
400
Coss
200
2
0
Crss
0
0
2
4
6
8
10
0
Qg (nC)
Figure 7: Gate-Charge Characteristics
20
25
30
RDS(ON) limited
TA=25°C
100
10µs
TA=25°C
ID (Amps)
ID(A), Peak Avalanche Current
15
1000
50
40
30
10
VDS (Volts)
Figure 8: Capacitance Characteristics
70
60
5
TA=150°C
TA=150°C
TA=100°C
10
100µs
1
1ms
10ms
100ms
TA=125°C
20
TJ(Max)=150°C
TA=25°C
0.1
10s
DC
10
0.01
0
0.000001
0.1
0.00001
0.0001
0.001
Time in avalanche, tA (s)
Figure 9: Single Pulse Avalanche capability
(Note C)
1
10
100
VDS (Volts)
Figure 10: Maximum Forward Biased
Safe Operating Area (Note F)
1000
Power (W)
TJ(Max)=150°C
TA=25°C
100
10
1
0.00001
0.001
0.1
10
1000
Pulse Width (s)
Figure 11: Single Pulse Power Rating Junction-to-Ambient (Note F)
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AO4478
30V N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
Zθ JA Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=75°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
PD
0.01
Ton
T
Single Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 12: Normalized Maximum Transient Thermal Impedance (Note F)
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AO4478
30V N-Channel MOSFET
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
Vgs
90%
+ Vdd
DUT
VDC
-
Rg
10%
Vgs
Vgs
t d(on)
tr
t d(off)
t on
tf
t off
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
2
EAR= 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vgs
Vds Isd
Vgs
Ig
6/6
L
Isd
+ Vdd
t rr
dI/dt
I RM
Vdd
VDC
-
IF
Vds
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