AO4828 60V Dual N-channel MOSFET General Description The AO4828 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. Features VDS (V) = 60V ID = 4.5A (VGS = 10V) RDS(ON) < 56mΩ (VGS = 10V) RDS(ON) < 77mΩ (VGS = 4.5V) SOIC-8 D 1 D 2 Top View D2 D2 D1 D1 S2 G2 S1 G1 G1 G2 S1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TA=25°C Continuous Drain AF Current B TA=25°C Avalanche Current B Repetitive avalanche energy 0.1mH B Junction and Storage Temperature Range Thermal Characteristics Parameter A Maximum Junction-to-Ambient A Maximum Junction-to-Ambient Maximum Junction-to-Lead 1/4 C Units V ±20 V ID 3.6 IDM 20 A 2 PD TA=70°C Power Dissipation Maximum 60 4.5 TA=70°C Pulsed Drain Current S2 W 1.28 IAR, IAS 19 A EAR, EAS 18 mJ TJ, TSTG -55 to 150 °C Symbol t ≤ 10s Steady-State Steady-State RθJA RθJL Typ 48 74 35 Max 62.5 110 60 Units °C/W °C/W °C/W www.freescale.net.cn AO4828 60V Dual N-channel MOSFET Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250µA, VGS=0V Units V 1 Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS= ±20V VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 1 ID(ON) On state drain current VGS=10V, VDS=5V 20 TJ=55°C µA 5 VGS=10V, ID=4.5A Static Drain-Source On-Resistance Max 60 VDS=60V, VGS=0V IDSS RDS(ON) Typ TJ=125°C VGS=4.5V, ID=3A 100 nA 2.1 3 V 46 56 80 100 64 77 mΩ 1 V A mΩ gFS Forward Transconductance VDS=5V, ID=4.5A VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current 3 A ISM Pulsed Body Diode Current B 20 A 540 pF 11 DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance 450 VGS=0V, VDS=30V, f=1MHz Qgs Gate Source Charge Qgd tD(on) tr Turn-On Rise Time 60 pF 25 VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge S 0.74 VGS=10V, VDS=30V, ID=4.5A 1.3 pF 1.65 2 Ω 8.5 10.5 nC 4.3 5.5 nC 1.6 nC Gate Drain Charge 2.2 nC Turn-On DelayTime 4.7 ns 2.3 ns 15.7 ns 1.9 ns VGS=10V, VDS=30V, RL=6.7Ω, RGEN=3Ω tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time Qrr Body Diode Reverse Recovery Charge IF=4.5A, dI/dt=100A/µs Body Diode Reverse Recovery Time IF=4.5A, dI/dt=100A/µs 27.5 35 32 ns nC A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The value in any given application depends on the user's specific board design. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating. F. The current rating is based on the t≤ 10s junction to ambient thermal resistance rating. Rev8: May 2010 2/4 www.freescale.net.cn AO4828 60V Dual N-channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 20 15 10.0 V 5.0V VDS=5V 15 125°C ID(A) ID (A) 10 4.5V 10 4.0V 5 5 25°C VGS=3.5V 0 0 1 2 3 4 0 5 2 2.5 VDS (Volts) Fig 1: On-Region Characteristics Normalized On-Resistance 80 RDS(ON) (mΩ ) 4 4.5 5 2 90 VGS=4.5V 70 60 50 VGS=10V 40 30 20 VGS=10V 1.8 ID=4.5A 1.6 VGS=4.5V ID=3.0A 1.4 1.2 1 0.8 0 5 10 15 20 0 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 160 1.0E+01 ID=4.5A 140 1.0E+00 125°C 1.0E-01 120 IS (A) RDS(ON) (mΩ ) 3.5 VGS(Volts) Figure 2: Transfer Characteristics 100 125°C 100 1.0E-02 25°C 1.0E-03 80 25°C 60 1.0E-04 40 1.0E-05 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 3/4 3 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics www.freescale.net.cn AO4828 60V Dual N-channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 800 10 VDS=30V ID= 4.5A Capacitance (pF) VGS (Volts) 8 6 4 2 600 Ciss 400 Coss 200 Crss 0 0 0 1 2 3 4 5 6 7 8 9 10 0 10 Qg (nC) Figure 7: Gate-Charge Characteristics 50 60 1ms 1s 1.0 10s TJ(Max)=150°C TA=25°C 30 Power (W) ID (Amps) 10.0 10ms TJ(Max)=150°C TA=25°C 10µs 100µs 0.1s 20 10 DC 0 0.001 0.1 1 10 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) 100 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) Zθ JA Normalized Transient Thermal Resistance 40 40 RDS(ON) limited 10 30 VDS (Volts) Figure 8: Capacitance Characteristics 100.0 0.1 20 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=62.5°C/W 0.01 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 Ton Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 T 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance 4/4 www.freescale.net.cn